公开(公告)号：US20180208455A1

公开(公告)日：2018-07-26

申请号：US15834424

申请日：2017-12-07

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION ,  SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

发明人： Xianchao Wang

IPC分类号： B81B3/00 ,  B81C1/00 ,  H04R9/08 ,  H04R31/00

CPC分类号： B81B3/0051 ,  B81B3/001 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C1/00103 ,  B81C2201/0109 ,  H04R9/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

摘要： A method for manufacturing a semiconductor device includes providing a semiconductor structure including a first electrode layer, forming a sacrificial layer on the first electrode layer, the sacrificial layer including a recess having a pointed bottom defining a depth, forming a second electrode layer on the sacrificial layer, the second electrode layer including a first opening exposing the recess, and forming a support layer filling the recess, the first opening, and on the second electrode layer. A portion of the support layer filling the recess forms a stopper having a height equal to the depth of the recess. The method also includes forming a second opening extending through the support layer and the second electrode layer and exposing a surface of the sacrificial layer, and removing a portion of the sacrificial layer to form a cavity.

公开(公告)号：US09956740B2

公开(公告)日：2018-05-01

申请号：US14111468

申请日：2012-04-10

申请人： Kyung Byung Yoon ,  Hyun Sung Kim

发明人： Kyung Byung Yoon ,  Hyun Sung Kim

IPC分类号： C23C14/22 ,  B32B3/30 ,  B81C1/00 ,  C23C14/08

CPC分类号： B32B3/30 ,  B81C1/00103 ,  B81C1/00373 ,  C23C14/083 ,  C23C14/22 ,  Y10T428/13

摘要： The present invention provides a method for manufacturing a bowl-shaped structure, a bowl-shaped structure manufactured thereby, and a bowl array using the bowl-shaped structure, wherein the method for manufacturing the bowl-shaped structure comprises the following steps: putting into contact a first substrate, on which a particle alignment layer is formed, and a second substrate so as to transfer the particle alignment layer to the second substrate; forming a particle-thin film complex by coating the particle alignment layer that is transferred on the second substrate with a thin film formation substance; removing a portion of the thin film formation substance from the complex to expose particles, and then removing the exposed particles to form a template having a hole; and forming the bowl-shaped structure by coating a first substance on the surface of the hole of the template and then removing the template.

公开(公告)号：US20170341932A1

公开(公告)日：2017-11-30

申请号：US15169110

申请日：2016-05-31

申请人： Honeywell International Inc.

发明人： Grant Lodden ,  Xiao Zhu Fan

IPC分类号： B81C1/00 ,  B28B1/30

CPC分类号： B28B1/30 ,  B81C1/00103 ,  B81C1/00634 ,  B81C99/009 ,  G02B3/0018 ,  H01L27/14685 ,  H01L27/14687

摘要： A method of fabricating three-dimensional (3D) structures comprises forming a patterned area in a handle wafer, and bonding a mold wafer over the patterned area to produce one or more sealed cavities having a first pressure in the handle wafer. The mold wafer is heated past its softening point at a second pressure different from the first pressure to create a differential pressure across the mold wafer over the sealed cavities. The mold wafer is then cooled to harden the mold wafer into one or more 3D shapes over the sealed cavities. One or more materials are deposited on an outer surface of the mold wafer over the 3D shapes to form a structure layer having 3D structures that conform to the hardened 3D shapes of the mold wafer. The 3D structures are then bonded to a device wafer, and the handle wafer is removed to expose the 3D structures.

公开(公告)号：US09738511B2

公开(公告)日：2017-08-22

申请号：US14225275

申请日：2014-03-25

申请人： InvenSense, Inc.

发明人： Jongwoo Shin ,  Kirt Reed Williams ,  Cerina Zhang ,  Kuolung (Dino) Lei

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81C1/00103 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133

摘要： A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.

公开(公告)号：US20170140943A1

公开(公告)日：2017-05-18

申请号：US15318702

申请日：2015-05-29

申请人： Robert Bosch GmbH

发明人： Simon Armbruster ,  Benjamin Steuer ,  Stefan Pinter ,  Dietmar Haberer ,  Jochen Tomaschko

IPC分类号： H01L21/48 ,  B81B1/00 ,  B81C1/00

CPC分类号： H01L21/4803 ,  B81B1/00 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C1/0042 ,  B81C2201/013 ,  H01L21/3083

