公开(公告)号：US06621167B1

公开(公告)日：2003-09-16

申请号：US10064671

申请日：2002-09-23

Applicant: Chien-Chung Lin ,  Cheng-Yu Hung ,  Chien-Mei Wang ,  Chih-Hung Chen

Inventor： Chien-Chung Lin ,  Cheng-Yu Hung ,  Chien-Mei Wang ,  Chih-Hung Chen

IPC: H01L2940

CPC classification number: H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal interconnect structure generally includes a lower-layer metal wiring, an upper-layer metal wiring partially overlapping with the lower-layer metal wiring to define a via region thereof, a dielectric layer disposed between the lower-layer metal wiring and the upper-layer metal wiring, a plurality of via plugs arranged in the dielectric layer within a first area of the via region for electrically connecting the lower-layer metal wiring and the upper-layer metal wiring, and a plurality of first dielectric structures embedded in the upper-layer metal wiring within a second area of the via region, in which the first area does not overlap with the second area.

Abstract translation: 金属互连结构通常包括下层金属布线，与下层金属布线部分重叠的上层金属布线以限定其通孔区域，设置在下层金属布线和上层金属布线之间的介电层， 层状金属布线，布置在电介质层内的多个通孔塞，用于电连接下层金属布线和上层金属布线的通孔区域的第一区域，以及嵌入上层金属布线的多个第一电介质结构 在所述通孔区域的第二区域内，所述第一区域与所述第二区域不重叠。

公开(公告)号：US07067917B2

公开(公告)日：2006-06-27

申请号：US10337292

申请日：2003-01-07

Applicant: Fu-Tai Liou ,  Cheng-Yu Hung ,  Tri-Rung Yew

Inventor： Fu-Tai Liou ,  Cheng-Yu Hung ,  Tri-Rung Yew

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76846 ,  C23C14/027 ,  C23C14/0641 ,  C23C16/029 ,  C23C16/34 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76864 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/26 ,  H01L2924/00

Abstract: The present invention is directed to a structure of a gradient barrier layer. The gradient barrier with a composite structure of metal/metal salt of different composition/metal such as Ta/TaxN1−x/TaN/TaxN1−x/Ta (tantalum/tantalumx nitride1−x/tantalum nitride/tantalumx nitride1−x/tantalum) is proposed to replace the conventional barrier for copper metallization. The gradient barrier can be formed in a chemical vapor deposition (CVD) process or a multi-target physical vapor deposition (PVD) process. For CVD process, using the characteristics of well-controlled reaction gas injection, the ratio of tantalum (Ta) and nitrogen (N) can be modulated gradually to form the gradient barrier. For the multi-target PVD process, the gradient barrier is formed by depositing multi-layers of different composition TaxN1−x films. After subsequent thermal cycle processes such as metal alloy, the inter-layer diffusion occurs and a more smooth distribution of Ta and N is achieved for the gradient barrier. The advantages of forming the gradient barrier include a well-controlled process, a strong adhesion between via and landing metal, more uniform step coverage, and less brittle to reduce crack.

Abstract translation: 本发明涉及梯度阻挡层的结构。 具有不同成分/金属的金属/金属盐的复合结构的梯度屏障，例如Ta / Ta x N 1-x / TaN / Ta x x 1 / x 1 / x 3/1 / x 2/1 / x 3 / 提出了替代传统的铜金属化屏障的方法。 梯度屏障可以在化学气相沉积（CVD）工艺或多目标物理气相沉积（PVD）工艺中形成。 对于CVD工艺，使用良好控制的反应气体注入特性，可以逐渐调节钽（Ta）和氮（N）的比例，形成梯度屏障。 对于多目标PVD工艺，通过沉积多层不同组成的Ta x N 1 x-x膜形成梯度屏障。 在随后的热循环过程如金属合金之后，发生层间扩散，并且对梯度屏障实现了更平稳的Ta和N分布。 形成梯度屏障的优点包括良好控制的工艺，通孔和着陆金属之间的牢固粘附，更均匀的台阶覆盖，并且较不易碎以减少裂纹。