公开(公告)号：US08344373B2

公开(公告)日：2013-01-01

申请号：US12891704

申请日：2010-09-27

申请人： Ayumu Sato ,  Hideya Kumomi ,  Ryo Hayashi ,  Tomohiro Watanabe

发明人： Ayumu Sato ,  Hideya Kumomi ,  Ryo Hayashi ,  Tomohiro Watanabe

IPC分类号： H01L29/786 ,  H01L21/84

CPC分类号： H01L29/7869

摘要： To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.

摘要翻译： 为了在氧化物半导体薄层晶体管中实现阈值电压对电应力的稳定性和抑制传输特性中阈值电压变化的两者。 薄膜晶体管包括氧化物半导体层和设置成与氧化物半导体层接触的栅极绝缘层，其中氧化物半导体层包含氢原子，并且包括至少两个用作氧化物半导体的有源层的区域 并且在层厚度方向上具有不同的平均氢浓度; 并且当用作氧化物半导体的有源层的区域依次定义为从栅极绝缘层的侧面开始第一区域和第二区域时，第一区域的平均氢浓度低于平均氢浓度 的第二个地区。

公开(公告)号：US20120032173A1

公开(公告)日：2012-02-09

申请号：US13188215

申请日：2011-07-21

申请人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

发明人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

IPC分类号： H01L29/786 ,  H01L33/16 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648

摘要： Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

摘要翻译： 提供了一种顶栅薄膜晶体管，其包括在基板上：源电极层; 漏电极层; 氧化物半导体层; 栅极绝缘层; 包含含有选自In，Ga，Zn和Sn中的至少一种元素的非晶氧化物半导体的栅极电极层; 以及含有氢的保护层，其中：所述栅绝缘层形成在所述氧化物半导体层的沟道区上; 栅电极层形成在栅极绝缘层上; 并且在栅电极层上形成保护层。

公开(公告)号：US20140163001A1

公开(公告)日：2014-06-12

申请号：US14235992

申请日：2012-07-27

申请人： Satoshi Yamamoto ,  Junya Shirai ,  Atsuko Ochida ,  Yoshiyuki Fukase ,  Yoshihide Tomata ,  Ayumu Sato ,  Shotaro Miura ,  Kazuko Yonemori ,  Ryokichi Koyama

发明人： Satoshi Yamamoto ,  Junya Shirai ,  Atsuko Ochida ,  Yoshiyuki Fukase ,  Yoshihide Tomata ,  Ayumu Sato ,  Shotaro Miura ,  Kazuko Yonemori ,  Ryokichi Koyama

IPC分类号： C07D491/107 ,  C07D417/04 ,  C07D471/04 ,  C07D417/14

CPC分类号： C07D471/04 ,  C07D417/04 ,  C07D417/14 ,  C07D491/107

摘要： Provided is a heterocyclic compound having an RORγt inhibitory activity. A compound represented by the formula (I): wherein ring A is an optionally substituted cyclic group, Q is a bond, optionally substituted C1-10 alkylene, optionally substituted C2-10 alkenylene, or optionally substituted C2-10 alkynylene, R1 is a substituent, ring B is a thiazole ring, an isothiazole ring or a dihydrothiazole ring, each of which is optionally further substituted by a substituent in addition to R2, and R2 is an optionally substituted cyclyl-carbonyl-C1-6 alkyl group, an optionally substituted aminocarbonyl-C1-6 alkyl group, an optionally substituted cyclyl-C1-6 alkyl group, an optionally substituted cyclyl-C1-6 alkylamino-carbonyl group, an optionally substituted aminocarbonyl-C2-6 alkenyl group, an optionally substituted C1-6 alkylcarbonylamino-C1-6 alkyl group, an optionally substituted cyclyl-aminocarbonyl group, an optionally substituted cyclyl-carbonyl group or an optionally substituted non-aromatic heterocyclic group, or a salt thereof.

