公开(公告)号：US06884334B2

公开(公告)日：2005-04-26

申请号：US10041058

申请日：2001-12-28

Applicant: Konstantin Volodarsky ,  Boguslaw A. Nigorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

Inventor： Konstantin Volodarsky ,  Boguslaw A. Nigorski ,  Rimma Volodarsky ,  Douglas W. Young ,  Cyprian Uzoh ,  Homayoun Talieh

IPC: C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3063 ,  C25D5/00

CPC classification number: H01L21/6719 ,  C25D7/12 ,  C25D17/001 ,  H01L21/67028 ,  Y10S134/902

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract translation: 本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。 在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。 然后可以使用相同的容纳室来冲洗和清洁相同的晶片。 结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。 因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。