Magnetic force microscopy method and apparatus to detect and image
currents in integrated circuits
    1.
    发明授权
    Magnetic force microscopy method and apparatus to detect and image currents in integrated circuits 失效
    磁力显微镜方法和装置,用于检测和图像集成电路中的电流

    公开(公告)号:US5465046A

    公开(公告)日:1995-11-07

    申请号:US215431

    申请日:1994-03-21

    Abstract: A magnetic force microscopy method and improved magnetic tip for detecting and quantifying internal magnetic fields resulting from current of integrated circuits. Detection of the current is used for failure analysis, design verification, and model validation. The interaction of the current on the integrated chip with a magnetic field can be detected using a cantilevered magnetic tip. Enhanced sensitivity for both ac and dc current and voltage detection is achieved with voltage by an ac coupling or a heterodyne technique. The techniques can be used to extract information from analog circuits.

    Abstract translation: 磁力显微镜法和改进的磁头,用于检测和量化集成电路电流产生的内部磁场。 检测电流用于故障分析,设计验证和模型验证。 集成芯片上的电流与磁场的相互作用可以使用悬臂磁头检测。 通过交流耦合或外差技术,通过电压实现对交流和直流电流和电压检测的增强灵敏度。 这些技术可以用于从模拟电路中提取信息。

    Ion-beam apparatus and method for analyzing and controlling integrated
circuits
    2.
    发明授权
    Ion-beam apparatus and method for analyzing and controlling integrated circuits 失效
    用于分析和控制集成电路的离子束装置和方法

    公开(公告)号:US5844416A

    公开(公告)日:1998-12-01

    申请号:US552184

    申请日:1995-11-02

    CPC classification number: G01R31/303

    Abstract: An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

    Abstract translation: 一种用于分析和控制集成电路的离子束装置和方法。 离子束装置包括用于保持一个或多个集成电路(IC)的级; 用于产生聚焦离子束的源装置; 以及光束引导装置,用于引导聚焦离子束照射IC的预定部分足够的时间,以向IC的预定元件提供离子束产生的电输入信号。 该装置和方法具有对IC的故障分析和开发分析的应用,并且允许IC内的逻辑状态或器件参数的改变,控制或编程与IC的所施加的电刺激分开或组合以用于分析。 包括二次粒子检测器和电子泛水枪的本发明的优选实施例还允许通过二次离子或电子对IC进行成像,并允许至少部分去除或擦除离子束产生的电输入信号。

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