公开(公告)号：US08456911B2

公开(公告)日：2013-06-04

申请号：US13155323

申请日：2011-06-07

申请人： Jiahui Yuan ,  Yingda Dong ,  Charles Kwong

发明人： Jiahui Yuan ,  Yingda Dong ,  Charles Kwong

IPC分类号： G11C11/34

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3454 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028

摘要： A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.

摘要翻译： 确定并优化循环存储器的第一个读通过电压。 为一个或多个管芯确定一个或多个启动读通过电压。 该系统基于编程/擦除擦除周期的数量，第一读取通过电压和相应的启动读取通过电压来动态地计算当前的读取通过电压。 使用计算出的电流读通过电压从一个或多个非易失性存储元件读取数据。

公开(公告)号：US20120314499A1

公开(公告)日：2012-12-13

申请号：US13155323

申请日：2011-06-07

申请人： Jiahui Yuan ,  Yingda Dong ,  Charles Kwong

发明人： Jiahui Yuan ,  Yingda Dong ,  Charles Kwong

IPC分类号： G11C16/26 ,  G11C16/06 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C11/5642 ,  G11C16/3454 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028

摘要： A first read pass voltage is determined and optimized for cycled memory. One or more starting read pass voltages are determined for one or more dies. The system dynamically calculates a current read pass voltage based on the number of program/erase erase cycles, the first read pass voltage and the respective starting read pass voltage. Data is read from one or more non-volatile storage elements using the calculated current read pass voltage.

摘要翻译： 确定并优化循环存储器的第一个读通过电压。 为一个或多个管芯确定一个或多个启动读通过电压。 该系统基于编程/擦除擦除周期的数量，第一读取通过电压和相应的启动读取通过电压来动态地计算当前的读取通过电压。 使用计算出的电流读通过电压从一个或多个非易失性存储元件读取数据。

公开(公告)号：US20110309412A1

公开(公告)日：2011-12-22

申请号：US13148912

申请日：2010-04-08

申请人： Jiahui Yuan ,  John D. Cressler

发明人： Jiahui Yuan ,  John D. Cressler

IPC分类号： H01L29/70 ,  H01L21/22

CPC分类号： H01L29/7378 ,  H01L29/0634 ,  H01L29/0821

摘要： Superjunction collectors for transistors are discussed in this application. According to one embodiment, a bipolar transistor having a superjunction collector structure can comprise a collector electrode, a base electrode, an emitter electrode, a collector-base space charge region, and a superjunction collector. The collector-base space charge region can be disposed in electrical communication between the collector electrode and the base electrode. The superjunction collector region can be disposed in the collector-base space charge region. The superjunction collector region can comprise a plurality of alternating horizontally disposed P-type and N-type layers. The layers can be horizontally disposed layers that are layered on top of each other. The P-type and N-type layers can be doped with different types of doping levels. Other aspects, embodiments, and features are also discussed and claimed.

摘要翻译： 在本应用中讨论了用于晶体管的超级集电极。 根据一个实施例，具有超级集电极结构的双极晶体管可以包括集电极，基极，发射极，集电极 - 基极空间电荷区和超结集电极。 集电极 - 空间电荷区域可以设置在集电极和基极之间的电连通中。 超集电极区域可以设置在集电极 - 空间电荷区域中。 超结集电区域可以包括多个交替的水平布置的P型和N型层。 层可以是层叠在彼此之上的水平布置的层。 P型和N型层可掺杂不同类型的掺杂水平。 还讨论并要求保护其他方面，实施例和特征。

公开(公告)号：US08546850B2

公开(公告)日：2013-10-01

申请号：US13148912

申请日：2010-04-08

申请人： Jiahui Yuan ,  John D. Cressler

发明人： Jiahui Yuan ,  John D. Cressler

IPC分类号： H01L29/66

CPC分类号： H01L29/7378 ,  H01L29/0634 ,  H01L29/0821

摘要： Superjunction collectors for transistors are discussed in this application. According to one embodiment, a bipolar transistor having a superjunction collector structure can comprise a collector electrode, a base electrode, an emitter electrode, a collector-base space charge region, and a superjunction collector. The collector-base space charge region can be disposed in electrical communication between the collector electrode and the base electrode. The superjunction collector region can be disposed in the collector-base space charge region. The superjunction collector region can comprise a plurality of alternating horizontally disposed P-type and N-type layers. The layers can be horizontally disposed layers that are layered on top of each other. The P-type and N-type layers can be doped with different types of doping levels. Other aspects, embodiments, and features are also discussed and claimed.

摘要翻译： 在本应用中讨论了用于晶体管的超级集电极。 根据一个实施例，具有超级集电极结构的双极晶体管可以包括集电极，基极，发射极，集电极 - 基极空间电荷区和超结集电极。 集电极 - 空间电荷区域可以设置在集电极和基极之间的电连通中。 超集电极区域可以设置在集电极 - 空间电荷区域中。 超结集电区域可以包括多个交替的水平布置的P型和N型层。 层可以是层叠在彼此之上的水平布置的层。 P型和N型层可掺杂不同类型的掺杂水平。 还讨论并要求保护其他方面，实施例和特征。