公开(公告)号：US5888836A

公开(公告)日：1999-03-30

申请号：US990328

申请日：1997-12-15

申请人： Emilio Ghio ,  Simone Alba ,  Andrea Colognese

发明人： Emilio Ghio ,  Simone Alba ,  Andrea Colognese

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/268

CPC分类号： H01L29/66825 ,  H01L21/28176

摘要： The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes. The process comprises an annealing treatment at relatively low temperature (430.degree. C.) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.

摘要翻译： 所描述的方法需要形成与已知方法制造的那些结构完全相似的浮栅非易失性存储单元。 该方法包括在较低温度（430℃）下进行退火处理，以修复等离子体处理造成的损坏。 为了获得接近理论值的电池的阈值电压值，特别是对于具有特别延长的互连的电池，在退火处理之前对电池进行紫外线辐射，以便中和存在于浮栅电极中的任何电荷 细胞。

公开(公告)号：US6051443A

公开(公告)日：2000-04-18

申请号：US990617

申请日：1997-12-15

申请人： Emilio Ghio ,  Simone Alba ,  Andrea Colognese ,  Fran.cedilla.ois Maugain ,  Giovanni Rivera

发明人： Emilio Ghio ,  Simone Alba ,  Andrea Colognese ,  Fran.cedilla.ois Maugain ,  Giovanni Rivera

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method for assessing alterations in the dielectric properties of insulating layers on a wafer of semiconductor material induced by plasma treatments. The method includes forming cells of EEPROM type on a wafer with source, drain and control gate surface terminals (pads), subjecting the cells to UV radiation so as to erase them thereby fixing a reference threshold voltage, applying programming voltages of preset value to at least one of the cells and measuring the corresponding threshold voltages, and subjecting this cell to UV radiation so as to restore its threshold to the reference value. The wafer is then subjected to the plasma treatment to be assessed, and the threshold voltages of the cells are measured and compared with the reference threshold voltage so as to derive from the comparison information on the alterations induced on the dielectrics formed on the wafer and on the distribution of the plasma potential.

摘要翻译： 用于评估由等离子体处理引起的半导体材料的晶片上的绝缘层的介电性质的变化的方法。 该方法包括在晶片上形成具有源极，漏极和控制栅极表面端子（焊盘）的EEPROM型电池，使电池经受紫外辐射，从而擦除它们，从而固定参考阈值电压，将预设值的编程电压施加到 至少一个电池并测量相应的阈值电压，并对该电池进行紫外辐射，以将其阈值恢复到参考值。 然后对晶片进行等离子体处理以进行评估，并测量电池的阈值电压并将其与参考阈值电压进行比较，以便从关于在晶片上形成的电介质上引起的变化的比较信息导出 等离子体电位的分布。