公开(公告)号：US08269242B2

公开(公告)日：2012-09-18

申请号：US12628467

申请日：2009-12-01

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/06

摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层 包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围 与n型和p型半导体层中的至少一种绝缘。 半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。 使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

公开(公告)号：US20140191192A1

公开(公告)日：2014-07-10

申请号：US14235705

申请日：2011-07-29

申请人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

发明人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

公开(公告)号：US20100181588A1

公开(公告)日：2010-07-22

申请号：US12628467

申请日：2009-12-01

申请人： Dong Yul LEE ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

发明人： Dong Yul LEE ,  Seong Ju Park ,  Min Ki Kwon ,  Chu Young Cho ,  Chang Hee Cho ,  Yong Chun Kim ,  Seung Beom Seo ,  Myung Goo Cheong ,  Dong Joon Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/06

摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.

摘要翻译： 公开了一种半导体发光器件。 半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层 包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围 与n型和p型半导体层中的至少一种绝缘。 半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。 使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。