公开(公告)号：US08687266B2

公开(公告)日：2014-04-01

申请号：US13503937

申请日：2010-10-29

Applicant: Chun-Hyuk Lee ,  Byung-Uk Kim ,  Mun-Pyo Hong ,  Hong Choi ,  Byung-Seong Bae

Inventor： Chun-Hyuk Lee ,  Byung-Uk Kim ,  Mun-Pyo Hong ,  Hong Choi ,  Byung-Seong Bae

IPC: G02B26/00

CPC classification number: G02F1/167 ,  G02F1/133512 ,  G02F2001/1676

Abstract: The present invention relates to an electric-field drive display device. According to one embodiment of the present invention, the electric-field drive display device comprises: a first substrate; a first electrode which is formed on the first substrate; a second electrode which is formed on the first substrate and is disposed in parallel with the first electrode; a drive partition wall which is formed on the first electrode and the second electrode and has a plurality of opening and closing holes; and a plurality of drive bodies which are disposed inside each of the opening and closing holes. Consequently, the electric-field drive display device according to one embodiment of the present invention can adjust the amount of light transmitted and so display the desired image by adjusting the positions of the drive bodies in the horizontal direction through the use of electrical force.

Abstract translation: 电场驱动显示装置技术领域本发明涉及电场驱动显示装置。 根据本发明的一个实施例，电场驱动显示装置包括：第一基板; 形成在第一基板上的第一电极; 第二电极，形成在第一基板上并与第一电极平行设置; 驱动分隔壁，其形成在所述第一电极和所述第二电极上，并且具有多个开闭孔; 以及设置在每个所述开闭孔内的多个驱动体。 因此，根据本发明的一个实施例的电场驱动显示装置可以通过使用电力调节驱动体在水平方向上的位置来调节透光量并从而显示所需图像。

公开(公告)号：US07271857B2

公开(公告)日：2007-09-18

申请号：US10367743

申请日：2003-02-19

Applicant: Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

Inventor： Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

IPC: G02F1/136 ,  G02F1/1343

CPC classification number: G02F1/1368 ,  G02F1/136213 ,  H01L27/1255

Abstract: A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Abstract translation: 在绝缘基板上形成用于存储电容器的源电极和金属图案，在基板上形成具有掺杂源极区域和掺杂漏极区域的硅层，并且源极和漏极区域直接接触源极电极， 金属图案。 在其上形成栅极绝缘膜，并且在与金属图案相对的栅极绝缘膜上形成存储电极。 形成覆盖存储电极的钝化膜，并在其上形成像素电极。 像素电极直接连接到漏极区域或金属图案。

公开(公告)号：US06784950B2

公开(公告)日：2004-08-31

申请号：US10367769

申请日：2003-02-19

Applicant: Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

Inventor： Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

IPC: G02F113

CPC classification number: G02F1/1368 ,  G02F1/136213 ,  H01L27/1255

Abstract: A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Abstract translation: 在绝缘基板上形成用于存储电容器的源极和金属图案，在基板上形成具有掺杂源极区域和掺杂漏极区域的硅层，并且源极和漏极区域直接接触源极电极， 金属图案。 在其上形成栅极绝缘膜，并且在与金属图案相对的栅极绝缘膜上形成存储电极。 形成覆盖存储电极的钝化膜，并在其上形成像素电极。 像素电极直接连接到漏极区域或金属图案。

公开(公告)号：US5840602A

公开(公告)日：1998-11-24

申请号：US686242

申请日：1996-07-25

Applicant: Min-Koo Han ,  Byung-Hyuk Min ,  Cheol-Min Park ,  Byung-Seong Bae

Inventor： Min-Koo Han ,  Byung-Hyuk Min ,  Cheol-Min Park ,  Byung-Seong Bae

IPC: H01L29/786 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/8238

CPC classification number: H01L27/1214

Abstract: Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.

Abstract translation: 形成薄膜晶体管的方法包括以下步骤：在电绝缘基板的表面上形成预定导电类型的非晶硅（a-Si）层，然后在非晶硅层上形成第一绝缘层。 然后对第一绝缘层和非晶硅层进行构图以限定具有暴露的侧壁的间隔开的无定形源极和漏极区域。 然后在源区和漏区之间的空间中沉积非晶硅沟道区，并与其侧壁接触。 然后在通道区域上形成绝缘栅电极的步骤之前，执行退火步骤以将非晶硅源，漏极和沟道区域转换为多晶硅。

公开(公告)号：US5710053A

公开(公告)日：1998-01-20

申请号：US563388

申请日：1995-11-28

Applicant: Byung-seong Bae

Inventor： Byung-seong Bae

IPC: G02F1/136 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L21/84

CPC classification number: H01L29/66757 ,  H01L29/42384

Abstract: A method for manufacturing a thin-film transistor includes forming a silicon pattern on a substrate; forming a gate insulating film by a thermal oxidization process or a deposition process; forming a gate pattern by depositing a gate electrode and a gate line; implanting ions into the substrate; forming an interlayer-insulating film; activating the implanted ions; forming a gate contact hole and source-drain contact holes; and forming a wiring pattern. The resultant thin-film transistor increases reliability of devices and yield by reducing breakdown voltage between the gate line and the silicon pattern and improving characteristics of the insulation-destruction.

