公开(公告)号：US20080150092A1

公开(公告)日：2008-06-26

申请号：US12041601

申请日：2008-03-03

申请人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

发明人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

IPC分类号： H01L29/36

CPC分类号： H01L29/32 ,  H01L21/3225

摘要： Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.

摘要翻译： 本发明的各种实施例涉及用于处理诸如硅晶片的半导体衬底的系统，器件和方法，以便减少其中的漏电。 半导体衬底设置有多个加热处理，其产生与衬底的表面相邻的剥离区域和在剥离区域下方的芯区域。 通过氧气扩散热处理去除了裸露区域内的氧杂质。 通过附聚热处理和宏观生长热处理的组合，在芯区内产生多个宏观体微小缺陷。 这多个宏观的大块微缺陷抑制了位于衬底内的金属污染物的迁移。 为了示例的目的，描述了以三个处理的顺序加热的半导体晶片的某些实施例。 每个处理具有其中基板被加热的温度范围和处理发生的相关时间范围。

公开(公告)号：US20080135988A1

公开(公告)日：2008-06-12

申请号：US11636144

申请日：2006-12-07

申请人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

发明人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

IPC分类号： H01L29/30 ,  H01L21/322

CPC分类号： H01L29/32 ,  H01L21/3225

摘要： Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.

摘要翻译： 本发明的各种实施例涉及用于处理诸如硅晶片的半导体衬底的系统，器件和方法，以便减少其中的漏电。 半导体衬底设置有多个加热处理，其产生与衬底的表面相邻的剥离区域和在剥离区域下方的芯区域。 通过氧气扩散热处理去除了裸露区域内的氧杂质。 通过附聚热处理和宏观生长热处理的组合，在芯区内产生多个宏观体微小缺陷。 这多个宏观的大块微缺陷抑制了位于衬底内的金属污染物的迁移。 为了示例的目的，描述了以三个处理的顺序加热的半导体晶片的某些实施例。 每个处理具有其中基板被加热的温度范围和处理发生的相关时间范围。