摘要： A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

公开(公告)号：US09546308B2

公开(公告)日：2017-01-17

申请号：US14373278

申请日：2013-01-22

申请人： THE ADMINISTRATORS OF THE TULANE EDUCATIONAL FUND

发明人： Noshir Pesika ,  Keijia Jin

IPC分类号： C09J183/04 ,  C09J7/00 ,  C09J9/00 ,  B82Y30/00 ,  B81C1/00 ,  F16B5/07 ,  F16B11/00

CPC分类号： C09J9/00 ,  B81B2203/0361 ,  B81B2207/053 ,  B81C1/00103 ,  B82Y30/00 ,  C09J7/00 ,  C09J175/04 ,  C09J183/04 ,  C09J2201/626 ,  F16B5/07 ,  F16B11/006 ,  Y10T428/24479

摘要： The present invention relates to an easy, scalable method, relying on conventional and unconventional techniques, to incorporate tilt in the fabrication of synthetic polymer-based dry adhesives mimicking the gecko adhesive system. These dry, reversible adhesives demonstrate anisotropic adhesion properties, providing strong adhesion and friction forces when actuated in the gripping direction and an initial repulsive normal force and negligible friction when actuated in the releasing direction.

摘要翻译： 本发明涉及一种简单，可扩展的方法，依靠常规和非常规技术，在模拟壁虎粘合剂系统的基于合成聚合物的干燥粘合剂的制造中引入倾斜。 这些干式，可逆的粘合剂表现出各向异性粘合性能，当沿夹紧方向致动时提供强烈的粘合力和摩擦力，并且在沿释放方向致动时具有初始的排斥法向力和可忽略的摩擦力。

公开(公告)号：US20160334620A1

公开(公告)日：2016-11-17

申请号：US15112375

申请日：2015-01-19

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Vincent Reboud ,  Stephan Landis ,  Etienne Rognin

IPC分类号： G02B27/00 ,  G02B3/08 ,  G02B3/02 ,  B29C35/02 ,  B29C35/00 ,  B29D11/00 ,  G02B3/00 ,  B29C59/02

CPC分类号： G02B27/0012 ,  B29C35/002 ,  B29C35/02 ,  B29C59/02 ,  B29D11/00269 ,  B29D11/00365 ,  B29K2025/06 ,  B29K2033/12 ,  B29L2011/005 ,  B81B2201/047 ,  B81B2203/0392 ,  B81C1/00103 ,  G02B3/0018 ,  G02B3/02 ,  G02B3/08

摘要： A method for determining at least one reflow parameter for obtaining a structure approximating a sought structure by reflowing an initial structure different to the sought structure, the initial structure including at least one pattern formed in a thermo-deformable layer arranged on a substrate. The thermo-deformable layer forms a residual layer surrounding each pattern and from which each pattern extends such that each pattern has an interface only with the surrounding medium. The method includes: predicting progression over time of geometry of the initial structure subject to reflow, to obtain a plurality of predicted structures each associated with reflow parameters including at least a reflow time and a reflow temperature; computing correlation values of the geometry of each predicted structure with respect to the sought structure; identifying reflow parameters for obtaining the predicted structure offering a highest correlation value.

摘要翻译： 一种用于确定至少一个回流参数的方法，用于通过回流与所寻求的结构不同的初始结构来获得近似寻找结构的结构，所述初始结构包括形成在布置在基板上的热变形层中的至少一个图案。 热变形层形成围绕每个图案的残留层，每个图案从其延伸，使得每个图案仅具有与周围介质的界面。 该方法包括：预测经受回流的初始结构的几何形状随时间的进展，以获得每个与包括至少回流时间和回流温度的回流参数相关联的多个预测结构; 计算每个预测结构相对于寻找结构的几何的相关值; 识别用于获得提供最高相关值的预测结构的回流参数。

公开(公告)号：US09322061B2

公开(公告)日：2016-04-26

申请号：US14199248

申请日：2014-03-06

申请人： International Business Machines Corporation

发明人： Jingwei Bai ,  Qinghuang Lin ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC分类号： C12Q1/68

CPC分类号： B01L3/502707 ,  B01L3/502761 ,  B01L2200/0663 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0861 ,  B01L2300/0896 ,  B01L2300/12 ,  B01L2400/0415 ,  B01L2400/086 ,  B81B2201/058 ,  B81B2203/0338 ,  B81B2203/0392 ,  B81C1/00103 ,  B82Y40/00 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N33/48721

摘要： A technique includes forming a gradient channel with width and depth gradients. A mask is disposed on top of a substrate. The mask is patterned with at least one elongated channel pattern having different elongated channel pattern widths. A channel is etched in the substrate in a single etching step, the channel having a width gradient and a corresponding depth gradient both simultaneously etched in the single etching step according to the different elongated channel pattern widths in the mask.

