公开(公告)号：US06943098B2

公开(公告)日：2005-09-13

申请号：US10605326

申请日：2003-09-23

Applicant: Fang-Yu Yeh ,  Chun-Che Chen

Inventor： Fang-Yu Yeh ,  Chun-Che Chen

IPC: H01L21/31 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/477 ,  H01L21/60 ,  H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/76838 ,  H01L29/6656

Abstract: A method of forming a contact opening is provided. First, a substrate having a plurality of conductive structures formed thereon is provided. An ion implantation is performed. Thereafter, a thermal treatment is carried out to form a liner layer on the sidewall of the conductive structure and the exposed substrate. The liner layer on the sidewall of the conductive structure has a thickness smaller than the liner layer on the substrate surface. A spacer is formed on each side of the conductive structure and then an insulation layer is formed over the substrate. The insulation layer is patterned to form a contact opening between two neighboring conductive structures. Since the liner layer on the sidewall of the conductive structures is already quite thin, there is no need to reduce thickness through an etching operation and uniformity of the liner layer on the substrate can be ensured.

Abstract translation: 提供一种形成接触开口的方法。 首先，提供其上形成有多个导电结构的基板。 进行离子注入。 此后，进行热处理以在导电结构的侧壁和暴露的基板上形成衬垫层。 导电结构的侧壁上的衬垫层的厚度小于衬底表面上的衬垫层。 在导电结构的每一侧上形成间隔物，然后在衬底上形成绝缘层。 图案化绝缘层以在两个相邻导电结构之间形成接触开口。 由于导电结构的侧壁上的衬垫层已经相当薄，所以不需要通过蚀刻操作来减小厚度，并且可以确保衬底上的衬垫层的均匀性。

公开(公告)号：US06559044B1

公开(公告)日：2003-05-06

申请号：US10237799

申请日：2002-09-10

Applicant: Chun-Che Chen ,  Fang-Yu Yeh ,  Han-Chih Lin ,  Chin-Sheng Chen

Inventor： Chun-Che Chen ,  Fang-Yu Yeh ,  Han-Chih Lin ,  Chin-Sheng Chen

IPC: H01L214763

CPC classification number: H01L21/76897 ,  H01L21/76802

Abstract: A method for forming contacts in a semiconductor device including a plurality of active devices formed over a substrate that includes depositing a first layer of dielectric material over the substrate and plurality of active devices, forming a first opening in the first layer of dielectric material, depositing a second layer of dielectric material over the first layer of dielectric material and in the first opening, providing a mask over the second layer of dielectric material, wherein the mask material is distinguishable over silicon oxides, and forming a second opening and a third opening in the second layer of dielectric material, wherein the second opening is aligned with the first opening and exposes a first silicide of a first active device, and the third opening exposes one of diffused regions of a second active device.

Abstract translation: 一种用于在半导体器件中形成接触的方法，所述半导体器件包括形成在衬底上的多个有源器件，所述有源器件包括在所述衬底上沉积介电材料的第一层和多个有源器件，在所述第一介电材料层中形成第一开口， 在所述第一介电材料层上并且在所述第一开口中的第二介电材料层，在所述第二介电材料层上提供掩模，其中所述掩模材料可以在硅氧化物上区分，并形成第二开口和第三开口 所述第二介电材料层，其中所述第二开口与所述第一开口对准并且暴露第一有源器件的第一硅化物，并且所述第三开口暴露第二有源器件的扩散区域中的一个。

公开(公告)号：US20090251411A1

公开(公告)日：2009-10-08

申请号：US12154255

申请日：2008-05-21

Applicant: Chun-Che Chen

Inventor： Chun-Che Chen

IPC: G09G5/08

CPC classification number: G06F3/03547 ,  G06F3/03543

Abstract: A computer input device includes a body and a trace-detecting module coupled to the body. The body has a micro control unit (MCU), and the trace-detecting module has a light pervious area, and a trace-detecting unit. The trace-detecting unit further includes a light source and a sensor. The sensor senses a reflected light beam for a user's digit movement on the light pervious area at a velocity which can be sensed by the sensor. If an automatically scrolling mode is activated and the velocity exceeds a threshold stored in the MCU, then the MCU executes automatic scrolling at a predetermined scrolling speed.

Abstract translation: 计算机输入设备包括主体和跟踪检测模块，该模块耦合到主体。 机体具有微控制单元（MCU），跟踪检测模块具有透光区域和跟踪检测单元。 轨迹检测单元还包括光源和传感器。 传感器以可透过传感器感测的速度感测用于在透光区域上的用户数字移动的反射光束。 如果自动滚动模式被激活并且速度超过存储在MCU中的阈值，则MCU以预定的滚动速度执行自动滚动。

公开(公告)号：US06720252B2

公开(公告)日：2004-04-13

申请号：US10292589

申请日：2002-11-13

Applicant: Chun-Che Chen ,  Tza-Hao Wang

Inventor： Chun-Che Chen ,  Tza-Hao Wang

IPC: H01L214763

CPC classification number: H01L21/76808

Abstract: A method for manufacturing a semiconductor device includes providing a dielectric layer over a substrate, providing a first photoresist layer over the dielectric layer, patterning and defining the first photoresist layer, etching the first photoresist layer and the dielectric layer to form a plurality of vertical openings, removing the first photoresist layer, depositing a second photoresist layer over the dielectric layer, wherein the second photoresist layer fills the plurality of vertical openings, removing only a portion of the second photoresist layer deposited over the dielectric layer, wherein the second photoresist layer has a first substantially uniform thickness over the dielectric layer, depositing an anti-reflection coating layer over the second photoresist layer, providing a third photoresist layer over the anti-reflection coating layer, patterning and defining the third photoresist layer, and etching the anti-reflection coating layer and the second photoresist layer to form a plurality of trenches in the dielectric layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底上提供介电层，在电介质层上提供第一光致抗蚀剂层，图案化和限定第一光致抗蚀剂层，蚀刻第一光致抗蚀剂层和电介质层以形成多个垂直开口 去除所述第一光致抗蚀剂层，在所述电介质层上沉积第二光致抗蚀剂层，其中所述第二光致抗蚀剂层填充所述多个垂直开口，仅去除沉积在所述电介质层上的所述第二光致抗蚀剂层的一部分，其中所述第二光致抗蚀剂层具有 在所述电介质层上的第一基本均匀的厚度，在所述第二光致抗蚀剂层上沉积抗反射涂层，在所述抗反射涂层上方提供第三光致抗蚀剂层，图案化和限定所述第三光致抗蚀剂层，以及蚀刻所述抗反射 涂层和第二光致抗蚀剂层 rm是电介质层中的多个沟槽。