公开(公告)号：US08524188B2

公开(公告)日：2013-09-03

申请号：US13539183

申请日：2012-06-29

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/021

CPC分类号： C01B33/037 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/06 ,  F27B14/14 ,  H05B7/18

摘要： A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon.

摘要翻译： 一种方法包括将原料硅材料转移到坩埚中，并使坩埚中的原料硅材料在低于1400摄氏度的温度下进行热能以形成熔融的硅材料，熔融的硅材料具有由 坩埚的内部区域，将熔融的硅材料的暴露的内部区域经受能量源包括配置在暴露区域之上的电弧加热器，并且被间隔开，该电弧加热器暴露区域与电弧加热器的枪口区域之间的间隙 在暴露的熔融硅材料的内部区域的附近形成确定的温度曲线，同时保持熔融的硅材料的外部区域处于低于坩埚的熔点的温度，并且从熔融的硅材料中除去杂质以形成更高的纯度 硅。

公开(公告)号：US08236266B2

公开(公告)日：2012-08-07

申请号：US13187282

申请日：2011-07-20

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/021

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 公开了一种提高冶金级（UMG）硅纯化工艺的产率的方法。 在UMG硅（UMGSi）纯化方法中，在反应室中，同时在同一装置中对其中的硅熔体进行纯化，全部或多种以下技术，包括：坩埚比方法， 添加水溶性物质，控制功率，控制真空压力，排气向上排气，通过高压气体喷射隔离，并通过喷砂除碳，从而减少硅中的氧，碳和其他杂质 熔化，满足太阳能电池的高纯硅标准，提高产量同时保持低成本，并避免随着时间的推移EMF减少。 还公开了一种用于净化过程的排气装置，其允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。

公开(公告)号：US20120020865A1

公开(公告)日：2012-01-26

申请号：US13187282

申请日：2011-07-20

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/037 ,  C03B19/00 ,  C04B5/06

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for improving yield of an upgraded metallurgical-grade (UMG) silicon purification process is disclosed. In the UMG silicon (UMGSi) purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time, including: a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for purification processes is also disclosed, which allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 公开了一种提高冶金级（UMG）硅纯化工艺的产率的方法。 在UMG硅（UMGSi）纯化方法中，在反应室中，同时在同一装置中对其中的硅熔体进行纯化，全部或多种以下技术，包括：坩埚比方法， 添加水溶性物质，控制功率，控制真空压力，排气向上排气，通过高压气体喷射隔离，并通过喷砂除碳，从而减少硅中的氧，碳和其他杂质 熔化，满足太阳能电池的高纯硅标准，提高产量同时保持低成本，并避免随着时间的推移EMF减少。 还公开了一种用于净化过程的排气装置，其允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。

公开(公告)号：US20110198336A1

公开(公告)日：2011-08-18

申请号：US13023467

申请日：2011-02-08

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： H05B7/18 ,  F27B14/06

CPC分类号： C01B33/037 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/06 ,  F27B14/14 ,  H05B7/18

摘要： A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.

摘要翻译： 一种用于形成高质量硅材料的系统，例如多晶硅。 在具体实施方案中，熔融材料包括硅材料和杂质，例如磷类。 该系统包括具有内部区域的坩埚。 在具体实施例中，坩埚由合适的材料例如石英材料制成。 石英材料能够耐受至少1400摄氏度的温度来处理硅。 在具体实施例中，坩埚被构造成直立位置并且具有敞开的区域以暴露熔融的材料。 在具体实施例中，本系统具有能量源。 这种能量源可以是电弧加热器或其它合适的加热装置，包括可以相同或不同的多个加热装置。 电弧加热器构造在开放区域之上并且间隔开暴露的熔融材料和电弧加热器的枪口区域之间的间隙，以在暴露的熔融材料的中心区域附近形成确定的温度分布，同时保持外部 在低于坩埚的石英材料的熔点的温度下熔化的材料的区域。 在一个具体的实施方案中，系统产生熔融材料，其包含0.1ppm及更少的所得磷种，其为纯化的硅。

公开(公告)号：US20120279440A1

公开(公告)日：2012-11-08

申请号：US13541319

申请日：2012-07-03

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C30B11/02

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

摘要翻译： 用于光电应用的用于纯化硅轴承材料的方法包括将冶金硅提供到坩埚装置中。 对冶金硅进行至少一个热处理，使冶金硅从第一状态转变到第二状态，第二阶段是不超过1500摄氏度的熔融状态。 使至少第一部分杂质从熔融状态的冶金硅中除去。 熔融冶金硅从下部区域冷却到上部区域，导致下部区域固化，而第二部分杂质在液态区域中分离并积聚。 液态区域被固化，形成具有纯化区域和杂质区域的所得硅结构。 纯化区的特征在于纯度大于99.9999％。

公开(公告)号：US20120279439A1

公开(公告)日：2012-11-08

申请号：US13536919

申请日：2012-06-28

申请人： Masahiro HOSHINO ,  Cheng C. Kao

发明人： Masahiro HOSHINO ,  Cheng C. Kao

IPC分类号： C01B33/037 ,  C30B15/00 ,  C30B11/02

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 一种方法提高了升级冶金级（UMG）硅纯化工艺的产量。 在UMG硅纯化方法中，在反应室中，在同一装置中同时进行一种，全部或多种以下技术的硅熔体的纯化。 该技术包括坩埚比方法，水溶性物质的添加，功率的控制，真空压力的控制，排气的向上排气，高压气体喷射的隔离以及通过喷砂除碳，从而减少氧气 ，硅熔体中的碳和其他杂质，满足太阳能电池的高纯硅标准，提高产量，同时保持低成本，并避免随着时间的推移EMF减少。 用于净化过程的排气装置允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。

