公开(公告)号：US07002626B2

公开(公告)日：2006-02-21

申请号：US09999232

申请日：2001-10-26

申请人： Bedabrata Pain ,  Chris Wrigley ,  Guang Yang ,  Orly Yadid-Pecht

发明人： Bedabrata Pain ,  Chris Wrigley ,  Guang Yang ,  Orly Yadid-Pecht

IPC分类号： H04N5/217

CPC分类号： H04N5/3594 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14656 ,  H04N5/3532 ,  H04N5/374

摘要： An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

公开(公告)号：US06326230B1

公开(公告)日：2001-12-04

申请号：US09479379

申请日：2000-01-05

申请人： Bedabrata Pain ,  Chris Wrigley ,  Guang Yang ,  Orly Yadid-Pecht

发明人： Bedabrata Pain ,  Chris Wrigley ,  Guang Yang ,  Orly Yadid-Pecht

IPC分类号： H01L2100

CPC分类号： H04N5/3594 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14656 ,  H04N5/3532 ,  H04N5/374

摘要： An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

摘要翻译： 图像传感器包括形成在半导体衬底上的像素。 每个像素包括半导体衬底中的光活性区域，感测节点和电源节点。 第一电极设置在半导体衬底的表面附近。 第一电极上的偏置信号在光活性区域和感测节点之间设置半导体衬底的区域中的电位。 第二电极设置在半导体衬底的表面附近。 第二电极上的偏置信号在光活性区域和电源节点之间设置半导体衬底的区域中的电位。 图像传感器包括控制器，其使偏置信号提供给电极，使得在像素积分周期期间在光活性区域中产生的光电荷积聚在光活性区域中，在电荷转移期间累积的光电荷转移到感测节点 并且在第三时间段内在光活性区域中产生的光电荷被传送到电源节点，而不通过感测节点。 成像器可以以高快门速度操作，并同时集成阵列中的像素。 高质量的图像可以不受运动伪像的影响。 可以获得高量子效率，良好的起霜控制，低暗电流，低噪声和低图像滞后。