公开(公告)号：US08926888B2

公开(公告)日：2015-01-06

申请号：US13404083

申请日：2012-02-24

申请人： Carlton Grant Willson ,  Tsuyoshi Ogawa ,  Michael W. Lin ,  Daniel J. Hellebusch ,  B. Michael Jacobsson ,  William K. Bell

发明人： Carlton Grant Willson ,  Tsuyoshi Ogawa ,  Michael W. Lin ,  Daniel J. Hellebusch ,  B. Michael Jacobsson ,  William K. Bell

IPC分类号： G03F7/004 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B29C35/08

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： An imprint lithography release agent having general formula (1): where R1 represents H or CH3, n is an integer from 1 to 5, and m is an integer from 1 to 40. Fluorinated silazanes of general formula (1) can be used to form a release layer on an imprint lithography template, added to an imprint lithography resist, or both.

摘要翻译： 具有通式（1）的压印光刻剥离剂：其中R 1表示H或CH 3，n是1至5的整数，m是1至40的整数。通式（1）的氟化硅氮烷可用于 在压印光刻模板上形成释放层，添加到压印光刻抗蚀剂或两者。

公开(公告)号：US20120217676A1

公开(公告)日：2012-08-30

申请号：US13404083

申请日：2012-02-24

申请人： Carlton Grant Willson ,  Tsuyoshi Ogawa ,  Michael W. Lin ,  Daniel J. Hellebusch ,  B. Michael Jacobsson ,  William K. Bell

发明人： Carlton Grant Willson ,  Tsuyoshi Ogawa ,  Michael W. Lin ,  Daniel J. Hellebusch ,  B. Michael Jacobsson ,  William K. Bell

IPC分类号： B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： An imprint lithography release agent having general formula (1): where R1 represents H or CH3, n is an integer from 1 to 5, and m is an integer from 1 to 40. Fluorinated silazanes of general formula (1) can be used to form a release layer on an imprint lithography template, added to an imprint lithography resist, or both.

摘要翻译： 具有通式（1）的压印光刻剥离剂：其中R 1表示H或CH 3，n是1至5的整数，m是1至40的整数。通式（1）的氟化硅氮烷可用于 在压印光刻模板上形成释放层，添加到压印光刻抗蚀剂或两者。

公开(公告)号：US10177271B2

公开(公告)日：2019-01-08

申请号：US15359882

申请日：2016-11-23

申请人： A. Paul Alivisatos ,  Miquel Salmeron ,  Yingjie Zhang ,  Daniel J. Hellebusch

发明人： A. Paul Alivisatos ,  Miquel Salmeron ,  Yingjie Zhang ,  Daniel J. Hellebusch

IPC分类号： H01L31/09 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0368 ,  H01L31/113

摘要： This disclosure provides systems, methods, and apparatus related to photodetectors. In one aspect, a photodetector device comprises a substrate, a polycrystalline layer disposed on the substrate, and a first electrode and a second electrode disposed on the polycrystalline layer. The polycrystalline layer comprises nanograins with grain boundaries between the nanograins. The nanograins comprise a semiconductor material. A doping element comprising a halogen is segregated at the grain boundaries. A length of the polycrystalline layer is between and separating the first electrode and the second electrode.

公开(公告)号：US20170148938A1

公开(公告)日：2017-05-25

申请号：US15359882

申请日：2016-11-23

申请人： A. Paul Alivisatos ,  Miquel Salmeron ,  Yingjie Zhang ,  Daniel J. Hellebusch

发明人： A. Paul Alivisatos ,  Miquel Salmeron ,  Yingjie Zhang ,  Daniel J. Hellebusch

IPC分类号： H01L31/0392 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/18 ,  H01L31/113 ,  H01L31/0296 ,  H01L31/0368

CPC分类号： H01L31/1872 ,  H01L31/02963 ,  H01L31/0368 ,  H01L31/09 ,  H01L31/1136 ,  H01L31/1836 ,  H01L31/1892 ,  Y02E10/50 ,  Y02P70/521

摘要： This disclosure provides systems, methods, and apparatus related to photodetectors. In one aspect, a photodetector device comprises a substrate, a polycrystalline layer disposed on the substrate, and a first electrode and a second electrode disposed on the polycrystalline layer. The polycrystalline layer comprises nanograins with grain boundaries between the nanograins. The nanograins comprise a semiconductor material. A doping element comprising a halogen is segregated at the grain boundaries. A length of the polycrystalline layer is between and separating the first electrode and the second electrode.