摘要翻译： 提供具有RORγt抑制活性的杂环化合物。 由式（I）表示的化合物：其中环A是任选取代的环状基团，Q是键，任选取代的C 1-10亚烷基，任选取代的C 2-10亚烯基或任选取代的C 2-10亚炔基，R 1是 取代基，环B是噻唑环，异噻唑环或二氢噻唑环，其中R 2独立地任选被取代基任意地进一步被R 2取代，R 2是任选取代的环羰基-C 1-6烷基，任选地 取代的氨基羰基-C 1-6烷基，任选取代的环烷基-C 1-6烷基，任选取代的环基-C 1-6烷基氨基 - 羰基，任选取代的氨基羰基-C 2-6链烯基，任选取代的C 1-6 烷基羰基氨基-C 1-6烷基，任选取代的环 - 氨基羰基，任选取代的环羰基或任选取代的非芳族杂环基，或其盐。

公开(公告)号：US08624240B2

公开(公告)日：2014-01-07

申请号：US13188215

申请日：2011-07-21

申请人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

发明人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648

摘要： Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

摘要翻译： 提供了一种顶栅薄膜晶体管，其包括在基板上：源电极层; 漏电极层; 氧化物半导体层; 栅极绝缘层; 包含含有选自In，Ga，Zn和Sn中的至少一种元素的非晶氧化物半导体的栅极电极层; 以及含有氢的保护层，其中：所述栅绝缘层形成在所述氧化物半导体层的沟道区上; 栅电极层形成在栅极绝缘层上; 并且在栅电极层上形成保护层。

公开(公告)号：US20110039892A1

公开(公告)日：2011-02-17

申请号：US12989379

申请日：2009-04-21

申请人： Masato Yoshida ,  Yasuhisa Kohara ,  Nobuki Sakauchi ,  Ayumu Sato

发明人： Masato Yoshida ,  Yasuhisa Kohara ,  Nobuki Sakauchi ,  Ayumu Sato

IPC分类号： A61K31/44 ,  C07D213/82 ,  C07D409/06 ,  C07D401/06 ,  A61K31/4436 ,  A61K31/4545 ,  A61P13/02

CPC分类号： C07D409/04 ,  C07D213/82

摘要： The present invention aims to provide a compound having a superior selective α1D adrenergic receptor antagonistic action and useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like.The present invention provides a compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.

摘要翻译： 本发明的目的在于提供具有优异的选择性α1D肾上腺素能受体拮抗作用并可用作预防或治疗下尿路疾病等的药剂。 本发明提供由式（I）表示的化合物，其中每个符号如说明书中所定义，或其盐。

公开(公告)号：US20110039846A1

公开(公告)日：2011-02-17

申请号：US12989054

申请日：2009-04-22

申请人： Masato Yoshida ,  Nobuki Sakauchi ,  Ayumu Sato

发明人： Masato Yoshida ,  Nobuki Sakauchi ,  Ayumu Sato

IPC分类号： A61K31/44 ,  C07D213/82 ,  C07D413/10 ,  C07D401/12 ,  C07D413/12 ,  A61K31/4439 ,  A61K31/5377 ,  A61P13/02

CPC分类号： C07D213/82

摘要： The present invention aims to provide an iminopyridine derivative compound having an α1D adrenergic receptor antagonistic action, which is useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

公开(公告)号：US09156837B2

公开(公告)日：2015-10-13

申请号：US14235992

申请日：2012-07-27

申请人： Satoshi Yamamoto ,  Junya Shirai ,  Atsuko Ochida ,  Yoshiyuki Fukase ,  Yoshihide Tomata ,  Ayumu Sato ,  Shotaro Miura ,  Kazuko Yonemori ,  Ryokichi Koyama

发明人： Satoshi Yamamoto ,  Junya Shirai ,  Atsuko Ochida ,  Yoshiyuki Fukase ,  Yoshihide Tomata ,  Ayumu Sato ,  Shotaro Miura ,  Kazuko Yonemori ,  Ryokichi Koyama

IPC分类号： C07D277/30 ,  C07D277/56 ,  C07D211/90 ,  C07D417/12 ,  C07D471/04 ,  C07D401/12 ,  C07D277/24 ,  C07D401/04 ,  C07D417/04 ,  C07D417/14 ,  C07D491/107

