IN-SITU ION SOURCE CLEANING FOR PARTIAL PRESSURE ANALYZERS USED IN PROCESS MONITORING
    1.
    发明申请
    IN-SITU ION SOURCE CLEANING FOR PARTIAL PRESSURE ANALYZERS USED IN PROCESS MONITORING 审中-公开
    在过程监控中使用的部分压力分析仪的现场离子源清洁

    公开(公告)号:US20090014644A1

    公开(公告)日:2009-01-15

    申请号:US12170810

    申请日:2008-07-10

    IPC分类号: B01D59/44

    CPC分类号: H01J49/145

    摘要: An ion source apparatus for partial pressure analyzers and in-situ cleaning method thereof based on inducing a hollow cathode discharge (HCD) inside the ion source. The HCD is formed by applying a high negative voltage to one or more parts of the ion source, including the anode electrode, the lens focus plate and at least one other lens or other form of plate, such as a total pressure collector plate.

    摘要翻译: 一种用于分压分析仪的离子源装置及其基于在离子源内引入空心阴极放电(HCD)的原位清洗方法。 通过向离子源的一个或多个部分施加高负电压而形成HCD,所述离子源包括阳极电极,透镜聚焦板以及至少一个其它透镜或其它形式的板,例如总压力集电板。

    Inter-process sensing of wafer outcome
    3.
    发明授权
    Inter-process sensing of wafer outcome 有权
    晶圆结果的过程间感测

    公开(公告)号:US07257494B2

    公开(公告)日:2007-08-14

    申请号:US11126471

    申请日:2005-05-11

    IPC分类号: G06F19/00 G01L21/66

    CPC分类号: H01L21/67253

    摘要: A method of monitoring a microelectronic manufacturing process includes the implementation of a monitoring sensor that is configured to operate in an inter-process mode. During an inter-process mode, a first valve is opened in order to initiate transfer of a processing substrate between at least one processing chamber and a transfer chamber. The monitoring sensor is programmed to monitor the interior of the at least one processing chamber only after the first valve is opened.

    摘要翻译: 监测微电子制造过程的方法包括实施监控传感器,其被配置为在处理间模式下操作。 在处理间模式期间,打开第一阀以启动处理基板在至少一个处理室和转移室之间的转移。 监控传感器被编程为仅在第一阀打开之后监视至少一个处理室的内部。