公开(公告)号：US5384470A

公开(公告)日：1995-01-24

申请号：US970252

申请日：1992-11-02

申请人： Takeshi Tachibana ,  Dale G. Thompson, Jr. ,  Jeffrey T. Glass

发明人： Takeshi Tachibana ,  Dale G. Thompson, Jr. ,  Jeffrey T. Glass

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L29/1602 ,  H01L29/47

摘要： A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide layer forms a substantially chemically non-reactive interface with the polycrystalline diamond. A single layer of substantially stoichiometric proportions of the refractory metal layer is provided in one embodiment of the rectifying contact. Another embodiment includes a second metal-rich refractory metal carbide layer on the stoichiometric layer. Yet another embodiment includes a carbon-rich refractory metal layer between the stoichiometric layer and the polycrystalline diamond layer. A metal field effect transistor including the rectifying contact may also be fabricated. A method for making the rectifying contact includes depositing a layer, or layers, of the refractory metal carbide on the polycrystalline diamond, as contrasted with a solid state reaction to form the refractory metal carbide. Another method includes depositing the polycrystalline diamond on a refractory metal carbide layer.

摘要翻译： 包括多晶金刚石层上的难熔金属碳化物层的整流接触提供高温操作，并且可以包括在诸如二极管和场效应晶体管的半导体器件中。 难熔金属碳化物层与多晶金刚石形成基本上化学上非反应性的界面。 在精馏接触的一个实施方案中提供了基本上化学计量比例的难熔金属层的单层。 另一个实施方案包括化学计量层上的第二富金属难熔金属碳化物层。 另一个实施方案包括在化学计量层和多晶金刚石层之间的富碳难熔金属层。 也可以制造包括整流接点的金属场效应晶体管。 与制造难熔金属碳化物的固态反应相反，制造精整接触的方法包括在多晶金刚石上沉积耐火金属碳化物的一层或多层。 另一种方法包括将多晶金刚石沉积在难熔金属碳化物层上。

公开(公告)号：US08723508B2

公开(公告)日：2014-05-13

申请号：US13121488

申请日：2009-09-30

申请人： Takeshi Tachibana ,  Satoru Tanaka ,  Keiko Kikuchi

发明人： Takeshi Tachibana ,  Satoru Tanaka ,  Keiko Kikuchi

IPC分类号： G01B7/14

CPC分类号： G06F17/5036 ,  G06F17/5018 ,  G06F2217/16

摘要： A method for analyzing the DC superposition characteristics of an inductance device using an electromagnetic field simulator, comprising a first step of determining an initial magnetization curve from initial magnetization to saturation magnetization, and pluralities of minor loops at different operating points, on a toroidal core made of the same magnetic material as that of the inductance device, and obtaining point-list data showing the relation between magnetic flux density or magnetic field strength and incremental permeability from the incremental permeability at each operating point; a second step of determining an operating point at a predetermined direct current on each element obtained by mesh-dividing an analysis model of the inductance device by an electromagnetic field simulator based on the initial magnetization curve of the core, allocating the incremental permeability to the operating point from the point-list data, and integrating the inductance of each element obtained from the incremental permeability to determine the inductance of the entire inductance device; and a third step of repeating the second step at different direct current levels to determine the DC superposition characteristics.

摘要翻译： 一种用于分析使用电磁场模拟器的电感装置的DC叠加特性的方法，包括：确定初始磁化到饱和磁化的初始磁化曲线的第一步骤，以及在不同工作点上的环形磁芯上的多个次循环 与电感器件相同的磁性材料，从每个工作点获得表示磁通密度或磁场强度与增量磁导率之间关系的点列表数据; 通过基于所述芯的初始磁化曲线的电磁场模拟器网格划分所述电感装置的分析模型而获得的每个元件上确定在预定直流电流下的工作点的第二步骤，将所述增量磁导率分配给所述操作 从点列表数据点，并且积分从增量磁导率获得的每个元素的电感，以确定整个电感器件的电感; 以及在不同直流电平下重复第二步骤以确定DC叠加特性的第三步骤。

公开(公告)号：US08004381B2

公开(公告)日：2011-08-23

申请号：US12307433

申请日：2007-07-05

申请人： Yasuhisa Katayama ,  Tohru Umeno ,  Takeshi Tachibana

发明人： Yasuhisa Katayama ,  Tohru Umeno ,  Takeshi Tachibana

IPC分类号： H01F5/00 ,  H01F27/28 ,  H01F27/24 ,  B32B9/00 ,  C04B35/26

CPC分类号： H01F17/0013 ,  B32B18/00 ,  C04B35/265 ,  C04B2235/3208 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3274 ,  C04B2235/3277 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/72 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/704 ,  H01F3/14 ,  H01F41/046

摘要： A laminated device comprising pluralities of magnetic ferrite layers, conductor patterns each formed on each magnetic ferrite layer and connected in a lamination direction to form a coil, and a non-magnetic ceramic layer formed on at least one magnetic ferrite layer such that it overlaps the conductor patterns in a lamination direction, the non-magnetic ceramic layer comprising as main components non-magnetic ceramics having higher sintering temperatures than that of the magnetic ferrite, and further one or more of Cu, Zn and Bi in the form of an oxide.

