公开(公告)号：US20070224780A1

公开(公告)日：2007-09-27

申请号：US11466387

申请日：2006-08-22

申请人： Fu Tang CHU ,  Chi Yuam CHUNG

发明人： Fu Tang CHU ,  Chi Yuam CHUNG

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L24/27 ,  H01L2224/274

摘要： A method for dicing a wafer is provided. A layer of adhesive material is applied to the back surface of the wafer so as to provide a sufficient mechanical strength for the wafer during dicing process thereby preventing the dice diced from the wafer from undue chipping on the back surfaces and the side surfaces.

摘要翻译： 提供了一种用于切割晶片的方法。 将一层粘合剂材料施加到晶片的背面，以便在切割工艺期间为晶片提供足够的机械强度，从而防止从晶片切下的芯片在背表面和侧表面上不适当地破碎。

公开(公告)号：US20080045124A1

公开(公告)日：2008-02-21

申请号：US11785710

申请日：2007-04-19

申请人： Fu-Tang Chu ,  Chi-Yuam Chung ,  Ji-Ping Teng

发明人： Fu-Tang Chu ,  Chi-Yuam Chung ,  Ji-Ping Teng

IPC分类号： B24B1/00

CPC分类号： B24B7/228 ,  B24B1/00 ,  B28D5/00 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： The present invention relates to a sawing method for a wafer. The sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice. Whereby, the problems of die cracking, die scratching, die contamination and peeling of the surface of the sawing lines can be avoided.

摘要翻译： 本发明涉及一种晶片的锯切方法。 本发明的锯切方法包括：（a）提供晶片，所述晶片具有活性表面和后表面，所述活性表面具有多个锯切线; （b）在活动表面和锯线上涂覆保护层; （c）将研磨带贴在保护层的表面上; （d）研磨晶片的背面以使晶片变薄; （e）去除研磨胶带; 和（f）锯切晶片以形成多个骰子。 由此，可以避免模具开裂，模具刮伤，模具污染和锯切面的剥离等问题。

公开(公告)号：US20080176360A1

公开(公告)日：2008-07-24

申请号：US12017931

申请日：2008-01-22

申请人： Fu Tang CHU ,  Chi Yuam CHUNG

发明人： Fu Tang CHU ,  Chi Yuam CHUNG

IPC分类号： H01L21/50 ,  H01L21/78

CPC分类号： H01L21/78

摘要： A method for sawing a wafer includes the following steps. A wafer which has an active surface, a back surface and a plurality of longitudinal and transverse sawing lines is provided, wherein the sawing lines are located on the active surface so as to define a plurality of dies. A multiple tape is attached on the active surface of the wafer, wherein the multiple tape includes a first tape and a second tape, the second tape is located between the first tape and the active surface of the wafer, and the second tape is transparent. The back surface of the wafer is grinded. The first tape is removed. Finally, the wafer including the second tape is sawn along the sawing lines so as to separate the dies from one another.

摘要翻译： 锯切晶片的方法包括以下步骤。 提供具有活性表面，后表面和多个纵向和横向锯割线的晶片，其中锯切线位于有源表面上以限定多个管芯。 多个带附着在晶片的有源表面上，其中多个带包括第一带和第二带，第二带位于第一带和晶片的有源表面之间，第二带是透明的。 研磨晶片的背面。 第一个磁带被删除。 最后，包括第二带的晶片沿着锯线被锯切，以将模具彼此分开。

公开(公告)号：US07749866B2

公开(公告)日：2010-07-06

申请号：US12017931

申请日：2008-01-22

申请人： Fu Tang Chu ,  Chi Yuam Chung

发明人： Fu Tang Chu ,  Chi Yuam Chung

IPC分类号： H01L21/301

CPC分类号： H01L21/78

摘要： A method for sawing a wafer includes the following steps. A wafer which has an active surface, a back surface and a plurality of longitudinal and transverse sawing lines is provided, wherein the sawing lines are located on the active surface so as to define a plurality of dies. A multiple-type tape is attached on the active surface of the wafer, wherein the multiple-type tape includes a first tape and a second tape, the second tape is located between the first tape and the active surface of the wafer, and the second tape is transparent. The back surface of the wafer is grinded. The first tape is removed. Finally, the wafer including the second tape is sawn along the sawing lines so as to separate the dies from one another.

摘要翻译： 锯切晶片的方法包括以下步骤。 提供具有活性表面，后表面和多个纵向和横向锯割线的晶片，其中锯切线位于有源表面上以限定多个管芯。 多晶带安装在晶片的有源表面上，其中多型带包括第一带和第二带，第二带位于第一带和晶片的有源表面之间，第二带 磁带是透明的。 研磨晶片的背面。 第一个磁带被删除。 最后，包括第二带的晶片沿着锯线被锯切，以将模具彼此分开。