公开(公告)号：US5431772A

公开(公告)日：1995-07-11

申请号：US963890

申请日：1992-10-19

申请人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

发明人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

IPC分类号： H01L21/00 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/67069 ,  H01L21/31116

摘要： A two step method of etching a silicon nitride layer carrying a surface oxygen film from a substrate in a plasma reactor employs the steps of (1) a breakthrough step of employing a plasma of oxygen free etchant gases to break through and to remove the surface oxygen containing film from the surface of the silicon nitride layer, and (2) a main step of etching the newly exposed silicon nitride with etchant gases having high selectivity with respect to the silicon oxide underlying the silicon nitride. The plasma etching can be performed while employing magnetic- enhancement of the etching. The plasma etching is performed in a plasma reactor comprising a low pressure, single wafer tool. Plasma etching is performed while employing magnetic-enhancement of the etching. The etchant gases include a halide such as a bromide and a fluoride in the breakthrough step. The etchant gases include an oxygen and bromine containing gas in the main step.

摘要翻译： 在等离子体反应器中从衬底上刻蚀载有表面氧膜的氮化硅层的两步法是采用以下步骤：（1）采用无氧蚀刻剂气体的等离子体穿透并除去表面氧的突破步骤 （2）主要步骤，用氮化硅下面的氧化硅对具有高选择性的蚀刻剂气蚀刻新曝光的氮化硅。 可以在采用磁性增强蚀刻的同时进行等离子体蚀刻。 等离子体蚀刻在包括低压单晶片工具的等离子体反应器中进行。 在进行蚀刻的磁加强的同时进行等离子体蚀刻。 在突破步骤中，蚀刻剂气体包括卤化物如溴化物和氟化物。 在主要步骤中，蚀刻剂气体包括含氧和溴的气体。

公开(公告)号：US5188704A

公开(公告)日：1993-02-23

申请号：US700871

申请日：1991-05-09

申请人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

发明人： Wayne T. Babie ,  Kenneth L. Devries ,  Bang C. Nguyen ,  Chau-Hwa J. Yang

IPC分类号： H01L21/311

CPC分类号： H01L21/31116

摘要： A two step method of etching a silicon nitride layer carrying a surface oxygen film from a substrate in a plasma reactor employs the steps of (1) a breakthrough step of employing a plasma of oxygen free etchant gases to break through and to remove the surface oxygen containing film from the surface of the silicon nitride layer, and (2) a main step of etching the newly exposed silicon nitride with etchant gases having high selectivity with respect to the silicon oxide underlying the silicon nitride. The plasma etching can be performed while employing magnetic-enhancement of the etching. The plasma etching is performed in a plasma reactor comprising a low pressure, single wafer tool. Plasma etching is performed while employing magnetic-enhancement of the etching. The etchant gases include a halide such as a bromide and a fluoride in the breakthrough step. The etchant gases include an oxygen and bromine containing gas in the main step.

摘要翻译： 在等离子体反应器中从衬底上刻蚀载有表面氧膜的氮化硅层的两步法是采用以下步骤：（1）采用无氧蚀刻剂气体的等离子体穿透并除去表面氧的突破步骤 （2）主要步骤，用氮化硅下面的氧化硅对具有高选择性的蚀刻剂气蚀刻新曝光的氮化硅。 可以在使用蚀刻的磁性增强的同时进行等离子体蚀刻。 等离子体蚀刻在包括低压单晶片工具的等离子体反应器中进行。 在进行蚀刻的磁加强的同时进行等离子体蚀刻。 在突破步骤中，蚀刻气体包括卤化物如溴化物和氟化物。 在主要步骤中，蚀刻剂气体包括含氧和溴的气体。