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    Methodology for in-situ doping of aluminum coatings
    1.
    发明授权
    Methodology for in-situ doping of aluminum coatings 有权
    铝涂层原位掺杂方法

    公开(公告)号：US06534133B1

    公开(公告)日：2003-03-18

    申请号：US09607900

    申请日：2000-06-30

    申请人： Alain E. Kaloyeros ,  Andres Knorr ,  Jonathan Faltermeier

    发明人： Alain E. Kaloyeros ,  Andres Knorr ,  Jonathan Faltermeier

    IPC分类号： C23C1620

    CPC分类号： H01L21/32051 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/4412 ,  C23C16/5096 ,  H01L21/76877

    摘要： A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.

    摘要翻译： 用于在基底上原位制备共形铜掺杂的铝涂层的化学气相沉积方法包括以下步骤：产生在反应器中引导到基底的第一反应物蒸气的第一流，第一反应物蒸气包括铜源 前体 将基底加热到足以分解第一反应物蒸气并形成超薄铜籽晶层的温度; 在所述反应器中产生指向所述衬底的第二反应物蒸气的第二流，所述第二反应物蒸汽包括铝源前体; 并将衬底加热至高于185℃的温度，以分解第二反应物蒸气并形成掺铜的铝膜。

    Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation
    2.
    发明授权
    Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation 失效
    合适的纯和掺杂铝涂层及其制备方法和装置

    公开(公告)号：US6077571A

    公开(公告)日：2000-06-20

    申请号：US574943

    申请日：1995-12-19

    申请人： Alain E. Kaloyeros ,  Jonathan Faltermeier

    发明人： Alain E. Kaloyeros ,  Jonathan Faltermeier

    IPC分类号： C23C14/16 ,  C23C16/18 ,  C23C16/20 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23C16/511 ,  H01L21/285 ,  C23G16/20

    CPC分类号： C23C14/16 ,  C23C16/18 ,  C23C16/20 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  C23C16/511 ,  H01L21/28556

    摘要： The present invention relates to a process and apparatus for the formation of conformal pure aluminum and doped aluminum coatings on a patterned substrate. It is directed to the use of low temperature thermal and plasma-promoted chemical vapor deposition techniques with biased substrate to provide conformal layers and bilayers comprised of pure Al and/or doped Al (e.g., Al with 0.5 at % copper) on semiconductor device substrates with patterned holes, vias, and trenches with aggressive aspect ratios (hole depth/hole width ratios). The use of the plasma-promoted CVD (PPCVD) process, which employs low plasma power densities, allows the growth of aluminum films with the smooth surface morphology and small grain size necessary for ULSI applications, while substrate bias provides superior coverage and complete aluminum fill of features intrinsic in microelectronic device manufacture. Aluminum doping is achieved by in-situ deposition by PPCVD of sequential bilayers of Al and Cu followed by in-situ annealing, or in-situ simultaneous PPCVD deposition of copper-doped aluminum.

    摘要翻译： 本发明涉及一种用于在图案化衬底上形成共形纯铝和掺杂铝涂层的方法和装置。 它旨在使用具有偏置衬底的低温热和等离子体促进的化学气相沉积技术来提供由半导体器件衬底上的纯Al和/或掺杂Al（例如，具有0.5at％的铜）的Al构成的保形层和双层 具有图案化的孔，通孔和具有侵蚀性纵横比（孔深度/孔宽比）的沟槽。 使用采用低等离子体功率密度的等离子体促进CVD（PPCVD）工艺允许具有ULSI应用所需的光滑表面形态和小晶粒尺寸的铝膜的生长，而衬底偏压提供优异的覆盖和完全的铝填充 的微电子器件制造中固有的特征。 铝掺杂通过PPCVD原位沉积通过Al和Cu的顺序双层进行原位沉积，然后进行原位退火或原位同时PPCVD沉积铜掺杂的铝来实现。

    Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same
    3.
    发明授权
    Tantalum and tantalum-based films formed using fluorine-containing source precursors and methods of making the same 失效
    使用含氟源前体形成的钽和钽基膜及其制备方法

    公开(公告)号：US6139922A

    公开(公告)日：2000-10-31

    申请号：US313618

    申请日：1999-05-18

    申请人： Alain E. Kaloyeros ,  Barry C. Arkles

    发明人： Alain E. Kaloyeros ,  Barry C. Arkles

    IPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/34 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  C23C16/08 ,  H01L21/44

    CPC分类号： H01L21/76846 ,  C23C16/14 ,  C23C16/18 ,  C23C16/34 ,  C23C16/42 ,  H01L21/76843 ,  H01L21/76855

    摘要： A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I)wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.

