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1.发明授权Light emitting diode (LED) contact structures and process for fabricating the same 有权发光二极管（LED）接触结构及其制造方法公开(公告)号：US09437783B2
公开(公告)日：2016-09-06
申请号：US13466590
申请日：2012-05-08
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
摘要翻译： 发光器件包括被配置为提供由于其中的载流子复合而发光的有源层，有源层上的表面和表面上的导电接触结构。 接触结构包括至少一个电镀接触层。 接触结构可以包括符合下表面的表面粗糙度的子层，并且电镀接触层可以基本上没有下表面的表面粗糙度。 电镀接触层的表面可以是基本上平面的和/或以其它方式构造成反射来自活性层的光发射。 还讨论了相关的制造方法。
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公开(公告)号：US08174037B2
公开(公告)日：2012-05-08
申请号：US11082470
申请日：2005-03-17
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。
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公开(公告)号：US08692267B2
公开(公告)日：2014-04-08
申请号：US13188361
申请日：2011-07-21
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜表面，并延伸到 所述发光区域。
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公开(公告)号：US08183588B2
公开(公告)日：2012-05-22
申请号：US12401843
申请日：2009-03-11
IPC分类号： H01L31/052
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
摘要翻译： 公开了一种发光二极管，其包括导电基板，导电基板上的接合金属和接合金属上的阻挡金属层。 镜面层被阻挡金属层封装，并通过阻挡层与结合金属隔离。 p型氮化镓外延层位于封装反射镜上，氮化铟镓有源层位于p型层上，n型氮化镓层位于铟镓氮层上，形成接合焊盘 到n型氮化镓层。
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公开(公告)号：US08154039B2
公开(公告)日：2012-04-10
申请号：US12401832
申请日：2009-03-11
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译： 公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。 二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在 非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。
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公开(公告)号：USRE43412E1
公开(公告)日：2012-05-29
申请号：US12899228
申请日：2010-10-06
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L24/03 , H01L24/05 , H01L33/005 , H01L2224/02166 , H01L2224/04042 , H01L2224/05599 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/0103 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/00
摘要： A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket passivation layer over the epitaxial layers and ohmic contacts of a diode, depositing a photoresist layer over the blanket passivation layer, opening a via through the photoresist above the ohmic contacts and on the blanket passivation layer, removing the portion of the blanket passivation layer defined by the via to expose the surface of the ohmic contact, depositing a metal layer on the remaining photoresist, and on the exposed portion of the ohmic contact defined by the via, and removing the remaining photoresist to thereby concurrently remove any metal on the photoresist and to thereby establish a metal bond pad on the ohmic contact in the via.
摘要翻译： 公开了一种用于将焊盘附接到二极管的欧姆接触的方法，同时降低了光刻步骤的复杂性。 该方法包括以下步骤：在二极管的外延层和欧姆接头之上形成覆盖钝化层，在覆盖钝化层上沉积光致抗蚀剂层，在欧姆接触点上方和在覆盖钝化层上打开穿过光致抗蚀剂的通孔，去除 由通孔限定的覆盖钝化层的部分以暴露欧姆接触的表面，在剩余的光致抗蚀剂上沉积金属层，以及在由通孔限定的欧姆接触的暴露部分上，并且从而除去剩余的光致抗蚀剂 同时去除光致抗蚀剂上的任何金属，从而在通孔的欧姆接触面上建立金属接合焊盘。
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7.发明授权Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法公开(公告)号：US07294859B2
公开(公告)日：2007-11-13
申请号：US11057661
申请日：2005-02-14
IPC分类号： H01L29/15
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译： 公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。 该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火 所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。
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8.发明授权公开(公告)号：US07259402B2
公开(公告)日：2007-08-21
申请号：US10951042
申请日：2004-09-22
IPC分类号： H01L31/02
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译： 公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。 该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分 从而减小接合的基板，有源部分和副安装结构的整体厚度。 所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的 有源部分和引线框架之间的电接触。
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公开(公告)号：USD616839S1
公开(公告)日：2010-06-01
申请号：US29327793
申请日：2008-11-13
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公开(公告)号：USD582865S1
公开(公告)日：2008-12-16
申请号：US29280949
申请日：2007-06-11
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