摘要:
A scanning head for an optical position-measuring system includes a receiver grating, formed of photosensitive areas, for the scanning of locally intensity-modulated light of differing wavelengths. The receiver grating is formed from a semiconductor layer stack of a doped p-layer, an intrinsic i-layer and a doped n-layer. The individual photosensitive areas have a first doped layer and at least a part of the intrinsic layer in common and are electrically separated from one another by interruptions in the second doped layer.
摘要:
A scanning head for an optical position-measuring system includes a receiver grating, formed of photosensitive areas, for the scanning of locally intensity-modulated light of differing wavelengths. The receiver grating is formed from a semiconductor layer stack of a doped p-layer, an intrinsic i-layer and a doped n-layer. The individual photosensitive areas have a first doped layer and at least a part of the intrinsic layer in common and are electrically separated from one another by interruptions in the second doped layer.
摘要:
The invention relates to a method and an apparatus for the production of thin disks or films (3) from semiconductor bodies (1). Advantageously, a laser is used as a cutting tool (2). The beam of the laser is focused using suitable optical means, for example a cylindrical lens, in such a way that a linear intensity profile is created rather than a point-shaped one in order to cut the semiconductor film (3). Furthermore, it is meaningful to place several linear intensity profiles in a row in such a way that a parting line is created across the entire width of the semiconductor body (1), such that the entire cutting line can be removed quasi continuously, at the repetition rate of the laser. Ideally, the peripheral beams of the focused laser beam, which face the semiconductor body (1), should extend parallel to the edge of the semiconductor body (1). Near the tip (9) of the cutting tool (2), on the side facing the semiconductor film (3), the peripheral beams follow the bending radius of the semiconductor film (3), and an increasing gap is created as the distance from the focus (the tip of the cutting tool 2) increases.