摘要翻译： 一种层叠装置，包括多个磁性铁氧体层，各导电图案分别形成在每个磁性铁氧体层上并且沿层叠方向连接以形成线圈;以及非磁性陶瓷层，形成在至少一个磁性铁氧体层上，使得它与 所述非磁性陶瓷层包括作为主要组分的非磁性陶瓷，所述非磁性陶瓷的烧结温度高于所述磁性铁氧体，并且还包含一种或多种氧化物形式的Cu，Zn和Bi。

公开(公告)号：US5523160A

公开(公告)日：1996-06-04

申请号：US466922

申请日：1995-06-06

申请人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Takeshi Tachibana ,  Brian R. Stoner

发明人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Takeshi Tachibana ,  Brian R. Stoner

IPC分类号： C30B25/02 ,  C30B29/04 ,  H01L21/205 ,  H01L29/04 ,  H01L29/16 ,  H01L41/08

CPC分类号： H01L29/1602 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  Y10T428/24744 ,  Y10T428/30

摘要： The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.

摘要翻译： 高度取向的金刚石膜是通过化学气相沉积形成的金刚石膜，其面积的至少95％由（100）或（111）晶面组成，并且差异{DELTAα，DELTAβ，DELTAγ} 的相邻晶体之间的欧拉角{α，β，γ}同时满足（| DELTAα|

公开(公告)号：US5479875A

公开(公告)日：1996-01-02

申请号：US278315

申请日：1994-07-21

申请人： Takeshi Tachibana ,  Kimitsugu Saito ,  Kazushi Hayashi ,  Kozo Nishimura ,  Rie Nakamura

发明人： Takeshi Tachibana ,  Kimitsugu Saito ,  Kazushi Hayashi ,  Kozo Nishimura ,  Rie Nakamura

IPC分类号： C30B25/02 ,  C23C16/02 ,  C23C16/27 ,  C30B25/10 ,  C30B29/04 ,  H01L31/10 ,  C30B23/08

CPC分类号： C23C16/274 ,  C23C16/02 ,  C23C16/278 ,  C30B25/105

摘要： A method of forming a highly oriented diamond film having a reduced thickness with a high quality at a low cost. Surface of a single crystal substrate is cleaned, and is then left in a high vacuum of 10.sup.-6 Torr or less at a temperature between room temperature and 800.degree. C. for 15 min for releasing gas molecules absorbed on the surface of the substrate. The surface of the substrate is then processed using carbon-containing plasma for forming a barrier of obstructing a carbon component within the substrate. After that, an electric field is applied across the substrate and plasma for allowing a current to flow thereacross for a specified time, to form nuclei of diamond for synthesis of a diamond film. Thus, highly oriented diamond particles or films, in which crystal orientations thereof are epitaxial to the substrate, are synthesized.

摘要翻译： 以低成本高质量地形成厚度减小的高取向金刚石膜的方法。 清洁单晶基板的表面，然后在室温至800℃的温度下放置10 -6乇以下的高真空15分钟，释放吸收在基板表面上的气体分子。 然后使用含碳等离子体处理衬底的表面，以形成阻挡衬底内的碳成分的阻挡层。 之后，将电场施加在衬底和等离子体上，以允许电流在其上跨越一定时间，以形成用于合成金刚石膜的金刚石核。 因此，合成了高取向度的金刚石颗粒或其中晶体取向向衬底外延的膜。

公开(公告)号：US5436505A

公开(公告)日：1995-07-25

申请号：US189608

申请日：1994-02-01

申请人： Kazushi Hayashi ,  Takeshi Tachibana

发明人： Kazushi Hayashi ,  Takeshi Tachibana

IPC分类号： H01L21/28 ,  H01L23/482 ,  H01L29/16 ,  H01L29/43 ,  H01L29/45 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L29/1602 ,  H01L23/4827 ,  H01L29/45 ,  H01L2924/0002

摘要： Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 .ANG. and a carbide layer generated by the reaction between the Ti layer and the semiconducting diamond layer. A diffusion prevention layer composed of at least one kind material selected from a group consisting of refractory metals including W, Mo, Au, Pt and Ta, refractory alloys including Ti-W, and refractory compounds including TiC and TiN is formed on the contact Ti layer. With this construction, the diffusion and the oxidation of Ti can be prevented.