摘要翻译： 一种技术包括形成具有宽度和深度梯度的梯度通道。 掩模设置在基板的顶部。 掩模被图案化为具有不同细长通道图案宽度的至少一个细长通道图案。 在单个蚀刻步骤中在衬底中蚀刻沟道，根据掩模中不同的细长沟道图案宽度，通道具有在单个蚀刻步骤中同时蚀刻的宽度梯度和相应的深度梯度。

公开(公告)号：US09164275B2

公开(公告)日：2015-10-20

申请号：US13486280

申请日：2012-06-01

申请人： Yasukazu Kimura ,  Jun Fujiyoshi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda

发明人： Yasukazu Kimura ,  Jun Fujiyoshi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda

IPC分类号： G02B26/00 ,  G09G5/00 ,  G09G5/10 ,  G02B26/02 ,  G02B26/04 ,  B81B7/02 ,  G09G3/34 ,  B32B3/00 ,  B81C1/00 ,  H02N1/00 ,  B81B3/00

CPC分类号： G02B26/02 ,  B32B3/00 ,  B81B3/0062 ,  B81B7/02 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/0376 ,  B81C1/00103 ,  G02B26/04 ,  G02F2203/12 ,  G09G3/34 ,  G09G5/10 ,  G09G2300/08 ,  H02N1/006

摘要： A display device includes: a plurality of pixels each having a shutter plate formed and an actuator portion, wherein the actuator portion has a beam portion connected to the shutter plate, a drive electrode causing the beam portion to bend to drive the shutter plate, a first supporting portion supporting the drive electrode and fixed on a substrate, and a second supporting portion supporting the beam portion and fixed on the substrate, at least one of the first supporting portion and the second supporting portion has a planar portion, and a recessed portion formed to be concaved from the planar portion and connected to the substrate, and the recessed portion has a vertically formed portion formed to be inclined substantially vertically from the planar portion, and a portion starting from the vertically formed portion and formed such that the inclination of the portion becomes gentle toward the substrate.

摘要翻译： 显示装置包括：多个像素，每个具有形成的快门板和致动器部分，其中致动器部分具有连接到快门板的光束部分，使光束部分弯曲以驱动快门板的驱动电极， 支撑驱动电极并固定在基板上的第一支撑部分和支撑梁部分并固定在基板上的第二支撑部分，第一支撑部分和第二支撑部分中的至少一个具有平坦部分，并且凹部 形成为从平面部分凹陷并连接到基板，并且凹部具有形成为从平面部分大致垂直地倾斜的垂直形成部分，以及从垂直形成部分开始的部分， 该部分对基板变得柔和。

公开(公告)号：US20150232323A1

公开(公告)日：2015-08-20

申请号：US14624071

申请日：2015-02-17

申请人： Robert Bosch GmbH

发明人： Dietmar HABERER

IPC分类号： B81B1/00 ,  B81B7/02 ,  B81C1/00

CPC分类号： B81B1/004 ,  B81B7/02 ,  B81B2201/04 ,  B81B2201/047 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00103 ,  B81C2201/0194 ,  B81C2203/0172

摘要： A method for producing a micromechanical component, and a micromechanical component, includes providing a substrate having first and second outer surfaces, the second surface facing away from the first surface; forming a through-hole through the substrate from the first outer surface up to the second outer surface; attaching an optical functional layer, on the second outer surface, to cover the through-hole; removing a first segment of the substrate on the first surface of the substrate so that there arises a third outer surface inclined relative to the second surface, the third surface facing away from the second surface, the inclined surface enclosing the through-hole; and separating the micromechanical component by separating a first part of the substrate, having the through-hole, and a second part, attached to the first part, of the optical functional layer from a remaining part of the substrate and a remaining part of the optical functional layer.

摘要翻译： 微机械部件的制造方法和微机械部件包括提供具有第一和第二外表面的基板，所述第二表面背离所述第一表面; 从所述第一外表面到所述第二外表面形成穿过所述基板的通孔; 在所述第二外表面上附着光学功能层以覆盖所述通孔; 去除所述基板的所述第一表面上的所述基板的第一部分，使得出现相对于所述第二表面倾斜的第三外表面，所述第三表面背离所述第二表面，所述倾斜表面包围所述通孔; 以及通过从所述基板的剩余部分分离具有所述通孔的所述基板的第一部分和附接到所述第一部分的所述光学功能层的第二部分和所述光学部件的剩余部分来分离所述微机械部件 功能层。