Synchronous memory
    2.
    发明授权
    Synchronous memory 有权
    同步存储器

    公开(公告)号:US07183798B1

    公开(公告)日:2007-02-27

    申请号:US11041319

    申请日:2005-01-24

    IPC分类号: H03K19/173

    摘要: Systems and methods are disclosed herein to provide improved memory techniques for logic blocks within a programmable logic device. For example, in accordance with an embodiment of the present invention, a programmable logic device includes a first and a second logic slice adapted to receive a first and a second clock signal. The first and second logic slices may be combined to form wider and deeper memory and single port or synchronous dual port memory.

    摘要翻译: 本文公开了系统和方法,以为可编程逻辑器件内的逻辑块提供改进的存储器技术。 例如,根据本发明的实施例,可编程逻辑器件包括适于接收第一和第二时钟信号的第一和第二逻辑片。 可以组合第一和第二逻辑片以形成更宽更深的存储器和单端口或同步双端口存储器。