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公开(公告)号：US20090314210A1
公开(公告)日：2009-12-24
申请号：US12461820
申请日：2009-08-25
IPC分类号： H01L21/36
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
摘要翻译： 一种用于外延生长装置和方法的感受体，其中多个圆形通孔形成在凹槽的底壁中的外围区域中，该圆形通孔的距离为圆形底壁的中心的半径的大约1/2 。 这些通孔的总开口面积为底壁表面积的0.05〜55％。 在该外周区域设置的各通孔的开口面积为0.2〜3.2mm 2，通孔的密度为每平方厘米0.25〜25。 在将半导体晶片安装在口袋中之后，进行外延生长，同时源气体和载气（即，反应性气体）在基座的上表面侧流动，并使载气在下表面上流动 侧。
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公开(公告)号：US08926754B2
公开(公告)日：2015-01-06
申请号：US12461820
申请日：2009-08-25
IPC分类号： C23C16/00 , H01L21/306 , C30B25/12 , C23C16/458 , C30B29/06 , H01L21/687 , C23C16/455
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
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公开(公告)号：US20050000449A1
公开(公告)日：2005-01-06
申请号：US10483809
申请日：2002-12-23
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/12 , C30B29/06 , H01L21/687 , C23C16/00
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
摘要翻译： 一种用于外延生长装置和方法的感受体，其中多个圆形通孔形成在凹槽的底壁中的外围区域中，该圆形通孔的距离为圆形底壁的中心的半径的大约1/2 。 这些通孔的总开口面积为底壁表面积的0.05〜55％。 在该外周区域设置的各通孔的开口面积为0.2〜3.2mm 2，通孔的密度为每平方厘米0.25〜25。 在将半导体晶片安装在口袋中之后，进行外延生长，同时源气体和载气（即，反应性气体）在基座的上表面侧流动，并使载气在下表面上流动 侧。
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