摘要:
A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and the probe tip.
摘要:
A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
摘要:
A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
摘要:
A probe measurement system having low, stable contact resistance for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
摘要:
A method and test structures are disclosed for characterizing interconnects of an integrated circuit. The method provides a set of test structures and determines a unit impedance property of each test structure, desirably using S-parameter measurements. A reference impedance data set is then formulated that characterizes the impedance of an integrated circuit manufacturing technology and that can be used to characterize the impedance of interconnects of the chip made by the technology. Each test structure desirably comprises a ground grid and a signal line, and is characterized by values of a set of predetermined attributes such as layer location of the respective ground grid, grid density, layer association, width and length of the respective signal line.
摘要:
A shielded probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies. The probe may include a probe tip that extends through a dielectric substrate that supports on a first surface a signal path to test instrumentation and on a second surface a ground path that shields both the signal path and the probe tip.
摘要:
A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
摘要:
A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal oath and the probe tip.