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公开(公告)号:US10078110B2
公开(公告)日:2018-09-18
申请号:US15295244
申请日:2016-10-17
发明人: Won-Joo Yun , Sukyong Kang , Hye-Seung Yu , Hyunui Lee
IPC分类号: G01R31/02 , G01R31/26 , G01R31/28 , H01L21/66 , H01L25/065 , H03K17/687 , G11C29/00 , G11C29/02 , G11C29/50 , G11C5/02
CPC分类号: G01R31/2853 , G01R31/025 , G01R31/26 , G01R31/2884 , G11C5/025 , G11C29/006 , G11C29/025 , G11C29/50008 , H01L22/14 , H01L22/34 , H01L25/0657 , H01L2224/16227 , H01L2225/06513 , H01L2225/06596 , H01L2924/15311 , H03K17/6872
摘要: Disclosed are a method and a device for detecting a short circuit between adjacent micro-bumps. The method includes setting outputs of a pull-up driver and a pull-down driver of a data output circuit connected with a micro-bump to be suitable for a test type and determining whether a short circuit is generated.
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公开(公告)号:US09989586B2
公开(公告)日:2018-06-05
申请号:US14682122
申请日:2015-04-09
发明人: Liang Liu , Bo-Yu Pu , Yi Zhang , Hong-Jian Gan , Jian-Ping Ying
IPC分类号: G01R31/3187 , G01R31/28 , H02M7/487 , G01R31/02 , H02M1/32
CPC分类号: G01R31/2884 , G01R31/026 , G01R31/2853 , H02M1/32 , H02M7/487
摘要: A converter circuit is provided. The converter circuit includes a capacitor module, bridge arms, a voltage measuring module and an open-circuit detection module. Each bridge arm is connected to the capacitor module in parallel and includes an upper arm and a lower bridge arm connected at a middle point. The voltage measuring module measures voltage differences between each two bridge arms. The open-circuit detection module transmits test impulse signals to the bridge arms to activate at least one upper-conducted bridge arm and at least one lower-conducted bridge arm. The open-circuit detection module retrieves the voltage differences of each pair of the upper-conducted and lower-conducted bridge arms to make comparison with a reference value to determine an operation state thereof, and makes comparison of the operation state determined according to the different groups of test impulse signals to determine whether the upper and the lower bridge arms are actually open circuit.
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公开(公告)号:US09978712B2
公开(公告)日:2018-05-22
申请号:US15164608
申请日:2016-05-25
发明人: Danyang Zhu , Zhuang Ma , Xinyu Yin , Michael Dean Shilhanek , Steven Bolen , Albert Eardley , Abha Singh Kasper
CPC分类号: H01L24/85 , G01R31/041 , G01R31/2853 , H01L22/34 , H01L2224/05554 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/859 , H01L2924/00014 , H01L2924/14252 , H01L2224/45099 , H01L2224/05599
摘要: A multichip module (MCM) device include a first die including functional circuitry bonded by a plurality of inter-die bond wires (bond wires) to a second die having functional circuitry. A first channel (Channel A) and second channel (Channel B) each have separate top and bottom signal paths (signal paths) including one of the bond wires. A failure of any of the signal paths does not affect functionality of the device. The first die includes input pins including a first input pin (P1), a second input pin (P2), and coupling circuitry including cross-channel test circuitry positioned between the input pins and the functional circuitry. The coupling circuitry provides for Channel A and Channel B a first configuration for normal mode operation and a second configuration for test mode operation for single bond wire testing for checking continuity of any of the bond wires.
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公开(公告)号:US20180096736A1
公开(公告)日:2018-04-05
申请号:US15282030
申请日:2016-09-30
CPC分类号: G01R31/2884 , G01R31/2853 , G06F9/4403 , G06F11/2736 , G06F2217/14 , G11C29/022 , G11C29/12005 , G11C29/1201 , G11C29/12015 , G11C29/24 , G11C29/36 , G11C29/54 , G11C29/56004 , G11C2029/0401 , G11C2029/0403 , G11C2029/3602
摘要: A technical solution for improving test times and costs associated with IC production includes a central test engine (CTE) functional test block integrated onto an IC. The CTE functions as a hardware abstraction layer (HAL), and provides testing capabilities by transferring a large test data file to a device under test and performing a closed-loop monitoring of receipt of the expected test data results. The CTE also reduces the number of external interfaces and interface controllers used during testing. The reduction in external interfaces reduces the size of the IC, which enables smaller and more efficient IC manufacturing, and may be used to improve small form-factor high-volume manufacturing (HVM). This reduction in IO pins also enables significant reduction in IO resources (e.g., IO drivers) within the IC, and reduces or eliminates IO test hardware dependencies.
