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公开(公告)号：US4730213A
公开(公告)日：1988-03-08
申请号：US856008
申请日：1986-04-25
CPC分类号： H01J9/42 , G01B11/024
摘要： In measuring the dots of a color picture tube panel the panel is scanned and energy passing through the dots is detected. A large number of lines are scanned and the scan data are stored in a matrix having a row for each scan line and, columns for the dots and the spaces between the dots. Data for a preselected number of dots and spaces are stored. When scanning occurs between rows of dots, the preselected number of dots is not scanned and zeros are put into the matrix. Data processing is simplified by searching the last column of the matrix for zeros and rejecting all rows of data having a zero in that column.
摘要翻译： 在测量彩色显像管面板的点时，扫描面板并检测穿过点的能量。 扫描大量行，并且将扫描数据存储在具有每条扫描线的行的矩阵中，以及点之间的列和点之间的空格。 存储预选数量的点和空格的数据。 当扫描点之间发生点时，预先选择的点数不被扫描，零被放入矩阵中。 通过将矩阵的最后一列搜索为零并拒绝该列中具有零的所有数据行，可以简化数据处理。
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公开(公告)号：US07118995B2
公开(公告)日：2006-10-10
申请号：US10709644
申请日：2004-05-19
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译： 一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。 半导体结构的制造以单晶硅（Si）层开始。 然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。 接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长， （ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。 通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。
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公开(公告)号：US07413967B2
公开(公告)日：2008-08-19
申请号：US11468030
申请日：2006-08-29
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译： 一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。 半导体结构的制造以单晶硅（Si）层开始。 然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。 接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长， （ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。 通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。
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