公开(公告)号：US06319796B1

公开(公告)日：2001-11-20

申请号：US09377043

申请日：1999-08-18

Applicant: Olivier Laparra ,  Ramiro Solis ,  Hunter Brugge ,  Michela S. Love ,  Bijan Moslehi ,  Milind Weling

Inventor： Olivier Laparra ,  Ramiro Solis ,  Hunter Brugge ,  Michela S. Love ,  Bijan Moslehi ,  Milind Weling

IPC: H01L2176

CPC classification number: H01L21/76224 ,  Y10S148/05

Abstract: Disclosed are techniques to provide an integrated circuit, including the provision of improved integrated circuit isolation structures. The techniques include forming a number of trenches in an integrated circuit substrate to define a number of substrate regions that are to be electrically isolated from one another. A dielectric material is deposited in the trenches by exposure to a high density plasma having a first deposition-to-etch ratio. The high density plasma is adjusted to a second deposition-to-etch ratio greater than the first ratio to accumulate the dielectric material on the substrate after at least partially filling the trenches. A portion of the dielectric material is removed to planarize the workpiece. A number of components, such as insulated gate field effect transistors, may be subsequently formed in the substrate regions between the trenches.

Abstract translation: 公开了提供集成电路的技术，包括提供改进的集成电路隔离结构。 这些技术包括在集成电路衬底中形成多个沟槽以限定要彼此电绝缘的多个衬底区域。 通过暴露于具有第一沉积到蚀刻比的高密度等离子体，在沟槽中沉积电介质材料。 将高密度等离子体调整到大于第一比率的第二沉积蚀刻比，以在至少部分地填充沟槽之后在基板上积累电介质材料。 去除介电材料的一部分以使工件平坦化。 可以随后在沟槽之间的衬底区域中形成多个组件，例如绝缘栅场效应晶体管。

公开(公告)号：US06211045B1

公开(公告)日：2001-04-03

申请号：US09452291

申请日：1999-11-30

Applicant: Victor Liang ,  Mark Rubin ,  Bijan Moslehi

Inventor： Victor Liang ,  Mark Rubin ,  Bijan Moslehi

IPC: H01L214763

CPC classification number: H01L21/28247 ,  H01L21/3144

Abstract: A method is presented in which nitrogen-based gas in incorporated in polysilicon gate re-oxidation to improve hot carrier performance. A gate oxide layer is formed. Gate material is deposited on the gate oxide layer. The gate material is etched to form a gate structure. The gate oxide layer and the gate are re-oxidized. During re-oxidation, nitrogen-based gas is introduced to nitridize re-oxidized portions of the gate oxide layer.

Abstract translation: 提出了一种纳入多晶硅栅极再氧化中的氮基气体以改善热载体性能的方法。 形成栅氧化层。 栅极材料沉积在栅极氧化物层上。 栅极材料被蚀刻以形成栅极结构。 栅极氧化层和栅极被再次氧化。 在再氧化过程中，引入氮基气体以氮化栅极氧化物层的再氧化部分。