公开(公告)号：US20090289618A1

公开(公告)日：2009-11-26

申请号：US11814835

申请日：2006-08-31

申请人： Daisuke Tajima ,  Hirokazu Nakabayashi ,  Naoki Nishio

发明人： Daisuke Tajima ,  Hirokazu Nakabayashi ,  Naoki Nishio

IPC分类号： G01R15/18

CPC分类号： G01R19/175

摘要： In a zero-phase current detecting apparatus, a feedback loop is made up of a pulse generating unit, a current detecting unit, a peak detecting unit, an adding unit, and a current regulating unit. The adding unit outputs a difference between a target value and a peak value detected by the peak detecting unit. A zero-phase current is detected based on the difference output from the adding unit as a result of regulation of the peak value so as to be the target value in the adding unit.

摘要翻译： 在零相电流检测装置中，反馈回路由脉冲发生单元，电流检测单元，峰值检测单元，加法单元和电流调节单元组成。 加法单元输出由峰值检测单元检测的目标值和峰值之间的差值。 作为调整峰值的结果，基于从加法单元输出的差来检测零相电流，作为加法单元中的目标值。

公开(公告)号：US07696743B2

公开(公告)日：2010-04-13

申请号：US11814835

申请日：2006-08-31

申请人： Daisuke Tajima ,  Hirokazu Nakabayashi ,  Naoki Nishio

发明人： Daisuke Tajima ,  Hirokazu Nakabayashi ,  Naoki Nishio

IPC分类号： G01R33/00

CPC分类号： G01R19/175

摘要： In a zero-phase current detecting apparatus, a feedback loop is made up of a pulse generating unit, a current detecting unit, a peak detecting unit, an adding unit, and a current regulating unit. The adding unit outputs a difference between a target value and a peak value detected by the peak detecting unit. A zero-phase current is detected based on the difference output from the adding unit as a result of regulation of the peak value so as to be the target value in the adding unit.

摘要翻译： 在零相电流检测装置中，反馈回路由脉冲发生单元，电流检测单元，峰值检测单元，加法单元和电流调节单元组成。 加法单元输出由峰值检测单元检测的目标值和峰值之间的差值。 作为调整峰值的结果，基于从加法单元输出的差来检测零相电流，作为加法单元中的目标值。

公开(公告)号：US06277763B1

公开(公告)日：2001-08-21

申请号：US09465031

申请日：1999-12-16

申请人： Katsuhisa Kugimiya ,  Takanori Nishizawa ,  Daisuke Tajima

发明人： Katsuhisa Kugimiya ,  Takanori Nishizawa ,  Daisuke Tajima

IPC分类号： H01L2100

CPC分类号： H01J37/321 ,  C23F4/00 ,  H01L21/32136

摘要： A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such as CF4, NF3, SF6, and the like) and oxygen.

摘要翻译： 一种用于蚀刻包括多晶硅层和上覆钨层的衬底的方法和装置。 该方法包括使用由包括氟化气体（例如CF 4，NF 3，SF 6等）和氧气的气体混合物形成的等离子体来蚀刻室中的钨层。

公开(公告)号：US5779926A

公开(公告)日：1998-07-14

申请号：US596960

申请日：1996-02-05

申请人： Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

发明人： Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC分类号： H01J37/321 ,  C23F4/00 ,  H01L21/32136

摘要： A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.r of the first power level to the second power level, is selected so that the chlorine-containing etchant gas ionizes to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions in a number ratio of at least about 0.6:1. The increased amount of dissociated Cl.sup.+ ions relative to non-dissociated Cl.sub.2.sup.+ ions etches the multicomponent alloy on the substrate at an etch rate of at least about 500 nm/min, without forming etchant residue on the substrate.

摘要翻译： 描述了在衬底上蚀刻多组分合金而不在衬底上形成蚀刻剂残留物的方法。 在该方法中，将基板放置在包括等离子体发生器和等离子体电极的处理室中。 一种工艺气体，其包括（i）能够电离以形成离解的Cl +等离子体离子和非离解的Cl 2 +等离子体离子的含氯气体的体积流量比Vr，和（ii）能够增强氯 - 含有气体，被引入处理室。 通过（i）以等离子体发生器施加第一功率电平的RF电流，并且（ii）将第二功率电平的RF电流施加到等离子体电极，将工艺气体电离以形成能量地撞击衬底的等离子体离子。 选择（i）处理气体的体积流量比Vr和（ii）第一功率水平与第二功率水平的功率比Pr的组合，使得含氯蚀刻剂气体电离以形成离解的Cl +等离子体 离子和非离解的Cl2 +等离子体离子的数量比至少为约0.6:1。 解离的Cl +离子相对于未离解的Cl 2 +离子的量的增加量以至少约500nm / min的蚀刻速率蚀刻衬底上的多组分合金，而不在衬底上形成蚀刻剂残留物。