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1.
公开(公告)号:US06623798B2
公开(公告)日:2003-09-23
申请号:US09884993
申请日:2001-06-21
申请人: Ju-Cheol Shin , In-Sun Park , Young-Cheon Kim , Chul Whang-Bo , Hyeon-Deok Lee
发明人: Ju-Cheol Shin , In-Sun Park , Young-Cheon Kim , Chul Whang-Bo , Hyeon-Deok Lee
IPC分类号: C23C1642
CPC分类号: C23C16/4412 , C23C16/42 , C23C16/54
摘要: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.