公开(公告)号：US20110200514A1

公开(公告)日：2011-08-18

申请号：US13024292

申请日：2011-02-09

申请人： Masahiro HOSHINO ,  Cheng C. Kao

发明人： Masahiro HOSHINO ,  Cheng C. Kao

IPC分类号： C01B33/037

CPC分类号： C01B33/037 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/06 ,  F27B14/14 ,  H05B7/18

摘要： The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible. The method also includes subjecting an exposed inner region of the melted material to an energy source comprising an arc heater configured above the exposed region and spaced by a gap between the exposed region and a muzzle region of the arc heater to cause formation of determined temperature profile within a vicinity of an inner region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. Preferably, the method removes one or more impurities from the melted material to form a higher purity silicon material in the crucible.

摘要翻译： 本发明提供了形成高质量硅材料（例如多晶硅）的方法。 该方法包括将原料硅转移到具有内部区域的坩埚中。 坩埚由石英或其他合适的材料制成，其能够承受至少1400摄氏度的温度。 该方法包括使坩埚中的原料硅经受热能，使原料硅熔化成液态，以在小于约1400摄氏度的温度下形成熔融材料。 优选地，熔融的材料具有由坩埚的内部区域限定的暴露区域。 该方法还包括使熔融材料的暴露的内部区域经受能量源，该能量源包括配置在暴露区域之上并由暴露区域和电弧加热器的枪口区域之间的间隙隔开的电弧加热器，以形成确定的温度曲线 在暴露的熔融材料的内部区域的附近，同时保持熔融材料的外部区域处于低于坩埚的石英材料的熔点的温度。 优选地，该方法从熔融材料中除去一种或多种杂质，以在坩埚中形成更高纯度的硅材料。

公开(公告)号：US20110114012A1

公开(公告)日：2011-05-19

申请号：US12947777

申请日：2010-11-16

申请人： Masahiro HOSHINO ,  Cheng C. Kao

发明人： Masahiro HOSHINO ,  Cheng C. Kao

IPC分类号： C30B11/02

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

摘要翻译： 用于光电应用的用于纯化硅轴承材料的方法包括将冶金硅提供到坩埚装置中。 对冶金硅进行至少一个热处理，使冶金硅从第一状态转变到第二状态，第二阶段是不超过1500摄氏度的熔融状态。 使至少第一部分杂质从熔融状态的冶金硅中除去。 熔融冶金硅从下部区域冷却到上部区域，导致下部区域固化，而第二部分杂质在液态区域中分离并积聚。 液态区域被固化，形成具有纯化区域和杂质区域的所得硅结构。 纯化区的特征在于纯度大于99.9999％。

公开(公告)号：US20090142300A1

公开(公告)日：2009-06-04

申请号：US11985251

申请日：2007-11-14

申请人： Cheng C. Kao ,  Ranjith Kumar Tharachaparamba

发明人： Cheng C. Kao ,  Ranjith Kumar Tharachaparamba

IPC分类号： A61K38/21 ,  C07K14/435 ,  A61K39/395 ,  A61K31/7048 ,  C12Q1/68 ,  A61P29/00 ,  C12N5/00 ,  A61K31/7052 ,  A61K38/14

CPC分类号： A61K38/177 ,  A61K31/7048 ,  A61K31/7052 ,  A61K45/06 ,  A61K2300/00

摘要： The invention relates to compositions and methods related to Toll-like receptor (TLR) polypeptides. In some embodiments, the invention relates to managing TLR3 related diseases. In further embodiments, the invention relates to methods of preventing and treating inflammation. In some embodiments, the invention relates to antagonists of TLR3, to amino acid sequences that act as dominant negative molecules, and to nucleic acid sequences that encode said amino acid sequences. In additional embodiments, the invention relates to the manipulation of biological materials to evaluate TLR3 activity.

摘要翻译： 本发明涉及与Toll样受体（TLR）多肽相关的组合物和方法。 在一些实施方案中，本发明涉及治疗TLR3相关疾病。 在进一步的实施方案中，本发明涉及预防和治疗炎症的方法。 在一些实施方案中，本发明涉及TLR3的拮抗剂，作为主要负分子的氨基酸序列，以及编码所述氨基酸序列的核酸序列。 在另外的实施方案中，本发明涉及用于评估TLR3活性的生物材料的操作。

公开(公告)号：US08673073B2

公开(公告)日：2014-03-18

申请号：US13541319

申请日：2012-07-03

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C30B28/04

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

摘要翻译： 用于光电应用的用于纯化硅轴承材料的方法包括将冶金硅提供到坩埚装置中。 对冶金硅进行至少一个热处理，使冶金硅从第一状态转变到第二状态，第二阶段是不超过1500摄氏度的熔融状态。 使至少第一部分杂质从熔融状态的冶金硅中除去。 熔融冶金硅从下部区域冷却到上部区域，导致下部区域固化，而第二部分杂质在液态区域中分离并积聚。 液态区域被固化，形成具有纯化区域和杂质区域的所得硅结构。 纯化区的特征在于纯度大于99.9999％。