公开(公告)号：US4791340A

公开(公告)日：1988-12-13

申请号：US044460

申请日：1987-03-27

Applicant: David Finney

Inventor： David Finney

IPC: H02M5/45 ,  H02P27/06 ,  B61B13/10

CPC classification number: H02P27/06 ,  H02M5/4505 ,  H02P2201/03 ,  H02P2209/01

Abstract: A self-excited induction motor variable speed drive using a known self-excitation method in which a capacitor is connected in parallel with the motor. Power is supplied by a supply convertor, a D.C. link and a motor convertor, the latter running at the motor frequency. The motor convertor includes a current bypass switching circuit comprising a capacitor bank connected to the motor terminals and to a neutral point between a pair of thyristors connected across the D.C. link.

Abstract translation: PCT No.PCT / GB86 / 00456 Sec。 371日期1987年3月27日 102（e）1987年3月27日PCT申请日1986年7月31日PCT公布。 公开号WO87 / 00992 日期1987年2月12日。一种使用已知的自激方法的自激感应电动机变速驱动器，其中电容器与电动机并联连接。 电源由电源转换器，直流电源和电机转换器供电，后者以电机频率运行。 电动机转换器包括电流旁路开关电路，其包括连接到电动机端子的电容器组和跨过直流连接器连接的一对晶闸管之间的中性点。

公开(公告)号：US06249023B1

公开(公告)日：2001-06-19

申请号：US09376146

申请日：1999-08-17

Applicant: Adrian David Finney

Inventor： Adrian David Finney

IPC: H01L2976

CPC classification number: H01L29/7811 ,  H01L27/0255 ,  H01L29/0638 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/7808 ,  H01L29/7813 ,  H01L29/866

Abstract: A gated semiconductor device comprising a substrate defining an active surface area including source regions, and a series of gates formed adjacent and insulated from the source regions. A source electrode contacts the source regions. A termination extends around the periphery of the active surface area, The termination comprises a gate electrode and a layer of conductive material electrically connected between the gate electrode and the gates. The layer of conductive material extends to the source electrode and incorporates a series of regions which are alternately N and P type so as to define a series of breakdown diode junctions distributed around the active surface area and interposed between tie gate electrode and source electrode, In normal operation gate current flows through portions of the conductive layer which do not incorporate diode junctions. In the event that the gate/source voltage exceeds a predetermined level, the diode junctions break down, shorting the gate to the source.

Abstract translation: 一种门控半导体器件，包括限定包括源极区域的有源表面区域的衬底以及与源极区域相邻并绝缘的一系列栅极。 源电极接触源区。 端接件围绕有源表面区域的周边延伸。端接包括栅电极和电连接在栅电极和栅极之间的导电材料层。 导电材料层延伸到源电极并且包括交替N和P型的一系列区域，以便限定分布在有源表面区域周围的一系列击穿二极管接头，并且插入在连接栅电极和源电极之间 正常操作栅极电流流过不包含二极管结的导电层的部分。 在栅极/源极电压超过预定电平的情况下，二极管接头断裂，将栅极短路到源极。

公开(公告)号：US4460950A

公开(公告)日：1984-07-17

申请号：US433251

申请日：1982-10-07

Applicant: David Finney

Inventor： David Finney

IPC: H02M7/17 ,  H02M7/12 ,  H02M7/48 ,  H02M7/49 ,  H02M7/155

CPC classification number: H02M7/49

Abstract: A rectifier system in which the harmonic content of the A.C. current is reduced in a particularly efficient manner. Two or more 3-phase thyristor bridges are connected in parallel to the A.C. supply, and to the DC output by way of interphase-transformers. For the positive thyristors, and for the negative thyristors separately, the conduction transitions within each bridge are staggered from one bridge to the next so that the total conduction on each phase follows a stepped characteristic approaching a sine wave and thus having a smaller harmonic content than a comparable arrangement having uniform firing angles from bridge to bridge.

Abstract translation: 一种整流系统，其中以特别有效的方式降低交流电流的谐波含量。 两个或多个三相晶闸管桥连接到交流电源并通过相间变压器连接到直流输出端。 对于正晶闸管和负晶闸管，分别地，每个桥中的导通跃迁从一个桥交错到下一个桥，使得每相上的总导通跟随接近正弦波的阶梯特性，因此具有比谐波含量更小的谐波含量 具有从桥到桥具有均匀起火角的类似装置。