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公开(公告)号:US20200098657A1
公开(公告)日:2020-03-26
申请号:US16143001
申请日:2018-09-26
申请人: Arnab SEN GUPTA , Matthew METZ , Benjamin CHU-KUNG , Abhishek SHARMA , Van H. LE , Miriam R. RESHOTKO , Christopher J. JEZEWSKI , Ryan ARCH , Ande KITAMURA , Jack T. KAVALIEROS , Seung Hoon SUNG , Lawrence WONG , Tahir GHANI
发明人: Arnab SEN GUPTA , Matthew METZ , Benjamin CHU-KUNG , Abhishek SHARMA , Van H. LE , Miriam R. RESHOTKO , Christopher J. JEZEWSKI , Ryan ARCH , Ande KITAMURA , Jack T. KAVALIEROS , Seung Hoon SUNG , Lawrence WONG , Tahir GHANI
IPC分类号: H01L23/31 , H01L29/786 , H01L29/45 , H01L29/66 , H01L29/40
摘要: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.
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公开(公告)号:US20200098875A1
公开(公告)日:2020-03-26
申请号:US16142036
申请日:2018-09-26
申请人: Seung Hoon SUNG , Justin WEBER , Matthew METZ , Arnab SEN GUPTA , Abhishek SHARMA , Benjamin CHU-KUNG , Gilbert DEWEY , Charles KUO , Nazila HARATIPOUR , Shriram SHIVARAMAN , Van H. LE , Tahir GHANI , Jack T. KAVALIEROS , Sean MA
发明人: Seung Hoon SUNG , Justin WEBER , Matthew METZ , Arnab SEN GUPTA , Abhishek SHARMA , Benjamin CHU-KUNG , Gilbert DEWEY , Charles KUO , Nazila HARATIPOUR , Shriram SHIVARAMAN , Van H. LE , Tahir GHANI , Jack T. KAVALIEROS , Sean MA
IPC分类号: H01L29/417 , H01L29/08 , H01L29/205 , H01L29/49 , H01L29/45 , H01L29/786 , H01L29/66 , H01L21/02 , H01L27/108 , H01L29/267
摘要: Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a contact electrode having a conductive material above the substrate, an epitaxial layer above the contact electrode, and a channel layer including a channel material above the epitaxial layer and above the contact electrode. The channel layer is in contact at least partially with the epitaxial layer. A conduction band of the channel material and a conduction band of a material of the epitaxial layer are substantially aligned with an energy level of the conductive material of the contact electrode. A bandgap of the material of the epitaxial layer is smaller than a bandgap of the channel material. Furthermore, a gate electrode is above the channel layer, and separated from the channel layer by a gate dielectric layer. Other embodiments may be described and/or claimed.
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公开(公告)号:US20200098931A1
公开(公告)日:2020-03-26
申请号:US16142075
申请日:2018-09-26
申请人: Abhishek SHARMA , Nazila HARATIPOUR , Seung Hoon SUNG , Benjamin CHU-KUNG , Gilbert DEWEY , Shriram SHIVARAMAN , Van H. LE , Jack T. KAVALIEROS , Tahir GHANI , Matthew V. METZ , Arnab SEN GUPTA
发明人: Abhishek SHARMA , Nazila HARATIPOUR , Seung Hoon SUNG , Benjamin CHU-KUNG , Gilbert DEWEY , Shriram SHIVARAMAN , Van H. LE , Jack T. KAVALIEROS , Tahir GHANI , Matthew V. METZ , Arnab SEN GUPTA
IPC分类号: H01L29/786 , H01L29/49 , H01L29/66 , H01L27/24 , H01L27/108
摘要: Embodiments herein describe techniques for a thin-film transistor (TFT), which may include a substrate oriented in a horizontal direction and a transistor above the substrate. The transistor includes a gate electrode above the substrate, a gate dielectric layer around the gate electrode, and a channel layer around the gate dielectric layer, all oriented in a vertical direction substantially orthogonal to the horizontal direction. Furthermore, a first metal electrode located in a first metal layer is coupled to a first portion of the channel layer by a first short via, and a second metal electrode located in a second metal layer is coupled to a second portion of the channel layer by a second short via. Other embodiments may be described and/or claimed.
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