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1.
公开(公告)号:US08456911B2
公开(公告)日:2013-06-04
申请号:US13155323
申请日:2011-06-07
申请人: Jiahui Yuan , Yingda Dong , Charles Kwong
发明人: Jiahui Yuan , Yingda Dong , Charles Kwong
IPC分类号: G11C11/34
CPC分类号: G11C16/26 , G11C11/5642 , G11C16/3454 , G11C16/349 , G11C29/021 , G11C29/028
摘要: A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.
摘要翻译: 确定并优化循环存储器的第一个读通过电压。 为一个或多个管芯确定一个或多个启动读通过电压。 该系统基于编程/擦除擦除周期的数量,第一读取通过电压和相应的启动读取通过电压来动态地计算当前的读取通过电压。 使用计算出的电流读通过电压从一个或多个非易失性存储元件读取数据。
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2.
公开(公告)号:US20120314499A1
公开(公告)日:2012-12-13
申请号:US13155323
申请日:2011-06-07
申请人: Jiahui Yuan , Yingda Dong , Charles Kwong
发明人: Jiahui Yuan , Yingda Dong , Charles Kwong
CPC分类号: G11C16/26 , G11C11/5642 , G11C16/3454 , G11C16/349 , G11C29/021 , G11C29/028
摘要: A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.
摘要翻译: 确定并优化循环存储器的第一个读通过电压。 为一个或多个管芯确定一个或多个启动读通过电压。 该系统基于编程/擦除擦除周期的数量,第一读取通过电压和相应的启动读取通过电压来动态地计算当前的读取通过电压。 使用计算出的电流读通过电压从一个或多个非易失性存储元件读取数据。
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