    摘要翻译： 将包含钽的薄膜化学气相沉积到基底上的方法包括将沉积室引入沉积室：（i）基底; （ii）蒸气状态的源前体; 和（iii）反应物气体，并且将该室内的衬底的温度保持在约70℃至约675℃，持续足以在衬底上沉积包含钽的膜的时间。 源前体具有式（I）：其中X选自溴，碘，氯及其组合的Ta（F5-q-p）（Xq-p）（Rp）（I） q是0〜4的整数; p是0至4的整数; 并且R选自氢和低级烷基。

    Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
    4.
    发明授权
    Method for the chemical vapor deposition of copper-based films and copper source precursors for the same 有权
    铜基膜和铜源前体的化学气相沉积方法

    公开(公告)号：US6066196A

    公开(公告)日：2000-05-23

    申请号：US157901

    申请日：1998-09-21

    申请人： Alain E. Kaloyeros ,  Barry C. Arkles

    发明人： Alain E. Kaloyeros ,  Barry C. Arkles

    IPC分类号： C07C49/92 ,  C07F1/08 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  C09D5/00

    CPC分类号： C23C16/045 ,  C23C16/18 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002

    摘要： A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

    摘要翻译： 提供了用于铜基膜的化学气相沉积中用于沉积铜基膜和铜源前体的方法。 前体包括至少一种配体稳定的铜（I）β-二酮前体的混合物; 和至少一种β-二酮铜（II）前体。 该方法包括引入沉积室：（i）衬底; （ii）蒸气状态的铜源前体，包括至少一种配体稳定的铜（I）β-二酮前体的混合物; 和至少一种β-二酮铜（II）前体; 和（iii）不同于所述铜源前体的至少一种输送气体。 将反应基板温度保持在约50℃至约500℃，持续足以在所述基材上沉积铜基膜的时间。

    Tantalum and tantalum-based films and methods of making the same
    7.
    发明授权
    Tantalum and tantalum-based films and methods of making the same 失效
    钽和钽基薄膜及其制造方法

    公开(公告)号：US5919531A

    公开(公告)日：1999-07-06

    申请号：US824581

    申请日：1997-03-26

    申请人： Barry C. Arkles ,  Alain E. Kaloyeros

    发明人： Barry C. Arkles ,  Alain E. Kaloyeros

    IPC分类号： C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  H01L21/768

    CPC分类号： H01L21/76843 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42

    摘要： A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) at least one carrier gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(I.sub.5-m-n-p)(Br.sub.m- p)(Cl.sub.n- p)(R.sub.p) (I)wherein m is an integer from 0 to 5, n is an integer from 0 to 4, p is an integer from 0 to 4, and R is selected from the group consisting of hydrogen, and lower alkyl.

    摘要翻译： 将包含钽的薄膜化学气相沉积到基底上的方法包括将沉积室引入沉积室：（i）基底; （ii）蒸气状态的源前体; 和（iii）至少一种载气，并且将该室内的基材的温度保持在约70℃至约675℃，持续一段足以在基底上沉积包含钽的膜的时间。 源前体具有式（I）：Ta（I5-mnp）（Brm-p）（Cln-p）（Rp）（I）其中m是0至5的整数，n是0至4的整数 ，p为0〜4的整数，R选自氢和低级烷基。

    Methods for chemical vapor deposition and preparation of conformal titanium-based films
    10.
    发明授权
    Methods for chemical vapor deposition and preparation of conformal titanium-based films 失效
    化学气相沉积方法和共形钛基薄膜的制备

    公开(公告)号：US6090709A

    公开(公告)日：2000-07-18

    申请号：US989553

    申请日：1997-12-12

    申请人： Alain E. Kaloyeros ,  Barry C. Arkles

    发明人： Alain E. Kaloyeros ,  Barry C. Arkles

    IPC分类号： C23C16/14 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/44

    CPC分类号： H01L21/76843 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76838

    摘要： Titanium and titanium nitride layers can be produced by chemical vapor deposition (CVD) processes conducted at temperatures below 475.degree. C. The layers may serve as diffusion and adhesion barriers for ultra-large scale integration (ULSI) microelectronic applications. The processes use a titanium halide precursor, such as titanium tetraiodide, and hydrogen or hydrogen in combination with nitrogen, argon, or ammonia to either produce pure titanium metal films, titanium films which alloy with the underlying silicon, or titanium nitride films. The deposition of titanium metal from titanium halide and hydrogen or the deposition of titanium nitride from titanium halide with nitrogen and hydrogen is achieved with the assistance of a low energy plasma. The process allows smooth and reversible transition between deposition of films of either titanium metal or titanium nitride by introduction or elimination of nitrogen or ammonia.

    摘要翻译： 钛和氮化钛层可以通过在低于475℃的温度下进行的化学气相沉积（CVD）工艺生产。这些层可以用作超大规模集成（ULSI）微电子应用的扩散和粘附屏障。 该方法使用卤化钛前体，例如四碘化钛，以及与氮气，氩气或氨合并的氢或氢，以生产纯钛金属膜，与底层硅合金的钛膜或氮化钛膜。 借助于低能量等离子体，可以实现钛卤化物和氢气中钛金属的沉积或钛卤化物与氮气和氢气的沉积。 该方法允许通过引入或除去氮或氨来沉积钛金属或氮化钛的膜之间的平滑和可逆的转变。