公开(公告)号：US5384470A

公开(公告)日：1995-01-24

申请号：US970252

申请日：1992-11-02

申请人： Takeshi Tachibana ,  Dale G. Thompson, Jr. ,  Jeffrey T. Glass

发明人： Takeshi Tachibana ,  Dale G. Thompson, Jr. ,  Jeffrey T. Glass

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L29/1602 ,  H01L29/47

摘要： A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide layer forms a substantially chemically non-reactive interface with the polycrystalline diamond. A single layer of substantially stoichiometric proportions of the refractory metal layer is provided in one embodiment of the rectifying contact. Another embodiment includes a second metal-rich refractory metal carbide layer on the stoichiometric layer. Yet another embodiment includes a carbon-rich refractory metal layer between the stoichiometric layer and the polycrystalline diamond layer. A metal field effect transistor including the rectifying contact may also be fabricated. A method for making the rectifying contact includes depositing a layer, or layers, of the refractory metal carbide on the polycrystalline diamond, as contrasted with a solid state reaction to form the refractory metal carbide. Another method includes depositing the polycrystalline diamond on a refractory metal carbide layer.

摘要翻译： 包括多晶金刚石层上的难熔金属碳化物层的整流接触提供高温操作，并且可以包括在诸如二极管和场效应晶体管的半导体器件中。 难熔金属碳化物层与多晶金刚石形成基本上化学上非反应性的界面。 在精馏接触的一个实施方案中提供了基本上化学计量比例的难熔金属层的单层。 另一个实施方案包括化学计量层上的第二富金属难熔金属碳化物层。 另一个实施方案包括在化学计量层和多晶金刚石层之间的富碳难熔金属层。 也可以制造包括整流接点的金属场效应晶体管。 与制造难熔金属碳化物的固态反应相反，制造精整接触的方法包括在多晶金刚石上沉积耐火金属碳化物的一层或多层。 另一种方法包括将多晶金刚石沉积在难熔金属碳化物层上。

公开(公告)号：US5155559A

公开(公告)日：1992-10-13

申请号：US735534

申请日：1991-07-25

申请人： Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das ,  Dale G. Thompson, Jr. ,  Scott R. Sahaida

发明人： Trevor P. Humphreys ,  Robert J. Nemanich ,  Kalyankumar Das ,  Dale G. Thompson, Jr. ,  Scott R. Sahaida

IPC分类号： H01L21/285 ,  H01L29/16 ,  H01L29/47

CPC分类号： H01L29/1602 ,  H01L21/28537 ,  H01L29/16 ,  H01L29/47

摘要： A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between the diamond layer and the refractory metal silicide layer. The annealed interface region is preferably a non-abrupt interface comprising material selected from the group consisting of silicon carbide, the carbide of the refractory metal and mixtures thereof. The present invention also provides a method for making a rectifying contact on a semiconducting diamond layer comprising the steps of forming a refractory metal silicide on the diamond layer, and annealing the refractory metal silicide and diamond layer. Preferably, the step of annealing comprises the step of heating the diamond layer and refractory metal silicide at temperature of at least about 450.degree. C.

摘要翻译： 包括半导体金刚石层（例如单晶或多晶），与金刚石层相邻的难熔金属硅化物层以形成与其整流接触的半导体器件以及金刚石层与难熔金属硅化物层之间的退火界面区域。 退火的界面区优选是非突变界面，其包括选自碳化硅，难熔金属的碳化物及其混合物的材料。 本发明还提供了一种在半导体金刚石层上制造整流接触的方法，包括在金刚石层上形成难熔金属硅化物，以及对难熔金属硅化物和金刚石层进行退火的步骤。 优选地，退火步骤包括在至少约450℃的温度下加热金刚石层和难熔金属硅化物的步骤。