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    Semiconductor memory device and method of manufacturing the same
    1.
    发明授权
    Semiconductor memory device and method of manufacturing the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US09349597B2

    公开(公告)日：2016-05-24

    申请号：US13613653

    申请日：2012-09-13

    申请人： Yong Dae Park ,  Ga Hee Lee

    发明人： Yong Dae Park ,  Ga Hee Lee

    IPC分类号： H01L29/792 ,  H01L21/265 ,  H01L27/115

    CPC分类号： H01L21/26586 ,  H01L27/11582 ,  H01L29/7926

    摘要： A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.

    摘要翻译： 半导体存储器件包括交替层叠在基板上的导电膜和绝缘层，穿透导电膜和绝缘层的大致垂直的沟道层，包括介于导电膜和基本垂直沟道层之间的电荷存储膜的多层膜，以及 形成在导电膜的蚀刻表面上的第一抗扩散膜。

    Method of preparation an inclusion-complex comprising hydrophobic physiological activation material including with cyclodextrin and its use
    4.
    发明授权
    Method of preparation an inclusion-complex comprising hydrophobic physiological activation material including with cyclodextrin and its use 有权
    制备含有包含环糊精的疏水性生理活性物质的包合络合物及其用途的方法

    公开(公告)号：US08658692B2

    公开(公告)日：2014-02-25

    申请号：US12674853

    申请日：2008-09-03

    申请人： Moo-Sung Kim ,  Sang-Rin Lee ,  Yong-Dae Park

    发明人： Moo-Sung Kim ,  Sang-Rin Lee ,  Yong-Dae Park

    IPC分类号： A01N43/16

    CPC分类号： C08B37/0015 ,  A61K8/35 ,  A61K8/738 ,  A61Q19/08

    摘要： Disclosed herein are a method for preparation of an inclusion-complex including a physiologically active hydrophobic substance in cyclodextrin and a derivative thereof, and use of the inclusion-complex prepared by the same. More particularly, the present invention provides a method for preparing an inclusion-complex, which includes agitating cyclodextrin and a derivative thereof in an agitator at high speed, spraying a physiologically active hydrophobic substance dissolved in alcohol onto the agitator, and drying and crushing the mixture obtained from the preceding step and, in addition, use of the prepared inclusion-complex. The present inventive method has merits of reduced inclusion time and increased inclusion rate. The prepared inclusion-complex has excellent cell and collagen proliferation effects compared to physiologically active hydrophobic substances which were not inclusion processed, thereby being used in production of a cosmetic composition with improved anti-wrinkle and anti-ageing effects.

    摘要翻译： 本文公开了一种在环糊精及其衍生物中制备包含生理活性疏水物质的包合络合物的方法，以及使用由其制备的包合物。 更具体地说，本发明提供一种制备包合络合物的方法，其包括在搅拌器中高速搅拌环糊精及其衍生物，将溶解在醇中的生理活性疏水物质喷雾到搅拌器上，并干燥并粉碎混合物 由上述步骤获得，另外使用制备的包合物。 本发明的方法具有减少夹杂时间和增加包合率的优点。 与未包含加工的生理活性疏水性物质相比，制备的包合络合物具有优异的细胞和胶原增殖效果，从而用于生产具有改善的抗皱和抗衰老作用的化妆品组合物。

    Method of erasing semiconductor memory device
    5.
    发明授权
    Method of erasing semiconductor memory device 有权
    擦除半导体存储器件的方法

    公开(公告)号：US08537632B2

    公开(公告)日：2013-09-17

    申请号：US13095156

    申请日：2011-04-27

    申请人： Hea Jong Yang ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

    发明人： Hea Jong Yang ,  Hee Youl Lee ,  Sung Jae Chung ,  Hyun Heo ,  Jeong Hyong Yi ,  Yong Dae Park

    IPC分类号： G11C7/00

    CPC分类号： G11C16/0483 ,  G11C16/16 ,  G11C16/32

    摘要： A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

    摘要翻译： 擦除半导体存储器件的方法包括：基于相邻字线之间的干扰强度将每个存储器块的多个字线分组成至少两组; 通过对所选择的存储块的所有字线施加接地电压并通过向所选存储块的阱施加擦除电压来执行擦除操作; 并且在擦除操作期间首先将一组组的接地电压增加到正电压。

    THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE
    7.
    发明申请
    THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE 有权
    三维非易失性存储器件

    公开(公告)号：US20130194869A1

    公开(公告)日：2013-08-01

    申请号：US13605942

    申请日：2012-09-06

    申请人： Eun Seok CHOI ,  Jung Ryul Ahn ,  Se Hoon Kim ,  Young Dae Park ,  In Geun Lim ,  Jung Seok Oh

    发明人： Eun Seok CHOI ,  Jung Ryul Ahn ,  Se Hoon Kim ,  Young Dae Park ,  In Geun Lim ,  Jung Seok Oh

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0483 ,  H01L27/11565 ,  H01L27/11582

    摘要： A three-dimensional (3-D) non-volatile memory device according to embodiment of the present invention includes a plurality of bit lines, at least one string row extending in a first direction coupled to the bit lines and including 2N strings, wherein the N includes a natural number, a common source selection line configured to control source selection transistors of the 2N strings included in a memory block, a first common drain selection line configured to control drain selection transistors of a first string and a 2N-th string among the 2N strings included in a memory block, and N−1 second common drain selection lines configured to control drain selection transistors of adjacent strings in the first direction among remaining strings other than the first string and the 2N-th string.

