公开(公告)号：US07087962B1

公开(公告)日：2006-08-08

申请号：US08433561

申请日：1995-05-03

申请人： Mitsufumi Codama

发明人： Mitsufumi Codama

IPC分类号： H01L27/01 ,  H01L29/76 ,  H01L29/04 ,  H01L27/12 ,  H01L29/94

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  Y10S148/15 ,  Y10S438/907

摘要： A MOS transistor having a LDD structure is described. In accordance with the present invention a MOS transistor includes a low impurity concentration region formed in a semiconductor film between an end of a gate electrode and a source or drain. The transistor includes an insulating film extending beyond the gate electrode in the direction of the source and drain, the insulating film having a thicker portion over the channel region of the semiconductor film and a thinner portion over the source and drain regions of the semiconductor film, such that LDD regions can be formed by utilizing the thickness difference between the thick portion of the insulating film and the thin portion of the insulating.

摘要翻译： 描述具有LDD结构的MOS晶体管。 根据本发明，MOS晶体管包括形成在栅电极的端部和源极或漏极之间的半导体膜中的低杂质浓度区域。 晶体管包括在源极和漏极的方向上延伸超过栅电极的绝缘膜，绝缘膜在半导体膜的沟道区上方具有较厚的部分，并且在半导体膜的源极和漏极区上方的较薄部分， 使得LDD区域可以通过利用绝缘膜的厚部分和绝缘体的薄部分之间的厚度差来形成。

公开(公告)号：US06262421B1

公开(公告)日：2001-07-17

申请号：US09551482

申请日：2000-04-18

申请人： Nang Tri Tran

发明人： Nang Tri Tran

IPC分类号： H01L27146

CPC分类号： H01L21/8222 ,  H01L27/12 ,  H01L27/14618 ,  H01L27/14663 ,  H01L27/14692 ,  H01L2924/0002 ,  Y10S148/15 ,  Y10S438/945 ,  H01L2924/00

摘要： A solid state radiation detector for medical imaging incorporates an array of transistors and a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors. The transistors may reside on a plurality of tiles, with the continuous radiation detecting layer being disposed over the tiles.

摘要翻译： 用于医学成像的固态放射线检测器包括晶体管阵列和位于晶体管上并电耦合到晶体管的连续辐射检测层。 晶体管可以驻留在多个瓦片上，其中连续辐射检测层设置在瓦片上。

公开(公告)号：US5942756A

公开(公告)日：1999-08-24

申请号：US962626

申请日：1997-11-03

申请人： Nang Tri Tran

发明人： Nang Tri Tran

IPC分类号： H01L27/14 ,  G01T1/24 ,  H01L21/8222 ,  H01L27/12 ,  H01L27/146 ,  H01L31/00 ,  H01L31/09 ,  G01N23/04 ,  H01L31/115

CPC分类号： H01L21/8222 ,  H01L27/12 ,  H01L27/14618 ,  H01L27/14663 ,  H01L27/14692 ,  H01L2924/0002 ,  Y10S148/15 ,  Y10S438/945

摘要： A solid state radiation detector provides a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor layer, is disposed over the modules. The radiation detecting layer generates electrical charge representative of a pattern of radiation. The thin film transistors are used to sense the electrical charge on a pixel-by-pixel basis to form a representation of an image. A continuous insulating layer can be disposed between the radiation detecting layer and a continuous conducting layer.

摘要翻译： 固态放射线检测器提供以二维阵列彼此相邻布置的多个模块。 每个模块包括薄膜晶体管阵列。 诸如光电导体层的连续辐射检测层设置在模块上。 放射线检测层产生代表辐射图案的电荷。 薄膜晶体管用于逐像素地感测电荷以形成图像的表示。 连续的绝缘层可以设置在辐射检测层和连续导电层之间。

公开(公告)号：US5906708A

公开(公告)日：1999-05-25

申请号：US567971

申请日：1995-12-06

申请人： McDonald Robinson ,  Richard C. Westhoff ,  Charles E. Hunt ,  Li Ling

发明人： McDonald Robinson ,  Richard C. Westhoff ,  Charles E. Hunt ,  Li Ling

IPC分类号： B81B3/00 ,  B81C1/00 ,  C09K13/08 ,  H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01L21/762 ,  H01L29/161 ,  H01L21/84 ,  C23F1/24

CPC分类号： H01L29/161 ,  C09K13/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/30604 ,  H01L21/76251 ,  Y10S148/059 ,  Y10S148/15

摘要： Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.

