公开(公告)号：US20080150092A1

公开(公告)日：2008-06-26

申请号：US12041601

申请日：2008-03-03

申请人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

发明人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

IPC分类号： H01L29/36

CPC分类号： H01L29/32 ,  H01L21/3225

摘要： Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.

摘要翻译： 本发明的各种实施例涉及用于处理诸如硅晶片的半导体衬底的系统，器件和方法，以便减少其中的漏电。 半导体衬底设置有多个加热处理，其产生与衬底的表面相邻的剥离区域和在剥离区域下方的芯区域。 通过氧气扩散热处理去除了裸露区域内的氧杂质。 通过附聚热处理和宏观生长热处理的组合，在芯区内产生多个宏观体微小缺陷。 这多个宏观的大块微缺陷抑制了位于衬底内的金属污染物的迁移。 为了示例的目的，描述了以三个处理的顺序加热的半导体晶片的某些实施例。 每个处理具有其中基板被加热的温度范围和处理发生的相关时间范围。

公开(公告)号：US20080135988A1

公开(公告)日：2008-06-12

申请号：US11636144

申请日：2006-12-07

申请人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

发明人： Amit Subhash Kelkar ,  Joshua Li ,  Danh John C. Nguyen ,  Vijay Ullal

IPC分类号： H01L29/30 ,  H01L21/322

CPC分类号： H01L29/32 ,  H01L21/3225

摘要： Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.

摘要翻译： 本发明的各种实施例涉及用于处理诸如硅晶片的半导体衬底的系统，器件和方法，以便减少其中的漏电。 半导体衬底设置有多个加热处理，其产生与衬底的表面相邻的剥离区域和在剥离区域下方的芯区域。 通过氧气扩散热处理去除了裸露区域内的氧杂质。 通过附聚热处理和宏观生长热处理的组合，在芯区内产生多个宏观体微小缺陷。 这多个宏观的大块微缺陷抑制了位于衬底内的金属污染物的迁移。 为了示例的目的，描述了以三个处理的顺序加热的半导体晶片的某些实施例。 每个处理具有其中基板被加热的温度范围和处理发生的相关时间范围。

公开(公告)号：US20140306978A1

公开(公告)日：2014-10-16

申请号：US13861250

申请日：2013-04-11

申请人： Qixing Du ,  Ashwin Bhat ,  Jonathan M. Kaldor ,  I Chien Peng ,  Joshua Li ,  Kang Zhang

发明人： Qixing Du ,  Ashwin Bhat ,  Jonathan M. Kaldor ,  I Chien Peng ,  Joshua Li ,  Kang Zhang

IPC分类号： G06T1/00

CPC分类号： G06T1/00 ,  G06F3/0485 ,  G06F9/44557 ,  G06F9/451 ,  G06F12/023 ,  G06F12/0253 ,  G06F12/0875

摘要： In one embodiment, a computing device receives a request for content for a content layout in a displayable region of a screen associated with the system. The device determines, based on application-tailored recycling policies, whether a recycler includes a display object that is suitable for recycling or re-use. If it does not, the device creates the display object and fills it with the content. If it does, and if the display object contains the content, the device updates elements of the display object as needed; otherwise, if the display object does not contain the content, the device fills the display object with the content and returns it. Embodiments described herein may also be performed with sub-elements of a display object, some of which may comprise nested display objects.

摘要翻译： 在一个实施例中，计算设备在与系统相关联的屏幕的可显示区域中接收针对内容布局的内容的请求。 该设备基于应用定制的再循环策略确定回收者是否包括适合于再利用或再利用的显示对象。 如果没有，设备将创建显示对象并用内容填充它。 如果是，如果显示对象包含内容，则设备根据需要更新显示对象的元素; 否则，如果显示对象不包含内容，则设备用内容填充显示对象并返回。 本文所描述的实施例也可以用显示对象的子元素来执行，其中一些子元素可以包括嵌套的显示对象。

公开(公告)号：US20140310624A1

公开(公告)日：2014-10-16

申请号：US13862960

申请日：2013-04-15

申请人： I Chien Peng ,  Joshua Li ,  Qixing Du

发明人： I Chien Peng ,  Joshua Li ,  Qixing Du

IPC分类号： G06F3/0481

CPC分类号： G06F3/0481 ,  G06F9/451 ,  G06F17/212 ,  G06F17/30899 ,  G06Q50/01

摘要： In one embodiment, a computing device receives a request for content in a first portion of a content layout in a displayable region of a screen associated with the computing device. The device may pre-inflate at least one selected element of a display object for a second portion of the content layout, and then store the element in an application-tailored recycler. Selection of the at least one selected element may be based on dimensions of the displayable region, available memory of the computing device, or application-specific rules. The device may then retrieve, in response to a request for content in the second portion of the content layout, the element from the application-tailored recycler, update other elements of the display object as needed for the second portion of the content layout, and return the display object.

摘要翻译： 在一个实施例中，计算设备在与计算设备相关联的屏幕的可显示区域中接收对内容布局的第一部分中的内容的请求。 设备可以为内容布局的第二部分预先展示显示对象的至少一个选定元素，然后将元素存储在应用定制的回收器中。 所选择的至少一个元素可以基于可显示区域的尺寸，计算设备的可用存储器或应用特定规则。 然后，设备可以响应于对内容布局的第二部分中的内容的请求，从应用定制的回收器中检索元素，根据需要为内容布局的第二部分更新显示对象的其他元素，以及 返回显示对象。