Cooking utensils for steaming food
    1.
    发明申请
    Cooking utensils for steaming food 审中-公开
    炊具用于蒸食

    公开(公告)号:US20050183585A1

    公开(公告)日:2005-08-25

    申请号:US10989250

    申请日:2004-11-17

    申请人: Andres Knorr

    发明人: Andres Knorr

    IPC分类号: A47J27/04 A47J36/20 A47J37/12

    CPC分类号: A47J36/20 A47J27/04

    摘要: The invention describes a set of cooking utensils for steaming food, essentially a casserole or main part and another casserole or secondary part which is inserted into the main part, with the novelty that the secondary part remains suspended on some notches provided on the inner walls or sides of the main part. With this system of engagement, the secondary part can have a smaller size than in traditional designs, thereby reducing the cost and the complexity of its manufacturing and simplifying its cleaning and storage.

    摘要翻译: 本发明描述了一组用于蒸煮食物的烹饪用具,基本上是砂锅或主要部分,以及插入主要部分中的另一个砂锅或次要部件,其新颖性是次要部分保持悬挂在设置在内壁上的一些凹口上 侧面的主要部分。 通过这种接合系统,辅助部件可以具有比传统设计更小的尺寸,从而降低其制造成本和复杂性,并简化其清洁和存储。

    Methodology for in-situ doping of aluminum coatings
    2.
    发明授权
    Methodology for in-situ doping of aluminum coatings 有权
    铝涂层原位掺杂方法

    公开(公告)号:US06534133B1

    公开(公告)日:2003-03-18

    申请号:US09607900

    申请日:2000-06-30

    IPC分类号: C23C1620

    摘要: A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.

    摘要翻译: 用于在基底上原位制备共形铜掺杂的铝涂层的化学气相沉积方法包括以下步骤:产生在反应器中引导到基底的第一反应物蒸气的第一流,第一反应物蒸气包括铜源 前体 将基底加热到足以分解第一反应物蒸气并形成超薄铜籽晶层的温度; 在所述反应器中产生指向所述衬底的第二反应物蒸气的第二流,所述第二反应物蒸汽包括铝源前体; 并将衬底加热至高于185℃的温度,以分解第二反应物蒸气并形成掺铜的铝膜。