Yellow light afterglow material and preparation method thereof as well as LED illuminating device using same
    1.
    发明授权
    Yellow light afterglow material and preparation method thereof as well as LED illuminating device using same 有权
    黄光余辉材料及其制备方法以及使用其的LED照明装置

    公开(公告)号:US09045689B2

    公开(公告)日:2015-06-02

    申请号:US13497129

    申请日:2009-11-09

    摘要: The invention relates to a yellow light afterglow material and a preparation method thereof as well as an LED illuminating device using the same. The yellow light afterglow material comprises the chemical formula of aY2O3.bAl2O3.cSiO2:mCe.nB.xNa.yP, where a, b, c, m, n, x and y are coefficients, and a is not less than 1 but not more than 2, b is not less than 2 but not more than 3, c is not less than 0.001 but not more than 1, m is not less than 0.0001 but not more than 0.6, n is not less than 0.0001 but not more than 0.5, x is not less than 0.0001 but not more than 0.2, and y is not less than 0.0001 but not more than 0.5; wherein Y, Al and Si are substrate elements, and Ce, B, Na and P are activators. The yellow light afterglow material is prepared by the following steps: weighing oxides of elements or materials which can generate oxides at high temperature by molar ratio as raw materials, evenly mixing and then sintering the raw materials at 1200-1700° in a reducing atmosphere.

    摘要翻译: 本发明涉及一种黄光余辉材料及其制备方法以及使用其的LED照明装置。 黄光余辉材料包括aY2O3.bAl2O3.cSiO2:mCe.nB.xNa.yP的化学式:其中a,b,c,m,n,x和y是系数,a不小于1但不是 大于2,b不小于2,但不大于3,c不小于0.001,但不大于1,m不小于0.0001,但不大于0.6,n不小于0.0001,但不大于 0.5,x不小于0.0001但不大于0.2,y不小于0.0001但不大于0.5; 其中Y,Al和Si是底物,Ce,B,Na和P是活化剂。 黄光余辉材料通过以下步骤制备:将以高摩尔比生成氧化物的元素或材料的氧化物称重为原料,均匀混合,然后在还原气氛中在1200-1700℃下烧结原料。

    AC WHITE LED DEVICE
    2.
    发明申请
    AC WHITE LED DEVICE 有权
    交流白光LED装置

    公开(公告)号:US20130221870A1

    公开(公告)日:2013-08-29

    申请号:US13883832

    申请日:2011-03-01

    IPC分类号: H05B33/08

    摘要: An Alternate Current (AC) white Light-Emitting Diode (LED) device is provided, which belongs to the technical field of white LED manufacturing. The problem to be solved by the present invention is to low-costly overcome a series of deficiencies such as the stroboflash of an AC driven LED, and the heat dissipation difficulty caused by an integrated packaging of multiple LEDs. A white LED unit includes an LED chip and a light emitting material that can emit light when being excited by the LED chip. The luminous lifetime of the light emitting material is 1-100 ms. The LED chip only comprises one PN junction. The light emitted by the LED chip is mixed with the light emitted by the light emitting material to form white light. The white LED unit is driven by AC with a frequency not more than 100 Hz. The white LED device of prevent invention uses the single PN junction chip, rather than the prior integrated packaged AC multi-LED chip.

    摘要翻译: 提供交流(AC)白光发光二极管(LED)装置,属于白光LED制造技术领域。 本发明要解决的问题是低成本地克服了诸如AC驱动LED的闪光灯等一系列缺陷以及由多个LED的集成封装引起的散热困难。 白色LED单元包括LED芯片和当被LED芯片激发时可以发光的发光材料。 发光材料的发光寿命为1-100ms。 LED芯片仅包括一个PN结。 由LED芯片发出的光与由发光材料发射的光混合,形成白光。 白色LED单元由AC不超过100 Hz的频率驱动。 防止发明的白色LED装置使用单个PN结芯片,而不是现有的集成封装的交流多LED芯片。

    White LED device having LED chips directly driven by alternating current
    3.
    发明授权
    White LED device having LED chips directly driven by alternating current 有权
    白色LED器件,具有直接由交流电驱动的LED芯片

