公开(公告)号：US5515167A

公开(公告)日：1996-05-07

申请号：US304984

申请日：1994-09-13

申请人： Anthony Ledger ,  Michael Power

发明人： Anthony Ledger ,  Michael Power

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/66 ,  H01L21/68 ,  H01L21/683 ,  G01B9/02

CPC分类号： H01L21/6835 ,  G03F7/707 ,  G03F7/70783 ,  H01L22/12 ,  H01L2924/19041 ,  H01L2924/3025

摘要： A transparent chuck is used to force a semiconductor wafer to take a prescribed shape. Any gap which is formed between the chuck and the wafer can be imaged through the transparent chuck. An interferometer is used to illuminate the gap with a narrow band illumination to create interference fringes in the gap. The fringes can be electronically imaged to create a digital input to a computer. Merit functions corresponding to the total volume of fringes in the gap or to the summation of nearest neighbor slopes of such fringes provide a measure of the thickness of such gap.

摘要翻译： 使用透明卡盘迫使半导体晶片取规定的形状。 通过透明卡盘可以在卡盘和晶片之间形成的任何间隙成像。 干涉仪用于用窄带照明照亮间隙，以在间隙中产生干涉条纹。 条纹可以电子成像，以创建到计算机的数字输入。 对应于间隙中的边缘总体积或这些边缘的最邻近斜率的总和的优点函数提供了这种间隙的厚度的度量。

公开(公告)号：US5502564A

公开(公告)日：1996-03-26

申请号：US304982

申请日：1994-09-13

申请人： Anthony Ledger

发明人： Anthony Ledger

IPC分类号： G01B9/02 ,  G01B11/06 ,  G01B11/14

CPC分类号： G01B11/06 ,  G01B11/14

摘要： An oblique incidence multispectral interferometric apparatus and the process of using it for measuring gross surface height errors of for measuring the total thickness of a substrate such as a semiconductor wafer or a photo mask. The instrumentation can be configured to either measure the air film between a reference flat and the substrate, or it can measure the air film on both sides of a substrate placed between reference flats. If the substrate is a flexible silicon wafer then it can be held against a known reference flat using a vacuum or other suitable means or the wafer surface can be measured from both sides in a free standing mode. In all cases the thickness map of the air space or spaces between the substrate surface or surfaces and a corresponding calibrated reference surface is measured using multispectral pattern matching.

摘要翻译： 倾斜入射多光谱干涉仪，以及用于测量总体表面高度误差的方法，用于测量诸如半导体晶片或光掩模的基底的总厚度。 仪器可以配置为测量参考平面和基板之间的空气膜，或者它可以测量放置在参考平面之间的基板两侧的空气膜。 如果衬底是柔性硅晶片，则可以使用真空或其它合适的方法将其保持在已知的基准平面上，或者可以以独立模式从两侧测量晶片表面。 在所有情况下，使用多光谱图案匹配来测量空气空间或衬底表面或表面之间的空间的厚度图和相应的校准参考表面。

公开(公告)号：US5386119A

公开(公告)日：1995-01-31

申请号：US037069

申请日：1993-03-25

申请人： Anthony Ledger

发明人： Anthony Ledger

IPC分类号： G01B11/06 ,  H01L21/66

CPC分类号： G01B11/0675

摘要： The thickness of the entire surface of a thick semiconductor (94) layer on an insulator is determined all at once by dividing the surface into a plurality of pixels, by varying the length of a variable length optical path (110) in a Michelson interferometer (66) having an infrared source (62), illuminating the entire surface of the layer with an image of the IR source during the length variation operation, and by detecting (64) the product of the intensity (I.sub.s (z)) from the Michelson interferometer and the reflectivity R(t) of the layer as the path length is varied, such being indicative of the thickness of the layer, and by determining, for each pixel, which one of a plurality of groups of stored reflectance values, for a corresponding plurality of thicknesses, best matches the detected values, thereby providing a thickness map of the semiconductor layer.

摘要翻译： 通过改变迈克尔逊干涉仪中的可变长度光路（110）的长度，将绝缘体上的厚半导体（94）层的整个表面的厚度全部确定为将表面划分为多个像素 66）具有红外源（62），在长度变化操作期间用IR源的图像照亮层的整个表面，并且通过检测（64）来自迈克尔逊的强度（Is（z））的乘积 干涉仪和作为路径长度的层的反射率R（t）变化，这表示层的厚度，并且通过针对每个像素确定多组存储的反射率值中的哪一组，对于 相应的多个厚度最好匹配检测值，从而提供半导体层的厚度图。