利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

272 条记录 (耗时 0.024 秒)

    EVAPORATION APPARATUS FOR DEPOSITING MATERIAL ON A FLEXIBLE SUBSTRATE AND METHOD THEREFORE
    1.
    发明申请
    EVAPORATION APPARATUS FOR DEPOSITING MATERIAL ON A FLEXIBLE SUBSTRATE AND METHOD THEREFORE 审中-公开

    公开(公告)号：US20190246504A1

    公开(公告)日：2019-08-08

    申请号：US16318812

    申请日：2016-08-01

    申请人： Roland TRASSL ,  Applied Materials, Inc.

    发明人： Roland TRASSL

    IPC分类号： H05K3/14 ,  H05K1/11 ,  C23C14/00 ,  C23C14/02 ,  C23C14/56

    CPC分类号： H05K3/146 ,  C23C14/0021 ,  C23C14/027 ,  C23C14/562 ,  H05K1/118

    摘要： An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

    TixSi1-xN LAYERS AND THEIR PRODUCTION
    7.
    发明申请
    TixSi1-xN LAYERS AND THEIR PRODUCTION 有权
    TixSi1-xN层及其生产

    公开(公告)号：US20160177436A1

    公开(公告)日：2016-06-23

    申请号：US14902826

    申请日：2014-07-01

    申请人： OERLIKON SURFACE SOLUTIONS AG, TRÜBBACH

    发明人： Denis Kurapov ,  Siegfried Krassnitzer

    IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/06

    CPC分类号： C23C14/3407 ,  C23C14/027 ,  C23C14/0641 ,  C23C14/0682 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/352

    摘要： A workpiece having a coating, said coating comprising at least one TixSi1-xN layer, characterized in that x ≦0.85 and the TixSi1-xN layer contains nanocrystals, the nanocrystals present having an average grain size of not more than 15 nm and having a (200) texture. The invention also relates to a process for producing the aforementioned layer, characterized in that the layer is produced using a sputtering process, in which current densities of greater than 0.2 A/cm2 arise on the target surface of the sputtering target, and the target is a TixSi1-xN target, where x ≦0.85, An intermediate layer containing TiAlN or CrAlN is preferably provided between the TixSi1-xN layer and the substrate body of the workpiece.

    摘要翻译： 一种具有涂层的工件，所述涂层包括至少一个TixSi1-xN层，其特征在于，x和n1; 0.85和TixSi1-xN层含有纳米晶体，所述纳米晶体的平均晶粒尺寸不大于15nm，并具有 （200）纹理。 本发明还涉及上述层的制造方法，其特征在于，使用溅射法制造该层，其中在溅射靶的靶表面上出现大于0.2A / cm 2的电流密度，靶为 TixSi1-xN靶，其中x

    Hard film sliding part and method of manufacturing the sliding part
    8.
    发明授权
    Hard film sliding part and method of manufacturing the sliding part 有权
    硬膜滑动部件和制造滑动部件的方法

    公开(公告)号：US09034461B2

    公开(公告)日：2015-05-19

    申请号：US13765254

    申请日：2013-02-12

    申请人： HITACHI, LTD.

    发明人： Itto Sugimoto

    IPC分类号： B32B3/30 ,  B32B7/02 ,  B23B3/30 ,  C23C14/35 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34

    CPC分类号： B23B3/30 ,  B32B3/30 ,  C23C14/027 ,  C23C14/0635 ,  C23C14/0664 ,  C23C14/345 ,  C23C14/35 ,  C23C14/352 ,  Y10T428/24537 ,  Y10T428/2457 ,  Y10T428/24628 ,  Y10T428/24942 ,  Y10T428/24983

    摘要： Disclosed herein is a hard film containing boron and carbon, wherein the hard film includes a plurality of concave portions and a plurality of convex portions formed on a surface of the hard film, and wherein carbon concentration in the concave portion is higher than that in the convex portion and boron concentration in the convex portion is higher than that in the concave portion. Further, disclosed herein is a method of manufacturing a sliding part having a hard film containing boron and carbon disposed over a substrate; wherein the hard film is manufactured by using at least one of an unbalanced magnetron sputtering method or a high power pulsed magnetron sputtering method, both sputtering methods using a target containing at least one of elements of silicon, chromium, titanium, and tungsten and a boron carbide target.

