公开(公告)号：US07737780B2

公开(公告)日：2010-06-15

申请号：US11900917

申请日：2007-09-12

申请人： Pratap N Singh ,  Chandrajit Debnath ,  Rakesh Malik ,  Arnold James D'Souza

发明人： Pratap N Singh ,  Chandrajit Debnath ,  Rakesh Malik ,  Arnold James D'Souza

IPC分类号： H03F3/45

CPC分类号： H03F3/45188 ,  H03F3/45677 ,  H03F2203/45052 ,  H03F2203/45074 ,  H03F2203/45248 ,  H03F2203/45296 ,  H03F2203/45302 ,  H03F2203/45318 ,  H03F2203/45342 ,  H03F2203/45356

摘要： Embodiments of the present invention disclose operational amplifiers which demonstrate good settling behavior with minimum over-shoot or ringing for improving settling behavior. The amplifiers include one or more amplification stages connected to form a symmetric structure. The amplification stage includes a boosting amplifier, a MOS transistor and a compensation capacitor. The MOS transistor can be an NMOS transistor and a PMOS transistor. Using this scheme pole-zero doublets are rearranged in a manner to improve the transient settling response.

摘要翻译： 本发明的实施例公开了运行放大器，其以最小的过冲或振铃来表现出良好的沉降行为，以改善沉降行为。 放大器包括一个或多个连接以形成对称结构的放大级。 放大级包括升压放大器，MOS晶体管和补偿电容器。 MOS晶体管可以是NMOS晶体管和PMOS晶体管。 使用该方案，极点双重重排以改善瞬态稳定响应的方式。