摘要翻译： 包含硅，锗和碳的硅 - 锗基组合物（即Si-Ge-C），用于在衬底上生长Si-Ge-C外延层的方法，特别适用于Si-Ge-C蚀刻的蚀刻剂 并提供了Si-Ge-C组合物的新颖的使用方法。 特别地，本发明涉及Si-Ge-C组合物，特别是用作蚀刻停止剂和用于微电子和纳米技术制造的相关工艺和蚀刻剂。

公开(公告)号：US5883396A

公开(公告)日：1999-03-16

申请号：US733320

申请日：1996-10-17

申请人： Ronald E. Reedy ,  Mark L. Burgener

发明人： Ronald E. Reedy ,  Mark L. Burgener

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/86 ,  H01L27/11 ,  H01L27/12 ,  H01L29/786 ,  H04Q9/00 ,  H01L29/72

CPC分类号： H01L28/20 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02694 ,  H01L21/76264 ,  H01L21/86 ,  H01L27/1112 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78657 ,  H01L21/76281 ,  Y02B60/50 ,  Y10S148/15 ,  Y10S438/967 ,  Y10S438/974 ,  Y10S438/977

摘要： A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The devices are fabricated using conventional bulk silicon CMOS processing techniques. Advantages include single chip architecture, superior high frequency performance, low power consumption and cost effective fabrication.

公开(公告)号：US5818053A

公开(公告)日：1998-10-06

申请号：US658394

申请日：1996-06-05

申请人： Nang Tri Tran

发明人： Nang Tri Tran

IPC分类号： H01L27/14 ,  G01T1/24 ,  H01L21/8222 ,  H01L27/12 ,  H01L27/146 ,  H01L31/00 ,  H01L31/09

CPC分类号： H01L21/8222 ,  H01L27/12 ,  H01L27/14618 ,  H01L27/14663 ,  H01L27/14692 ,  H01L2924/0002 ,  Y10S148/15 ,  Y10S438/945

摘要： A solid state radiation detector and fabrication method therefor provide a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor layer is disposed over the modules. The radiation detecting layer generates electrical charge representative of a pattern of radiation. The thin film transistors are used to sense the electrical charge on a pixel-by-pixel basis to form a representation of an image. A continuous insulating layer can be disposed between the radiation detecting layer and a continuous conducting layer.

摘要翻译： 一种固态放射线检测器及其制造方法，提供以二维阵列彼此相邻设置的多个模块。 每个模块包括薄膜晶体管阵列。 诸如光电导体层的连续辐射检测层设置在模块上。 放射线检测层产生代表辐射图案的电荷。 薄膜晶体管用于逐像素地感测电荷以形成图像的表示。 连续的绝缘层可以设置在辐射检测层和连续导电层之间。

公开(公告)号：US5741718A

公开(公告)日：1998-04-21

申请号：US683096

申请日：1996-07-16

申请人： Mitsufumi Codama ,  Ichiro Takayama ,  Michio Arai

发明人： Mitsufumi Codama ,  Ichiro Takayama ,  Michio Arai

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/86

CPC分类号： H01L27/1214 ,  H01L29/78621 ,  Y10S148/106 ,  Y10S148/15

摘要： In forming a thin film transistor (TFT) having an offset structure or a lightly doped drain (LDD) structure, a blocking material having a lower etching rate than that of a material constructing a gate electrode is formed. By using the blocking material as a mask, a gate electrode material is side-etched selectively to form gate electrodes. The blocking material is processed selectively and remains in a drain region side. Also, an offset region or an LDD region is formed under the blocking material by performing an impurity ion implantation. On the other hand, after the gate electrodes are formed, a resist is added and then light exposure is performed from a source region side using a light blocking material as a mask, so that the resist remains in a drain region side of the gate electrode. Also, by implanting an impurity ion, an offset region or an LDD region is formed in the drain region side.

