公开(公告)号：US4555460A

公开(公告)日：1985-11-26

申请号：US528352

申请日：1983-08-31

Applicant: Margret Harms ,  Angelika Bruns ,  Holger Luthje ,  Bernd Matthiessen

Inventor： Margret Harms ,  Angelika Bruns ,  Holger Luthje ,  Bernd Matthiessen

IPC: G03F1/22 ,  H01L21/027 ,  G02B5/00 ,  G02B7/00 ,  G03F1/00

CPC classification number: G03F1/22 ,  Y10S430/168

Abstract: In a mask for X-ray lithography, in which a pattern of a layer corresponding to the structure to be manufactured and consisting of a material opaque to visible light is applied to a thin diaphragm of a material transparent to X-ray radiation, an adjustment with visible radiation, such as laser light, is made possible using a diaphragm consisting of a material opaque to visible light and using adjustment windows of a material transparent to the visible light of the spectrum through the diaphragm.

Abstract translation: 在用于X射线光刻的掩模中，其中与要制造的结构相对应的层的图案由对可见光不透明的材料组成，被施加到对X射线辐射透明的材料的薄膜上， 使用由可见光不透明的材料构成的光阑和使用通过光阑对光谱的可见光透明的材料的调整窗可以实现诸如激光的可见光辐射。

公开(公告)号：US4941942A

公开(公告)日：1990-07-17

申请号：US251630

申请日：1988-09-29

Applicant: Angelika M. Bruns ,  Margret Harms ,  Holger K. G. Luthje ,  Bernd Matthiessen

Inventor： Angelika M. Bruns ,  Margret Harms ,  Holger K. G. Luthje ,  Bernd Matthiessen

IPC: C01B31/36 ,  G03F1/22 ,  H01L21/027

CPC classification number: G03F1/22

Abstract: A method of manufacturing a mask support or diaphragm of SiC for X-ray lithography masks is set forth in which a SiC layer is deposited by means of chemical vapor deposition (CVD) on a substrate in the form of a monocrystalline silicon wafer on at least one of the two major surfaces of the monocrystalline silicon wafer, after which the monocrystalline silicon wafer is removed except an edge region in a selective etching step. According to the invention the following processing steps are used:(a) deposition of the SiC layer with the monocrystalline silicon wafer first being heated in the apparatus provided for the deposition process to a temperature in the range of 1000.degree. to 1350.degree. C. in a H.sub.2 atmosphere and then being etched by a suitable etchant and subsequently being rinsed under the influence of H.sub.2, whereupon the SiC layer is provided from a gas atmosphere containing silicon and hydrocarbons, after which the coated substrate is cooled in a H.sub.2 atmosphere to ambient temperature, and(b) implantation of ions into the SiC layer for mechanically disturbing the crystal structure of the SiC layer.

Abstract translation: 提出了制造用于X射线光刻掩模的SiC的掩模支撑件或隔膜的方法，其中通过化学气相沉积（CVD）在至少在单晶硅晶片的形式的衬底上沉积SiC层 单晶硅晶片的两个主表面之一，之后在选择性蚀刻步骤中去除单晶硅晶片，除了边缘区域。 根据本发明，使用以下处理步骤：（a）首先将SiC层与单晶硅晶片沉积在为沉积工艺提供的装置中加热到1000℃至1350℃范围内的温度 然后通过合适的蚀刻剂进行蚀刻，随后在H2的影响下进行冲洗，随后由含有硅和烃的气体气氛提供SiC层，之后将涂覆的基材在H 2气氛中冷却至环境温度 ，和（b）将离子注入到SiC层中，以机械地干扰SiC层的晶体结构。

公开(公告)号：US4468799A

公开(公告)日：1984-08-28

申请号：US372886

申请日：1982-04-29

Applicant: Margret Harms ,  Holger Luthje ,  Bernd Matthiessen

Inventor： Margret Harms ,  Holger Luthje ,  Bernd Matthiessen

IPC: G03F1/22 ,  H01L21/027 ,  B01J17/00

CPC classification number: G03F1/22

Abstract: The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.

Abstract translation: 通过放射光刻技术制造半导体系统，当重要的是实现非常精细的结构时，需要低应力掩模。 根据本发明，这种掩模包括硼掺杂硅的载体，由不同金属（例如钼和钨）的双层或同一金属层的双层组成的辐射吸收图案，例如 钼，它们以不同的方式沉积。