公开(公告)号：US06995032B2

公开(公告)日：2006-02-07

申请号：US10610329

申请日：2003-06-30

申请人： Michael T. Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

发明人： Michael T. Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L2224/48463 ,  H01L2224/73265

摘要： A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

公开(公告)号：US20060079082A1

公开(公告)日：2006-04-13

申请号：US11273008

申请日：2005-11-14

申请人： Michael Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

发明人： Michael Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

IPC分类号： H01L21/4763

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L2224/48463 ,  H01L2224/73265

摘要： A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

摘要翻译： 提供了一种使用具有第一和第二相对侧的半导体衬底形成半导体器件的方法，以及在衬底的第二侧上的至少一个器件层，所述至少一个器件层包括第一和第二器件部分。 第一沟槽形成在第一和第二器件部分之间的衬底的第一侧。 第二沟槽形成在第一和第二器件部分之间的衬底的第二侧。

公开(公告)号：US20130299858A1

公开(公告)日：2013-11-14

申请号：US13466590

申请日：2012-05-08

申请人： Pritish Kar ,  David Beardsley Slater, JR. ,  Matthew Donofrio ,  Brad Williams

发明人： Pritish Kar ,  David Beardsley Slater, JR. ,  Matthew Donofrio ,  Brad Williams

IPC分类号： H01L33/62

CPC分类号： H01L33/40 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.

摘要翻译： 发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。 接触结构包括至少一个电镀接触层。 接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。 电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。 还讨论了相关的制造方法。

公开(公告)号：US07368756B2

公开(公告)日：2008-05-06

申请号：US11273008

申请日：2005-11-14

申请人： Michael T. Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

发明人： Michael T. Bruhns ,  Brad Williams ,  Jeff LaHaye ,  Peter Andrews

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L2224/48463 ,  H01L2224/73265

摘要： A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

摘要翻译： 提供了一种使用具有第一和第二相对侧的半导体衬底形成半导体器件的方法，以及在衬底的第二侧上的至少一个器件层，所述至少一个器件层包括第一和第二器件部分。 第一沟槽形成在第一和第二器件部分之间的衬底的第一侧。 第二沟槽形成在第一和第二器件部分之间的衬底的第二侧。

公开(公告)号：US09437783B2

公开(公告)日：2016-09-06

申请号：US13466590

申请日：2012-05-08

申请人： Pritish Kar ,  David Beardsley Slater, Jr. ,  Matthew Donofrio ,  Brad Williams

发明人： Pritish Kar ,  David Beardsley Slater, Jr. ,  Matthew Donofrio ,  Brad Williams

IPC分类号： H01L21/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38

CPC分类号： H01L33/40 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.

摘要翻译： 发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。 接触结构包括至少一个电镀接触层。 接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。 电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。 还讨论了相关的制造方法。