摘要翻译： 在形成具有偏移结构或轻掺杂漏极（LDD）结构的薄膜晶体管（TFT）的情况下，形成具有比构成栅电极的材料蚀刻速率低的蚀刻速率的阻挡材料。 通过使用阻挡材料作为掩模，选择性地蚀刻栅电极材料以形成栅电极。 阻挡材料被选择性地处理并保留在漏极区域侧。 此外，通过进行杂质离子注入，在阻挡材料下方形成偏移区域或LDD区域。 另一方面，在形成栅电极之后，添加抗蚀剂，然后使用遮光材料作为掩模从源极区域进行曝光，使得抗蚀剂保留在栅电极的漏区侧 。 此外，通过注入杂质离子，在漏区侧形成偏移区域或LDD区域。

公开(公告)号：US5729039A

公开(公告)日：1998-03-17

申请号：US642834

申请日：1996-05-03

申请人： Klaus Dietrich Beyer ,  Taqi Nasser Buti ,  Chang-Ming Hsieh ,  Louis Lu-Chen Hsu

发明人： Klaus Dietrich Beyer ,  Taqi Nasser Buti ,  Chang-Ming Hsieh ,  Louis Lu-Chen Hsu

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/41783 ,  H01L29/78612 ,  Y10S148/15

摘要： An SOI transistor has a self-aligned body contact formed through an extension to the gate, thereby forming the body contact with minimal increase in area and also avoiding the need to tie the source to the body, as in prior art schemes that passed the body contact through the source. The body contact aperture is formed by raising the source and drain to define an initial aperture, depositing a conformal layer that is etched to create aperture-defining sidewalls and etching the contact aperture using these sidewalls to define sidewall support members that support insulating sidewalls to isolate the collection electrode from both the gate and from the source and drain.

摘要翻译： SOI晶体管具有通过到门的延伸形成的自对准体接触，从而以最小的面积增加形成身体接触，并且还避免了将源连接到身体的需要，如通过身体的现有技术方案 通过来源联系。 身体接触孔通过提高源极和漏极以形成初始孔径而形成，沉积被蚀刻以形成孔限定侧壁的共形层并且使用这些侧壁蚀刻接触孔以限定支撑绝缘侧壁以隔离的侧壁支撑构件 收集电极来自闸门和源极和漏极。

公开(公告)号：US5672518A

公开(公告)日：1997-09-30

申请号：US60163

申请日：1993-05-07

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265 ,  H01L31/18

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

摘要翻译： 本发明提供一种半导体光阀装置及其制造方法。 该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。 在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。 晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域 ，以便有效地防止背部通道并且切断入射光。

公开(公告)号：US5670388A

公开(公告)日：1997-09-23

申请号：US542592

申请日：1995-10-13

申请人： Brian John Machesney ,  Jack Allan Mandelman ,  Edward Joseph Nowak

发明人： Brian John Machesney ,  Jack Allan Mandelman ,  Edward Joseph Nowak

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/84

CPC分类号： H01L27/1203 ,  H01L2924/0002 ,  Y10S148/15 ,  Y10S438/98

摘要： Structures and methods are presented for forming a body-substrate connector for an SOI FET. The connector is formed substantially co-aligned with the gate conductor on a side of the device that does not interfere with source and drain. The body is thus held close to the substrate potential and the connector provides a path for majority carriers to quickly leave the body. By contacting the body of the SOI MOSFET device in a manner that does not perturb the charge imaged by the gate, parasitic bipolar effects are eliminated while maintaining the desirable attributes of SOI MOSFET devices, such as low substrate bias sensitivity and steep sub-threshold slope. By forming the connector substantially co-aligned with the gate conductor the connection uses little or no surface area.

摘要翻译： 提出了用于形成用于SOI FET的体衬底连接器的结构和方法。 该连接器在不干扰源极和漏极的装置的一侧基本上与栅极导体共同对准。 因此，本体保持靠近基底电位，并且连接器为多数载体快速离开身体提供了路径。 通过以不扰乱由栅极成像的电荷的方式接触SOI MOSFET器件的主体，消除寄生双极效应，同时保持SOI MOSFET器件的期望属性，例如低衬底偏置灵敏度和陡峭的次阈值斜率 。 通过形成与栅极导体基本上共同对准的连接器，连接使用很少或没有表面积。