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    Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
    4.
    发明授权
    Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same 失效
    具有用于超低电容互连的气隙的半导体器件的制造及其制造方法

    公开(公告)号：US06888249B2

    公开(公告)日：2005-05-03

    申请号：US10647813

    申请日：2003-08-25

    申请人： Paul Albert Kohl ,  Sue Ann Bidstrup Allen ,  Clifford Lee Henderson ,  Hollie Ann Reed ,  Dhananjay M. Bhusari

    发明人： Paul Albert Kohl ,  Sue Ann Bidstrup Allen ,  Clifford Lee Henderson ,  Hollie Ann Reed ,  Dhananjay M. Bhusari

    IPC分类号： H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/7682

    摘要： A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

    摘要翻译： 公开了一种在固体结构和具体的半导体结构内形成气隙或间隙的方法，以减少诸如金属线的电气元件之间的电容耦合，其中牺牲材料用于占据半导体结构中的封闭内部体积。 使牺牲材料分解成一种或多种气体分解产物，在一个实施方案中通过扩散将其去除，通过外涂层。 牺牲材料的分解在预先被牺牲材料占据的封闭内部空间处留下气隙或间隙。 气隙可以设置在电引线之间，以最小化它们之间的电容耦合。 还公开了形成多层气隙的方法和方法或形成其中一部分外涂层与至少一个气隙接触的过涂层导电线或导线。

    Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same
    8.
    发明授权
    Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same 有权
    具有用于超低电容互连的气隙的半导体器件的制造及其制造方法

    公开(公告)号：US06610593B2

    公开(公告)日：2003-08-26

    申请号：US09945305

    申请日：2001-08-31

    申请人： Paul Albert Kohl ,  Sue Ann Bidstrup Allen ,  Clifford Lee Henderson ,  Hollie Anne Reed ,  Dhananjay M. Bhusari

    发明人： Paul Albert Kohl ,  Sue Ann Bidstrup Allen ,  Clifford Lee Henderson ,  Hollie Anne Reed ,  Dhananjay M. Bhusari

    IPC分类号： H01L214763

    CPC分类号： H01L21/7682

    摘要： A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

    摘要翻译： 公开了一种在固体结构和具体的半导体结构内形成气隙或间隙的方法，以减少诸如金属线的电气元件之间的电容耦合，其中牺牲材料用于占据半导体结构中的封闭内部体积。 使牺牲材料分解成一种或多种气体分解产物，在一个实施方案中通过扩散将其去除，通过外涂层。 牺牲材料的分解在预先被牺牲材料占据的封闭内部空间处留下气隙或间隙。 气隙可以设置在电引线之间，以最小化它们之间的电容耦合。 还公开了形成多层气隙的方法和方法或形成其中一部分外涂层与至少一个气隙接触的过涂层导电线或导线。