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公开(公告)号:US20200098657A1
公开(公告)日:2020-03-26
申请号:US16143001
申请日:2018-09-26
申请人: Arnab SEN GUPTA , Matthew METZ , Benjamin CHU-KUNG , Abhishek SHARMA , Van H. LE , Miriam R. RESHOTKO , Christopher J. JEZEWSKI , Ryan ARCH , Ande KITAMURA , Jack T. KAVALIEROS , Seung Hoon SUNG , Lawrence WONG , Tahir GHANI
发明人: Arnab SEN GUPTA , Matthew METZ , Benjamin CHU-KUNG , Abhishek SHARMA , Van H. LE , Miriam R. RESHOTKO , Christopher J. JEZEWSKI , Ryan ARCH , Ande KITAMURA , Jack T. KAVALIEROS , Seung Hoon SUNG , Lawrence WONG , Tahir GHANI
IPC分类号: H01L23/31 , H01L29/786 , H01L29/45 , H01L29/66 , H01L29/40
摘要: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.