摘要:
A semiconductor device (10) is formed having an SRAM array with a plurality of SRAM cells. In forming the access and latch transistors, two different gate electrode compositions are used to form the access and latch transistors. More specifically, a dielectric layer (22) is formed between two conductive layers (26 and 28) within the gate electrode (52) for the access transistors while the dielectric layer is not formed between the two conductive layers (26 and 28) for the latch transistors. This structure allows an increase in the beta ratio for the SRAM cell thereby making a more stable SRAM cell without having to use diffused resistors between the access transistors in storage nodes or by having to form a differential thickness between the gate dielectric layers for the latch transistors and the access transistors.
摘要:
A computerized business process that captures component nonconformance data elements at an inspection process level is described. The nonconformance data is gathered via network-based data capture screens and image capture workstations. The data elements include information regarding the aircraft component nonconformance, component disposition, and if necessary, the repair or non-repairable status, type of repair to be conducted, primary non-repairable defect, and digital images of the nonconforming component feature. The information is uploaded to a database integrated with a nonconformance management system. The data is available for users, suppliers, and customers to view through a secure connection to a business entity's server system. The customer logs onto the system and accesses captured data elements and images.