    摘要翻译： 根据本发明的实施例的三维（3-D）非易失性存储器件包括多个位线，至少一个串行沿第一方向延伸，耦合到位线并包括2N个字符串，其中， N包括自然数，被配置为控制包括在存储块中的2N串的源选择晶体管的公共源选择线，被配置为控制第一串的漏极选择晶体管和第2N串的第2N串的第一公共漏极选择线 包括在存储块中的2N个串，以及N-1个第二公共漏极选择线，被配置为控制除第一串和第2N个串之外的剩余串之中的第一方向上的相邻串的漏极选择晶体管。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20130161725A1

    公开(公告)日：2013-06-27

    申请号：US13613653

    申请日：2012-09-13

    申请人： Yong Dae PARK ,  Ga Hee LEE

    发明人： Yong Dae PARK ,  Ga Hee LEE

    IPC分类号： H01L29/792 ,  H01L21/425

    CPC分类号： H01L21/26586 ,  H01L27/11582 ,  H01L29/7926

    摘要： A semiconductor memory device includes conductive films and insulating layers alternately stacked on a substrate, substantially vertical channel layers penetrating the conductive films and the insulating layers, multilayer films including a charge storage film interposed between the conductive films and the substantially vertical channel layers, and a first anti-diffusion film formed on etched surfaces of the conductive films.

    摘要翻译： 半导体存储器件包括交替层叠在基板上的导电膜和绝缘层，穿透导电膜和绝缘层的大致垂直的沟道层，包括介于导电膜和基本垂直沟道层之间的电荷存储膜的多层膜，以及 形成在导电膜的蚀刻表面上的第一抗扩散膜。

    Backlight assembly and display device having the same
    9.
    发明授权
    Backlight assembly and display device having the same 失效
    具有相同的背光组件和显示装置

    公开(公告)号：US08459828B2

    公开(公告)日：2013-06-11

    申请号：US12837013

    申请日：2010-07-15

    申请人： Sang-Min Kang ,  Jong-Dae Park

    发明人： Sang-Min Kang ,  Jong-Dae Park

    IPC分类号： F21V21/00

    CPC分类号： F21V19/0095 ,  F21V15/02 ,  G02F1/133604

    摘要： A backlight assembly includes a lamp unit, a covering member, a panel guiding member and a lamp supporting member. The lamp unit has a first electrode and a second electrode disposed at a first side of the lamp unit and a curved portion disposed at a second side of the lamp unit that is opposite to the first side. The covering member covers at least one of a first region corresponding to the first and second electrodes and a second region corresponding to the curved portion. The panel guiding member is configured to support a display panel that displays images using light generated by the lamp unit. The lamp supporting member is configured to retain the lamp unit. Therefore, a number of inverters may be reduced, thereby lowering cost and time of manufacturing the backlight assembly. Furthermore, reliability of the backlight assembly may be enhanced.

    摘要翻译： 背光组件包括灯单元，覆盖构件，面板引导构件和灯支撑构件。 灯单元具有设置在灯单元的第一侧的第一电极和第二电极以及设置在灯单元的与第一侧相对的第二侧的弯曲部分。 覆盖部件覆盖对应于第一和第二电极的第一区域和对应于弯曲部分的第二区域中的至少一个。 面板引导构件被配置为支撑使用由灯单元产生的光来显示图像的显示面板。 灯支撑构件被配置为保持灯单元。 因此，可以减少多个逆变器，从而降低制造背光组件的成本和时间。 此外，可以提高背光组件的可靠性。

    Light diffusion member, back light assembly including the same and display device including the same
    10.
    发明授权
    Light diffusion member, back light assembly including the same and display device including the same 有权
    光漫射构件，包括其的背光组件和包括其的显示装置

    公开(公告)号：US08268441B2

    公开(公告)日：2012-09-18

    申请号：US13079510

    申请日：2011-04-04

    申请人： Geun-Hyung Kim ,  Jong-Dae Park ,  Tae-Seok Kim

    发明人： Geun-Hyung Kim ,  Jong-Dae Park ,  Tae-Seok Kim

    IPC分类号： B32B27/18 ,  B32B27/20 ,  B32B27/36 ,  G02F1/1335 ,  G02F1/13357

    CPC分类号： G02B5/0242 ,  G02B5/0226 ,  G02B5/0278 ,  G02F1/133606 ,  G02F1/133611 ,  G02F2001/133317 ,  Y10T428/1086 ,  Y10T428/26 ,  Y10T428/31507 ,  Y10T428/31786

    摘要： The light diffusion member includes a light diffusing body and a light diffusing layer. The light diffusing body includes a polymer mixture obtained by uniformly blending a first polymer having a first glass transition temperature and a second polymer having a second transition temperature higher than the first transition temperature. Alternatively, the light diffusing body includes a copolymer prepared from the first and the second polymer. The light diffusing body diffuses an incident light through a light exiting surface. The light diffusing layer is formed on the light exiting surface of the light diffusing body and includes a binder resin having beads. A back light assembly including the light diffusion member and a liquid crystal display device including the light diffusion member exhibit an improved luminance and an improved light diffusing efficiency.

    摘要翻译： 光漫射构件包括光漫射体和光漫射层。 光漫射体包括通过均匀混合具有第一玻璃化转变温度的第一聚合物和具有高于第一转变温度的第二转变温度的第二聚合物而获得的聚合物混合物。 或者，光漫射体包括由第一和第二聚合物制备的共聚物。 光漫射体通过光出射表面扩散入射光。 光漫射层形成在光漫射体的光出射面上，并且包括具有珠的粘结剂树脂。 包括光漫射构件的背光组件和包括光漫射构件的液晶显示装置具有改进的亮度和改善的光漫射效率。