公开(公告)号：US07067178B2

公开(公告)日：2006-06-27

申请号：US10478866

申请日：2002-05-24

申请人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

发明人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

IPC分类号： B05D1/032 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/68757 ,  C23C4/02 ,  C23C4/18 ,  H01L21/6833 ,  Y10T279/23

摘要： The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

摘要翻译： 通过陶瓷热喷涂法形成等离子体处理装置的基座（10）或基板台的静电卡盘（12）。 陶瓷喷涂层（12A）用甲基丙烯酸树脂（12D）密封。 将主要含有甲基丙烯酸甲酯的树脂原料涂覆并浸渍在陶瓷喷涂层中，然后固化，从而在陶瓷喷涂层中的陶瓷颗粒与甲基丙烯酸树脂之间填充孔隙。 甲基丙烯酸树脂原料溶液在固化时不产生孔隙，可以完成孔密封。

公开(公告)号：US20060115600A1

公开(公告)日：2006-06-01

申请号：US11330081

申请日：2006-01-12

申请人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

发明人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

IPC分类号： B05D1/32 ,  C23C16/00

CPC分类号： H01L21/68757 ,  C23C4/02 ,  C23C4/18 ,  H01L21/6833 ,  Y10T279/23

摘要： The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

公开(公告)号：US07544393B2

公开(公告)日：2009-06-09

申请号：US11330081

申请日：2006-01-12

申请人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

发明人： Shinji Muto ,  Chihiro Taguchi ,  Nobuyuki Okayama

IPC分类号： B05D1/32 ,  C23C4/10 ,  B05C13/00 ,  H01L21/683 ,  B23B31/28

CPC分类号： H01L21/68757 ,  C23C4/02 ,  C23C4/18 ,  H01L21/6833 ,  Y10T279/23

摘要： The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

摘要翻译： 等离子体处理装置的基座或衬底台的静电吸盘由陶瓷热喷涂法形成。 热喷涂陶瓷层被甲基丙烯酸树脂密封。 将主要含有甲基丙烯酸甲酯的树脂原料涂覆并浸渍到热喷涂陶瓷层中，然后固化，从而在喷涂陶瓷层中的陶瓷颗粒与甲基丙烯酸树脂之间填充孔隙。 甲基丙烯酸树脂原料溶液在固化时不产生孔隙，可以完成孔密封。

公开(公告)号：US06492612B1

公开(公告)日：2002-12-10

申请号：US09868645

申请日：2001-06-28

申请人： Chihiro Taguchi ,  Ryo Nonaka

发明人： Chihiro Taguchi ,  Ryo Nonaka

IPC分类号： B23K1000

CPC分类号： H01L21/6833 ,  H01L21/67069

摘要： The present invention is constituted of a lower electrode structure (1) comprising a base table (2) formed of a conductive material, an electrostatic adsorption member (3) formed on the base table (2) and having a dielectric layer (4) on which the substrate to be mounted and within which an electrode (5) electrically isolated from the base table (2) is housed, first wiring (7) having an end connected to the electrode (3) of the electrostatic adsorption member, a direct-current source (8) connected to the other end of the first wiring (7), second wiring (10) having an end connected to the base table (2), a high frequency source (11) connected to the other end of the second wiring (10), a third wiring (14) for connecting the first wiring (7) and the second wiring (10), and a capacitor (13) formed on the third wiring (14). Plasma processing is performed by disposing the lower electrode structure (1) in the chamber (21).

摘要翻译： 本发明由下列电极结构（1）构成，该下电极结构（1）包括由导电材料形成的基台（2），形成在基台（2）上的电介质层（4）上的静电吸附构件 其中容纳有要与基座（2）电隔离的电极（5）的基板，其中具有连接到静电吸附部件的电极（3）的端部的第一布线（7） 连接到第一布线（7）的另一端的电流源（8），具有连接到基台（2）的端部的第二布线（10），连接到第二布线（7）的另一端的高频源 布线（10），用于连接第一布线（7）和第二布线（10）的第三布线（14）和形成在第三布线（14）上的电容器（13）。 通过将下部电极结构（1）设置在室（21）中来进行等离子体处理。