TIN PHOSPHATE BARRIER FILM, METHOD, AND APPARATUS
    2.
    发明申请
    TIN PHOSPHATE BARRIER FILM, METHOD, AND APPARATUS 有权
    TIN磷酸盐屏障膜,方法和装置

    公开(公告)号:US20090324830A1

    公开(公告)日:2009-12-31

    申请号:US12553469

    申请日:2009-09-03

    IPC分类号: C23C16/22

    摘要: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

    摘要翻译: 公开了一种用于抑制装置的氧气和水分渗透的方法,包括以下步骤:在所述装置的至少一部分上沉积磷酸铁低液相线温度(LLT)无机材料以产生沉积的磷酸锡LLT材料,并热处理 沉积的LLT材料在基本上无氧和无水的环境中以形成气密密封; 其中沉积LLT材料的步骤包括使用包含钨的电阻加热元件。 还公开了一种有机电子器件,其包括基板,至少一个电子或光电子层和磷酸锡LLT阻挡层,其中电子或光电子层气密地密封在磷酸锡LLT阻挡层和基板之间。 还公开了一种装置,其至少一部分用磷酸铁LLT阻挡层密封。

    Tin phosphate barrier film, method, and apparatus
    5.
    发明申请
    Tin phosphate barrier film, method, and apparatus 审中-公开
    磷酸铁阻隔膜,方法和装置

    公开(公告)号:US20080048178A1

    公开(公告)日:2008-02-28

    申请号:US11509445

    申请日:2006-08-24

    IPC分类号: H01L51/00 H01L21/469

    摘要: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

    摘要翻译: 公开了一种用于抑制装置的氧气和水分渗透的方法,包括以下步骤:在所述装置的至少一部分上沉积磷酸铁低液相线温度(LLT)无机材料以产生沉积的磷酸锡LLT材料,并热处理 沉积的LLT材料在基本上无氧和无水的环境中以形成气密密封; 其中沉积LLT材料的步骤包括使用包含钨的电阻加热元件。 还公开了一种有机电子器件,其包括基板,至少一个电子或光电子层和磷酸锡LLT阻挡层,其中电子或光电子层气密地密封在磷酸铁LLT阻挡层和基板之间。 还公开了一种装置,其至少一部分用磷酸铁LLT阻挡层密封。

    Tin phosphate barrier film, method, and apparatus
    7.
    发明授权
    Tin phosphate barrier film, method, and apparatus 有权
    磷酸铁阻隔膜,方法和装置

    公开(公告)号:US07749811B2

    公开(公告)日:2010-07-06

    申请号:US12553469

    申请日:2009-09-03

    IPC分类号: H01L21/00

    摘要: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

    摘要翻译: 公开了一种用于抑制装置的氧气和水分渗透的方法,包括以下步骤:在所述装置的至少一部分上沉积磷酸铁低液相线温度(LLT)无机材料以产生沉积的磷酸锡LLT材料,并热处理 沉积的LLT材料在基本上无氧和无水的环境中以形成气密密封; 其中沉积LLT材料的步骤包括使用包含钨的电阻加热元件。 还公开了一种有机电子器件,其包括基板,至少一个电子或光电子层和磷酸锡LLT阻挡层,其中电子或光电子层气密地密封在磷酸铁LLT阻挡层和基板之间。 还公开了一种装置,其至少一部分用磷酸铁LLT阻挡层密封。