摘要翻译： 公开了形成在半导体金刚石上的耐热欧姆接触。 它具有厚度为10至70的接触Ti层和通过Ti层和半导体金刚石层之间的反应产生的碳化物层。 由选自由W，Mo，Au，Pt和Ta的难熔金属组成的组中的至少一种材料，包括Ti-W的耐火合金和包含TiC和TiN的耐火材料组成的扩散防止层形成在接触Ti 层。 利用这种结构，可以防止Ti的扩散和氧化。

公开(公告)号：US4075425A

公开(公告)日：1978-02-21

申请号：US614873

申请日：1975-09-19

申请人： Yoshihisa Kamo ,  Takeshi Tachibana ,  Masao Ichimura

发明人： Yoshihisa Kamo ,  Takeshi Tachibana ,  Masao Ichimura

IPC分类号： H04S3/00 ,  H04R5/00

CPC分类号： H04S3/006

摘要： The present invention is to increase the carrier level so as to improve the S/N ratio when the factor T.sub.93, T.sub.T or T.sub.Q is small in level. When the level is low, noises are apt to be offensive to a listener's ear, but the reproducing level may be judged by the low level of T.sub..SIGMA., T.sub.T or T.sub.Q. Accordingly, the low level of T.sub..SIGMA. or T.sub.T is detected to raise the carrier level, and to reduce an FM demodulation noise and hence to improve the total S/N ratio.

公开(公告)号：US08237529B2

公开(公告)日：2012-08-07

申请号：US12526138

申请日：2008-02-06

申请人： Satoru Tanaka ,  Takeshi Tachibana

发明人： Satoru Tanaka ,  Takeshi Tachibana

IPC分类号： H01F17/00 ,  H01F17/04 ,  H01G9/02

CPC分类号： H01F17/0013 ,  C04B35/265 ,  C04B35/6262 ,  C04B35/62645 ,  C04B2235/3208 ,  C04B2235/3263 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/724 ,  C04B2235/725 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/94 ,  H01F1/344 ,  H01F41/0246 ,  H01F41/046 ,  H01F2017/048

摘要： Low-loss ferrite comprising 100% by mass of main components comprising 47.1-49.3% by mol of Fe2O3, 20-26% by mol of ZnO, and 6-14% by mol of CuO, the balance being NiO, and 0.1-2% by mass (as SnO2) of Sn and 0.05-2% by mass (as Mn3O4) of Mn, and having an average crystal grain size of 0.5-3 μm.

摘要翻译： 包含100质量％的主成分的低损耗铁氧体包含47.1〜49.3摩尔％的Fe 2 O 3，20〜26摩尔％的ZnO和6〜14摩尔％的CuO，余量为NiO，0.1〜 （SnO 2），Mn为0.05〜2质量％（Mn 3 O 4），平均结晶粒径为0.5〜3μm。

公开(公告)号：US20100200758A1

公开(公告)日：2010-08-12

申请号：US12702478

申请日：2010-02-09

申请人： Kentaro Fukuda ,  Noriaki Kawaguchi ,  Toshihisa Suyama ,  Akira Yoshikawa ,  Takayuki Yanagida ,  Yuui Yokota ,  Yoshihiro Yokota ,  Takeshi Tachibana

发明人： Kentaro Fukuda ,  Noriaki Kawaguchi ,  Toshihisa Suyama ,  Akira Yoshikawa ,  Takayuki Yanagida ,  Yuui Yokota ,  Yoshihiro Yokota ,  Takeshi Tachibana

IPC分类号： G01T1/202 ,  G01T1/20

CPC分类号： G01T1/2018

摘要： A radiation detecting apparatus of the present invention is an apparatus comprising a scintillator for converting incident radiation into ultraviolet radiation having a wavelength of 220 nm or less, the scintillator being composed of, for example, Nd-doped LaF3 crystals; and a diamond thin film sensor for guiding the resulting ultraviolet radiation and converting it into an electrical signal, the radiation detecting apparatus being adapted to transform the incident radiation to the electrical signal.The radiation detecting apparatus can detect radiation, such as X-rays, α rays, β rays, γ rays, or neutron rays, with high sensitivity. The radiation detecting apparatus also has a fast response, is very easy to downsize, has high resistance to radiation, and can be preferably used in the medical field, the industrial field, or the security field.

摘要翻译： 本发明的放射线检测装置是包括用于将入射的辐射转换为波长为220nm以下的紫外线的闪烁体的装置，该闪烁体由例如Nd掺杂的LaF 3晶体构成; 以及金刚石薄膜传感器，用于引导所产生的紫外线辐射并将其转换成电信号，该辐射检测装置适于将入射辐射转换成电信号。 放射线检测装置可以检测X射线，α射线等的辐射。 射线，γ射线或中子射线，具有高灵敏度。 放射线检测装置也具有快速响应，非常容易小型化，具有高耐辐射性，并且可以优选用于医疗领域，工业领域或安全领域。

公开(公告)号：US07311977B2

公开(公告)日：2007-12-25

申请号：US11281607

申请日：2005-11-18

申请人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

发明人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： C30B29/04 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B25/105 ,  H01L29/045 ,  H01L29/1602 ,  Y10T428/30

摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

摘要翻译： 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。