CPC分类号： C07D471/04 ,  C07D417/04 ,  C07D417/14 ,  C07D491/107

摘要： A heterocyclic compound having an RORγt inhibitory activity, which is a compound of formula (I) or a salt thereof is provided. The compound has ring A, which is an optionally substituted cyclic group and is bound to a pyrazole ring though Q. Q is a bond, optionally substituted C1-10 alkylene, optionally substituted C2-10 alkenylene, or optionally substituted C2-10 alkynylene. R1 is a substituent. Ring B is a thiazole ring, an isothiazole ring or a dihydrothiazole ring, each of which is optionally further substituted by a substituent in addition to R2. R2 is an optionally substituted cyclyl-carbonyl-C1-6 alkyl group, an optionally substituted aminocarbonyl-C1-6 alkyl group, an optionally substituted cyclyl-C1-6 alkyl group, an optionally substituted cyclyl-C1-6 alkylamino-carbonyl group, an optionally substituted aminocarbonyl-C2-6 alkenyl group, an optionally substituted C1-6 alkylcarbonylamino-C1-6 alkyl group, an optionally substituted cyclyl-aminocarbonyl group, an optionally substituted cyclyl-carbonyl group or an optionally substituted non-aromatic heterocyclic group.

摘要翻译： 提供具有RORγt抑制活性的杂环化合物，其为式（I）化合物或其盐。 该化合物具有环A，其为任选取代的环状基团，并且通过Q键合至吡唑环。Q为键，任选取代的C 1-10亚烷基，任选取代的C 2-10亚烯基或任选取代的C 2-10亚炔基。 R1是取代基。 环B是噻唑环，异噻唑环或二氢噻唑环，除了R2之外，它们各自任选进一步被取代基取代。 R 2是任选取代的环羰基-C 1-6烷基，任选取代的氨基羰基-C 1-6烷基，任选取代的环C 1-6烷基，任选取代的环C 1-6烷基氨基羰基， 任选取代的氨基羰基-C 2-6烯基，任选取代的C 1-6烷基羰基氨基-C 1-6烷基，任选取代的环 - 氨基羰基，任选取代的环羰基或任选取代的非芳族杂环基。

公开(公告)号：US08502217B2

公开(公告)日：2013-08-06

申请号：US12679901

申请日：2008-11-27

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Tomohiro Watanabe

IPC分类号： H01L29/12 ,  H01L23/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L27/01

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×1021 atoms/cm3 or less, and the third insulating layer having a hydrogen content of more than 4×1021 atoms/cm3.

摘要翻译： 提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上 并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 以及与第二绝缘层接触的第三绝缘层，具有4×1021原子/ cm3以下的氢含量的第一绝缘层和第二绝缘层，以及氢含量大于4× 1021原子/ cm3。

公开(公告)号：US08481569B2

公开(公告)日：2013-07-09

申请号：US12900045

申请日：2010-10-07

申请人： Masato Yoshida ,  Nobuki Sakauchi ,  Ayumu Sato

发明人： Masato Yoshida ,  Nobuki Sakauchi ,  Ayumu Sato

IPC分类号： C07D213/78 ,  A61K31/44

CPC分类号： C07D213/82 ,  C07D401/10 ,  C07D413/10

摘要： The present invention aims to provide an iminopyridine derivative compound having an α1Dadrenergic receptor antagonistic action, which is useful as an agent for the prophylaxis or treatment of a lower urinary tract disease and the like. The present invention provides a compound represented by the formula wherein each symbol is as defined in the specification, or a salt thereof.

摘要翻译： 本发明旨在提供具有α1肾上腺素能受体拮抗作用的亚氨基吡啶衍生物化合物，其可用作预防或治疗下尿路疾病等的药剂。 本发明提供由下式表示的化合物，其中每个符号如说明书中所定义，或其盐。

公开(公告)号：US08445902B2

公开(公告)日：2013-05-21

申请号：US12990408

申请日：2009-04-28

申请人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

发明人： Ayumu Sato ,  Ryo Hayashi ,  Hisato Yabuta ,  Masafumi Sano

IPC分类号： H01L29/10 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78621

摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.

摘要翻译： 提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。 薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。 沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄 层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。