    公开(公告)号:US09185761B2

    公开(公告)日:2015-11-10

    申请号:US13883832

    申请日:2011-03-01

    摘要: An Alternate Current (AC) white Light-Emitting Diode (LED) device is provided, which belongs to the technical field of white LED manufacturing. The problem to be solved by the present invention is to low-costly overcome a series of deficiencies such as the stroboflash of an AC driven LED, and the heat dissipation difficulty caused by an integrated packaging of multiple LEDs. A white LED unit includes an LED chip and a light emitting material that can emit light when being excited by the LED chip. The luminous lifetime of the light emitting material is 1-100 ms. The LED chip only comprises one PN junction. The light emitted by the LED chip is mixed with the light emitted by the light emitting material to form white light. The white LED unit is driven by AC with a frequency not more than 100 Hz. The white LED device of prevent invention uses the single PN junction chip, rather than the prior integrated packaged AC multi-LED chip.

    摘要翻译: 提供交流(AC)白光发光二极管(LED)装置,属于白光LED制造技术领域。 本发明要解决的问题是低成本地克服了诸如AC驱动LED的闪光灯等一系列缺陷以及由多个LED的集成封装引起的散热困难。 白色LED单元包括LED芯片和当被LED芯片激发时可以发光的发光材料。 发光材料的发光寿命为1-100ms。 LED芯片仅包括一个PN结。 由LED芯片发出的光与由发光材料发射的光混合,形成白光。 白色LED单元由AC不超过100 Hz的频率驱动。 防止发明的白色LED装置使用单个PN结芯片,而不是现有的集成封装的交流多LED芯片。

    YELLOW LIGHT AFTERGLOW MATERIAL AND PREPARATION METHOD THEREOF AS WELL AS LED ILLUMINATING DEVICE USING SAME
    4.
    发明申请
    YELLOW LIGHT AFTERGLOW MATERIAL AND PREPARATION METHOD THEREOF AS WELL AS LED ILLUMINATING DEVICE USING SAME 有权
    黄光后材料及其制备方法以及使用其的LED照明装置

    公开(公告)号:US20120181566A1

    公开(公告)日:2012-07-19

    申请号:US13497129

    申请日:2009-11-09

    IPC分类号: H01L33/50 C09K11/81

    摘要: The invention relates to a yellow light afterglow material and a preparation method thereof as well as an LED illuminating device using the same. The yellow light afterglow material comprises the chemical formula of aY2O3.bAl2O3.cSiO2:mCe.nB.xNa.yP, where a, b, c, m, n, x and y are coefficients, and a is not less than 1 but not more than 2, b is not less than 2 but not more than 3, c is not less than 0.001 but not more than 1, m is not less than 0.0001 but not more than 0.6, n is not less than 0.0001 but not more than 0.5, x is not less than 0.0001 but not more than 0.2, and y is not less than 0.0001 but not more than 0.5; wherein Y, Al and Si are substrate elements, and Ce, B, Na and P are activators. The yellow light afterglow material is prepared by the following steps: weighing oxides of elements or materials which can generate oxides at high temperature by molar ratio as raw materials, evenly mixing and then sintering the raw materials at 1200-1700° in a reducing atmosphere.

    摘要翻译: 本发明涉及一种黄光余辉材料及其制备方法以及使用其的LED照明装置。 黄光余辉材料包括aY2O3.bAl2O3.cSiO2:mCe.nB.xNa.yP的化学式:其中a,b,c,m,n,x和y是系数,a不小于1但不是 大于2,b不小于2,但不大于3,c不小于0.001,但不大于1,m不小于0.0001,但不大于0.6,n不小于0.0001,但不大于 0.5,x不小于0.0001但不大于0.2,y不小于0.0001但不大于0.5; 其中Y,Al和Si是底物,Ce,B,Na和P是活化剂。 黄光余辉材料通过以下步骤制备:将以高摩尔比生成氧化物的元素或材料的氧化物称重为原料,均匀混合,然后在还原气氛中在1200-1700℃下烧结原料。