    摘要翻译： 本发明公开了含有硼和碳的硬膜，其中硬膜包括多个凹部和形成在硬膜表面上的多个凸部，其中凹部中的碳浓度高于 凸部的凸部和硼浓度比凹部高。 此外，本文公开了一种制造具有设置在基板上的含有硼和碳的硬膜的滑动部件的方法; 其中通过使用不平衡磁控溅射法或高功率脉冲磁控溅射法中的至少一种制造硬膜，使用包含硅，铬，钛和钨的元素中的至少一种的靶的溅射方法和硼 碳化物靶。

    Methods for Depositing Silicon Nitride Films
    9.
    发明申请
    Methods for Depositing Silicon Nitride Films 有权
    沉积氮化硅薄膜的方法

    公开(公告)号：US20150099375A1

    公开(公告)日：2015-04-09

    申请号：US14498044

    申请日：2014-09-26

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Chandra Haripin ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Moo-Sung Kim ,  Kirk Scott Cuthill ,  Mark Leonard O'Neill

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0217 ,  C07F7/10 ,  C23C14/027 ,  C23C14/548 ,  C23C16/18 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/45553 ,  C23C28/42 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

    摘要： Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

    摘要翻译： 这里描述了形成氮化硅膜的方法。 在一个方面，提供一种形成氮化硅膜的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种本文所述的至少一种具有至少一个SiH 3基团的有机氨基硅烷，其中所述至少一种有机氨基硅烷在所述基材的至少一部分表面上反应以提供化学吸附层; 用吹扫气净化反应器; 将包含氮气和惰性气体的等离子体引入反应器中以与化学吸附层的至少一部分反应并提供至少一个反应性位点，其中以约0.01至约1.5W / cm 2的功率密度产生等离子体。

    Method of applying a thermal barrier coating
    10.
    发明授权
    Method of applying a thermal barrier coating 有权
    施加热障涂层的方法

    公开(公告)号：US08986792B2

    公开(公告)日：2015-03-24

    申请号：US13773687

    申请日：2013-02-22

    申请人： Forschungszentrum Jülich GmbH ,  Sulzer Metco AG

    发明人： Andreas Hospach ,  Robert Vassen ,  Georg Mauer ,  Karl-Heinz Rauwald ,  Detlev Stöver ,  Konstantin von Niessen ,  Malko Gindrat

    IPC分类号： C23C4/10 ,  C23C4/12 ,  C23C14/02 ,  C23C14/08 ,  C23C14/22 ,  C23C28/00 ,  B01D53/22

    CPC分类号： C23C4/127 ,  B01D53/22 ,  C23C4/134 ,  C23C14/027 ,  C23C14/083 ,  C23C14/228 ,  C23C28/30 ,  Y10T428/24174

    摘要： To apply a thermal barrier coating (10), a plasma jet (5) is generated by a plasma torch in a work chamber (2) and is directed to the surface of a substrate (3) introduced into the work chamber, and a ceramic coating material is applied to the substrate surface by means of PS-PVD, wherein the coating material is injected into the plasma jet as a powder and is partly or completely vaporized there. On applying the thermal barrier coating, in a first workstep the feed rate of the injected powder is set so that a large part of the injected powder vaporizes, wherein the coating material condenses from the vapor phase on the substrate surface and forms mixed phases with the material of the substrate surface. In a second workstep, the feed rate of the injected powder it increased by at least a factor of 5, whereby the portion of the powder which vaporizes is reduced and the coating material is deposited in the form of elongate columns which form an anisotropic microstructure and which are aligned substantially perpendicular to the substrate surface.

    摘要翻译： 为了施加热障涂层（10），通过工作室（2）中的等离子体焰炬产生等离子体射流（5），并且被引导到被引入到工作室中的衬底（3）的表面，并且陶瓷 通过PS-PVD将涂料施加到基材表面，其中将涂料作为粉末注入等离子体射流中，并在其中部分或完全蒸发。 在施加热障涂层时，在第一工作步骤中，注入的粉末的进料速率被设定为使得大部分注入的粉末蒸发，其中涂层材料从衬底表面上的气相冷凝并形成混合相， 基材表面的材料。 在第二个工作步骤中，注入的粉末的进料速率增加至少5倍，从而减少蒸发的部分粉末，并且以形成各向异性微结构的细长柱的形式沉积涂层材料， 其基本上垂直于衬底表面对准。