公开(公告)号：US20110251082A1

公开(公告)日：2011-10-13

申请号：US12756927

申请日：2010-04-08

Applicant: Hong-Lin Chan ,  Hsiu-Chuan Chou ,  Tzu-Chia Lai ,  Yi-Wen Chen ,  Ping-Chiang Lyu ,  Tian -Ren Lee ,  Hsin-Tsu Chan ,  Hsin-Hsin Shen ,  Wei-Ta Lee ,  Szu-Ting Lin ,  Ying-Chieh Lu ,  Chieh-Lin Wu

Inventor： Hong-Lin Chan ,  Hsiu-Chuan Chou ,  Tzu-Chia Lai ,  Yi-Wen Chen ,  Ping-Chiang Lyu ,  Tian -Ren Lee ,  Hsin-Tsu Chan ,  Hsin-Hsin Shen ,  Wei-Ta Lee ,  Szu-Ting Lin ,  Ying-Chieh Lu ,  Chieh-Lin Wu

IPC: C40B30/04 ,  C40B30/00 ,  C40B40/10

CPC classification number: G01N33/57415 ,  G01N2800/50 ,  G01N2800/52 ,  G01N2800/56

Abstract: The present invention uses 2-dimensional differential gel electrophoresisgel (2D-DIGE) and mass spetrum techniques to identify breast cancer biomarkers in transformed breast cells. In summary, the present invention identifies numerous putative breast cancer markers from various stages of breast cancer. The results of the invention aids in developing proteins identified as useful diagnostic and therapeutic candidates on breast cancer research.

Abstract translation: 本发明使用二维差示凝胶电泳凝胶（2D-DIGE）和大量的突出技术来鉴定转化的乳腺细胞中的乳腺癌生物标志物。 总之，本发明从乳腺癌的各个阶段鉴定出许多推定的乳腺癌标志物。 本发明的结果有助于开发鉴定为乳腺癌研究中有用的诊断和治疗候选物的蛋白质。

公开(公告)号：US20120205744A1

公开(公告)日：2012-08-16

申请号：US13370395

申请日：2012-02-10

Applicant: Kenneth K. O ,  Chieh-Lin Wu

Inventor： Kenneth K. O ,  Chieh-Lin Wu

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/265

CPC classification number: H01L21/266 ,  H01L29/66772 ,  H01L29/78615

Abstract: Embodiments of the invention provide SOI body-contacted transistors that can be used for high frequency analog and digital circuits. In accordance with certain embodiments of the invention, the SOI transistor gate can have an “I” shape, similar to the shape of the gate of a floating body SOI transistor. However, a body region is provided that extends perpendicular to the width direction of the gate and is contacted at an end of the extended body region. To form such a body contact structure, a source/drain implant block mask and silicide block mask are used during the formation of the source/drain regions. The source/drain implant block mask and silicide block mask can be formed on the same region, but the silicide block mask can allow for the body contact portion at the end of the extended body region to be silicided during the siliciding of the source/drain regions.

Abstract translation: 本发明的实施例提供可用于高频模拟和数字电路的SOI体接触晶体管。 根据本发明的某些实施例，SOI晶体管栅极可以具有类似于浮体SOI晶体管的栅极的形状的“I”形状。 然而，提供了一个主体区域，其垂直于栅极的宽度方向延伸并在延伸体区域的一端接触。 为了形成这种体接触结构，在源极/漏极区域的形成期间使用源/漏注入块掩模和硅化物掩模掩模。 源极/漏极注入块掩模和硅化物掩模掩模可以形成在相同的区域上，但是硅化物掩模掩模可以允许在扩散体区域的末端处的体接触部分在源极/漏极的硅化期间被硅化 地区。