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公开(公告)号:US20180047644A1
公开(公告)日:2018-02-15
申请号:US15722459
申请日:2017-10-02
发明人: Taryn J. Davis , Jonathan R. Fry , Tuhin Sinha
IPC分类号: H01L21/66 , H01L21/54 , H01L21/48 , H01L23/522 , G01R31/28
CPC分类号: H01L22/14 , G01R31/2853 , G01R31/2896 , H01L21/4853 , H01L21/54 , H01L21/563 , H01L22/34 , H01L23/5222 , H01L23/5223 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2224/73253 , H01L2924/00
摘要: Flip-chip package reliability monitoring and systems of monitoring using capacitive sensors are disclosed. The monitoring is conducted in situ and in real-time without the need for destructive testing of the packages. The capacitive sensors can be used for flip-chip package reliability monitoring.
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公开(公告)号:US20180011138A1
公开(公告)日:2018-01-11
申请号:US15713111
申请日:2017-09-22
发明人: HOI HIN LOO , SOH YING SEAH
IPC分类号: G01R31/28
CPC分类号: G01R31/2851 , G01R31/2853 , G01R31/287 , G01R31/2894
摘要: A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bin 1 die) for being a good die for all probe tests, or a second bin (Bin 2 die) for failing at least one of continuity tests and parametric tests. The Bin 2 die are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bin 2 die to generate a continuity failure and thus generate kill die.
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公开(公告)号:US09863987B2
公开(公告)日:2018-01-09
申请号:US15335733
申请日:2016-10-27
发明人: Riccardo Massa , Vito Caggiano , Gianluca Ratti
CPC分类号: G01R23/20 , G01N3/34 , G01R31/2853
摘要: A passive intermodulation (“PIM”) distortion test apparatus includes a housing, hammering elements disposed within the housing, each hammering element including a moveable striking member, a strike plate positioned above the hammering elements, where a bottom surface of the strike plate is positioned at a distance above the hammering elements such that the moveable striking members of the hammering elements impact the strike plate when moved into their activated positions, and a retaining member that is configured to hold a device under test on a top surface of the strike plate while a PIM distortion test is performed on the device under test.
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公开(公告)号:US20170352431A1
公开(公告)日:2017-12-07
申请号:US15686754
申请日:2017-08-25
发明人: Jeffrey A. Kessenich , Joemar Sinipete , Chiming Chu , Jason L. Nevill , Kenneth W. Marr , Renato C. Padilla
IPC分类号: G11C16/34 , G11C7/02 , G11C8/08 , G11C29/50 , G11C29/02 , G01R31/02 , G11C16/26 , G11C29/04 , G11C7/00 , G11C16/10 , G11C29/12 , G11C16/00
CPC分类号: G11C16/3459 , G01R31/02 , G01R31/025 , G01R31/2853 , G01R31/2856 , G01R31/3008 , G11C7/00 , G11C7/02 , G11C8/08 , G11C16/00 , G11C16/10 , G11C16/26 , G11C16/349 , G11C29/02 , G11C29/025 , G11C29/04 , G11C29/50008 , G11C2029/1202 , G11C2029/1204 , G11C2029/5006
摘要: Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a particular voltage to an unselected access line of a program operation, sensing a current of a selected access line of the program operation while applying the particular voltage to the unselected access line, indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current, and proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.
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公开(公告)号:US09791500B2
公开(公告)日:2017-10-17
申请号:US14742906
申请日:2015-06-18
CPC分类号: G01R31/2853 , G01R31/026 , G01R31/2856 , G01R31/2858 , G06F11/00 , H01L22/34
摘要: A test structure and method to detect open circuits due to electromigration or burn-out in test wires and inter-level vias. Electromigration occurs when current flows through circuit wires leading to a circuit interruption within the wire. The test structure is a passive test wire arranged in one of several configurations within the circuit of a computer chip. The dimensions and resistances of test wires can vary according to the test structure configuration. Each test wire is measured for an electrical discontinuity after the computer chip is powered-on. If a wiring interruption is detected, it is concluded that the chip had been powered-on before.
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公开(公告)号:US09772372B2
公开(公告)日:2017-09-26
申请号:US14168648
申请日:2014-01-30
发明人: Hoi Hin Loo , Soh Ying Seah
IPC分类号: G01R31/28
CPC分类号: G01R31/2851 , G01R31/2853 , G01R31/287 , G01R31/2894
摘要: A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bin 1 die) for being a good die for all probe tests, or a second bin (Bin 2 die) for failing at least one of continuity tests and parametric tests. The Bin 2 die are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bin 2 die to generate a continuity failure and thus generate kill die.
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