公开(公告)号：US20110121406A1

公开(公告)日：2011-05-26

申请号：US12871655

申请日：2010-08-30

Applicant: Tsung-Lin Lee ,  Chih Cheih Yeh ,  Chang-Yun Chang ,  Feng Yuan

Inventor： Tsung-Lin Lee ,  Chih Cheih Yeh ,  Chang-Yun Chang ,  Feng Yuan

IPC: H01L27/088 ,  H01L21/28

CPC classification number: H01L21/823431 ,  H01L21/266 ,  H01L21/76224 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.

Abstract translation: 集成电路结构包括包括第一器件区域中的第一部分和第二器件区域中的第二部分的半导体衬底。 第一半导体鳍片在半导体衬底之上并且具有第一鳍片高度。 第二半导体鳍片在半导体衬底之上并且具有第二鳍片高度。 第一鳍高度大于第二翅片高度。