Abstract translation: 一种制造薄膜晶体管的方法，包括在衬底上形成硅图案; 通过热氧化工艺或沉积工艺形成栅极绝缘膜; 通过沉积栅电极和栅极线形成栅极图案; 将离子注入衬底; 形成层间绝缘膜; 激活注入的离子; 形成栅极接触孔和源极 - 漏极接触孔; 并形成布线图案。 所得到的薄膜晶体管通过降低栅极线和硅图案之间的击穿电压并改善绝缘破坏的特性，增加器件的可靠性和产量。

公开(公告)号：US09214106B2

公开(公告)日：2015-12-15

申请号：US13529690

申请日：2012-06-21

Applicant: Sang Youn Han ,  Byung Seong Bae ,  Jun Ho Song ,  Sung Hoon Yang ,  Ho Sik Jeon

Inventor： Sang Youn Han ,  Byung Seong Bae ,  Jun Ho Song ,  Sung Hoon Yang ,  Ho Sik Jeon

IPC: G01N21/00 ,  G01J1/00 ,  G09G3/20

CPC classification number: G09G3/2092 ,  G09G2354/00 ,  G09G2360/142

Abstract: Provided are a photo sensor, a display device including the same, and a driving method thereof. The photo sensor includes: an amplifying element including an input terminal coupled to a scan line for receiving a scan signal, an output terminal configured to output a sensing signal, and a control terminal connected to a first node; a sensing capacitor connected with the first node; a photosensitive sensing element including a control terminal connected with a terminal of a first control signal, an output terminal connected with the first node, and an input terminal; and a reset element connected with the output terminal of the amplifying element and resetting the output terminal of the amplifying element to second voltage according to a reset control signal.

Abstract translation: 提供了一种光传感器，包括该传感器的显示装置及其驱动方法。 光传感器包括：放大元件，包括耦合到用于接收扫描信号的扫描线的输入端子，被配置为输出感测信号的输出端子和连接到第一节点的控制端子; 与第一节点连接的感测电容器; 感光元件，包括与第一控制信号的端子连接的控制端子，与第一节点连接的输出端子和输入端子; 以及与放大元件的输出端子连接的复位元件，并根据复位控制信号将放大元件的输出端子复位为第二电压。

公开(公告)号：US20050161677A1

公开(公告)日：2005-07-28

申请号：US11082983

申请日：2005-03-18

Applicant: Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

Inventor： Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

IPC: G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/1368 ,  G02F1/136213 ,  H01L27/1255

Abstract: A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Abstract translation: 在绝缘基板上形成用于存储电容器的源极和金属图案，在基板上形成具有掺杂源极区域和掺杂漏极区域的硅层，并且源极和漏极区域直接接触源极电极， 金属图案。 在其上形成栅极绝缘膜，并且在与金属图案相对的栅极绝缘膜上形成存储电极。 形成覆盖存储电极的钝化膜，并在其上形成像素电极。 像素电极直接连接到漏极区域或金属图案。

公开(公告)号：US06317173B1

公开(公告)日：2001-11-13

申请号：US09222783

申请日：1998-12-30

Applicant: Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

Inventor： Byung-Hoo Jung ,  Chang-Won Hwang ,  Byung-Seong Bae

IPC: G02F1136

CPC classification number: G02F1/1368 ,  G02F1/136213 ,  H01L27/1255

Abstract: A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Abstract translation: 在绝缘基板上形成用于存储电容器的源极和金属图案，在基板上形成具有掺杂源极区域和掺杂漏极区域的硅层，并且源极和漏极区域直接接触源极电极， 金属图案。 在其上形成栅极绝缘膜，并且在与金属图案相对的栅极绝缘膜上形成存储电极。 形成覆盖存储电极的钝化膜，并在其上形成像素电极。 像素电极直接连接到漏极区域或金属图案。

公开(公告)号：US5739878A

公开(公告)日：1998-04-14

申请号：US612780

申请日：1996-03-08

Applicant: Byung-seong Bae

Inventor： Byung-seong Bae

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/136

CPC classification number: G02F1/134336 ,  G02F1/1368 ,  G02F2201/121

Abstract: An LCD device with reduced off-current comprising one glass substrate on which a TFT array, a first ITO common electrode and data gate line are formed, a confronting glass substrate joined to the other glass substrate and on which a color filter array and a second ITO common electrode are formed, and a liquid crystal poured between the joined glass substrates. Part of the second ITO common electrode positionally corresponding to a respective TFT is eliminated, thereby preventing electrons from gathering on the upper surface of the thin film transistor (TFT).

Abstract translation: 一种具有降低的截止电流的LCD器件，包括一个玻璃基板，TFT阵列，第一ITO公共电极和数据栅极线形成在其上，与另一个玻璃基板接合的面对的玻璃基板，在其上具有滤色器阵列和第二 形成ITO公共电极，并且在接合的玻璃基板之间注入液晶。 位置上对应于各个TFT的第二ITO公共电极的一部分被消除，从而防止电子聚集在薄膜晶体管（TFT）的上表面上。

公开(公告)号：US5668381A

公开(公告)日：1997-09-16

申请号：US670031

申请日：1996-06-25

Applicant: Byung Seong Bae

Inventor： Byung Seong Bae

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/417

CPC classification number: G02F1/13454 ,  H01L27/124 ,  H01L29/66757 ,  Y10S148/15

Abstract: A thin film transistor formed in a liquid crystal display, comprising; a silicon layer formed over a transparent substrate, a first insulating layer formed over the silicon layer, a gate electrode and a plurality of gate line electrodes formed on the first insulating layer, a second insulating layer formed over the gate electrode and the gate line electrodes having a plurality of contact holes, and a metal line ohmically connected to the gate electrode and the plurality of gate line electrodes through the plurality of contact holes.

Abstract translation: 一种形成在液晶显示器中的薄膜晶体管，包括： 形成在透明基板上的硅层，形成在硅层上的第一绝缘层，形成在第一绝缘层上的栅极电极和多个栅极线电极，形成在栅电极和栅极线电极上的第二绝缘层 具有多个接触孔，以及通过所述多个接触孔与所述栅电极和所述多个栅极线电极欧姆连接的金属线。